• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.6 s.249
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• pp.594-601
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• 2006

Optimization study has been carried out to design an energy efficient, high temperature vacuum furnace which satisfies users' design requirements. First of all, the transient temperature distribution and the uniform temperature zone results have been compared with the steady state results to validate the feasibility of using steady state solution when constructing the thermal analysis DB. In order to check the accuracy, the interpolated results using thermal analysis DB have been compared with the computational and the experimental results. In this study, total heat flux is selected as the objective function, and the geometry parameters of vacuum furnace including the thickness of insulator, the heat zone sizes and the interval between heater and insulator are the design variables. The Uniform temperature zone sizes and the wall temperature are imposed as the design constraints. With negligible computational cost a high temperature vacuum furnace which has $40\sim60%$ reduction in total heat flux is designed using thermal analysis DB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.842-850
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• 2003

The suspension insulators are subjected to harsh environments in service for a long time. The long-term reliability of tile insulators is required for both mechanical and electrical performances. This study describes some basic performance tests and accelerated aging test by cool-heat cycling methods and thermal mechanical performance test methods on alumina porcelain insulators (new and aged) used for transmission line in KOREA. There was no fail in electrical and mechanical performance tests such as a high voltage strength, a flashover voltage, and an impact strength in all samples. But in the case of accelerating aging tests which have above 9$0^{\circ}C$ temperature gradient, fracture phenomena was happened by a thermal shock in tile aged sample(sample A) with low alumina porcelain body. It was indicated that sample A was more severely aged than other samples. According to results of HRB test and microstructural analysis, it was reasoned that insulator bodies with the matrix reinforced with alumina crystalline phase have advantages over the suppression of crack advance. And cool-heat aging and mechanical thermal ageing tests shows that a temperature gradient is more effective to accelerating than a cycling number.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1207-1208
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• 2013

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.6
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• pp.409-414
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• 2017

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.2
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• pp.190-195
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• 2009

This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated a shoddy construction. We prepared two termination kites, one is built-in type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and investigated their insulation characteristics such as ac (35[kV], 1[min]) and impulse (95[kV], $1.2{\times}50[{\mu}s]$) withstand test. The influence of defects such as thickness decrease, the gap between stress-con of housing and semiconductor and heating time on insulating properties of the termination have been studied. The thickness decrease of an insulator decreases ac breakdown strength suddenly and the breakdown traces of the insulator that is damaged by knife displayed elliptic shape. The gap of between stress-con and semiconductor deteriorates dielectric strength of insulator seriously. In heat contraction type, the ac breakdown voltage became low when the heating time is short.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2008.11a
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• pp.465-470
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• 2008

This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated badness construction. We prepared two termination kites, one is built-up type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and measured their insulation characteristics such as ac (35kV, 1min) and impulse (95kV, $1.2{\times}50{\mu}s$) withstand test. The influence of defects such as thickness and the gap between stress-con of housing and semi-conductor on insulating properties of the termination have been studied. The thickness decrease of insulator decreases ac breakdown strength. Dielectric breakdown traces of insulator that is damaged by knife displayed other shape. The gap of between housing and semiconductor deteriorates dielectric strength of insulator seriously.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.4
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• pp.267-271
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• 2011

The insulating characteristics and temperature rise behaviors of porcelain suspension insulators were investigated. The testing insulators had used in the distribution systems normally and were sampled. Firstly, leakage current was measured and its impedance was calculated. The leakage current of good insulators is 0.2 mA and its impedance is 66 $M{\Omega}$. The worse insulators have lower impedance and the insulators having below 15 $M{\Omega}$ take place flashover at the high frequency voltage flashover test. Secondly, the temperature rise characteristics were analyzed depending on leakage current and its impedance. Surface temperature of insulators was measured for 30 minutes and until its saturation after voltage was applied. The temperature rise of insulators having 15 $M{\Omega}$ is about $14.5^{\circ}C$ above the ambient temperature. Lastly, the heating behaviors of 3 insulators in a string was analyzed. Any insulator in the string does not generate heat so far as it has at least one sound insulator. On the other hand, all the insulators in the string are bad if the string have any heating insulator.