Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

The Analysis of Electrothermal Conductivity Characteristics for SOI(SOS) LIGBT with latch-up

  • Kim, Je-Yoon (Department of Electrical Engineering, Korea University) ;
  • Hong, Seung-Woo (Department of Electrical Engineering, Korea University) ;
  • Park, Sang-Won (Department of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University) ;
  • Kang, Ey-Goo (Department of Electronic Engineering, Far East Univ.)
  • Published : 2004.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

Keywords

References

  1. E. G. Kang, S. H. Moon, and M. Y. Sung, 'New trench electrode IGBT having superior electrical characteristics for Power IC system', Microelec-tronics Journal.Vol. 32, No.8, p. 641, 2001 https://doi.org/10.1016/S0026-2692(01)00045-3
  2. B. J. Baliga, 'An overview of smart power tech-nology', IEEE Trans. Electron Dev. 38, p. 1568, 1991 https://doi.org/10.1109/16.85151
  3. K. Sheng, S. J. Finney, and B. W. Williams, 'Im-proved understanding of IGBT forward conduction', Proceedings of the IPEMC, p. 48, 1997
  4. D. W. Kim, M. Y. Sun, and E. G. Kang, 'A New EST with Dual Trench Gate Electrode (DTG-EST)', J. of KIEEME(in Korean), Vol. 4, No. 2, p. 15, 2003 https://doi.org/10.4313/TEEM.2003.4.2.015
  5. E. G. Kang and M.Y. Sung, 'A novel EST with trench electrode to immunize snap-back effect and to obtain high blocking voltage', J. of KIEEME(in Korean), Vol. 2, No.3, 2001
  6. E. G. Kang, S. H. Moon, and M. Y. Sung, 'Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics', Microelectronics Journal, Vol. 32, No.9, p. 749,2001 https://doi.org/10.1016/S0026-2692(01)00055-6
  7. E. G. Kang and M. Y. Sung, 'A novel lateral trench electrode IGBT for super electrical characteristics', J. of KIEEME(in Korean), Vol. 15, No.9, p. 758, 2002
  8. W. B. Choi, 'A study on the Development of SOl Wafer Using Hydrogen Plasma Activation and Application to Fabrication of Power Semiconductor Device', PhD. Thesis, University of Korea, 2001
  9. W. B. Choi, W. J. Sung, C. I. Park, and M. Y. Sung, 'New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator', J. Korean Phys. Soc., Vol. 40, No.4, p. 645, 2002 https://doi.org/10.3938/jkps.40.645
  10. A. E. Schmitz and J. Y. Chen, 'Design, Modeling and Fabrication of Subhalf-Micrometer CMOS Transistors', IEEE Trans. Electron Devices, Vol. ED-33, No.1, p. 148, 1986