The Heat Treatment Effect of ZrO2 Buffer Layer on the Electrical Properties of Pt/SrBi2Ta2O9/ZrO2/Si Structure |
정우석
(부산대학교 무기재료공학과)
박철호 (부산대학교 무기재료공학과) 손영국 (부산대학교 무기재료공학과) |
1 |
Charge Trapping and Degradation in High-permittivity <TEX>$TiO_2$</TEX> Dielectric Films
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DOI ScienceOn |
2 |
Effect of Excess <TEX>$Bi_2O_3$</TEX> on the Ferroelectric Properties of <TEX>$SrBi_2Ta_2O_9$</TEX> Ceramics
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DOI ScienceOn |
3 |
Electrical Characteristics of Epitaxial <TEX>$CeO_2$</TEX> on Si(111)
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DOI ScienceOn |
4 |
Effect of Interfacial Layer Growth on the Electrical Characteristics of Thin Titanium Oxide Films on Silicon
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DOI |
5 |
Memory Window of <TEX>$Pt/SrBi_2Ta_2O_9/CeO_2/Si$</TEX> Structure for Metal Ferroelectric Insulator Semiconductor Field Effect Transistor
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DOI ScienceOn |
6 |
Electrical Properties of <TEX>$Pt/SrBi_2Ta_2O_9/CeO_2/Si$</TEX> Structure for Nonstructive Readout Memory
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DOI |
7 |
Process Integration of the Ferroelectric Memory FETs for NDRO FERAM
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DOI |
8 |
Dielectric Properties of <TEX>$TiO_2$</TEX>-films Reactively Souttered from Ti in an RF Magnetron
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DOI ScienceOn |
9 |
The Impact of High-K Gate Dielectrics and Metal Gate on Sub-100 nm MOSFETs
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DOI ScienceOn |
10 |
Effects of <TEX>$Y_2O_3$</TEX> Buffer Layer on Ferroelectric Properties of <TEX>$ YMnO_3$</TEX> Thin Films Fabricated on <TEX>$Pt/TiO_2/SiO_2/Si$</TEX> Substrate
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과학기술학회마을 |
11 |
Development of Low Dielectric Ferroelectric Materials for the Ferroelectric Memory Field Effect Transistor
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DOI |
12 |
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13 |
Electrical Characteristics of Metal-Insulator-Semiconductor Diodes with <TEX>$ZrO_2/SiO_2$</TEX> Dielectric Films
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DOI |
14 |
Ferroelectric Memories
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DOI ScienceOn |
15 |
Electric Properties of <TEX>$Ba_{0.5}Sr_{0.5}TiO_3$</TEX> Thin Film with Various Heat Treatment Conditions
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과학기술학회마을 |
16 |
Characteristics of Metal-Ferroelecrtric-Insulator-Semiconductor Field Effect Transistor Using a <TEX>$Pt/SrBiTa_2O_9/Y_2O_3/Si$</TEX> Structure
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DOI |
17 |
Effect of Insulator on Memory Window of Metal-Ferroelecrtric-insulator-Semiconductor Field Effect Transistor(MEFIS-FET)-Nondestructive Readout Memory Devices
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18 |
Electrical Characteristics of Pt-Bis-muth Strontium Tantalate (BST)-P-Si with Zirconium Oxide Buffer Layer
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DOI ScienceOn |
19 |
Crystalline Quality and Electrical Properties of <TEX>$PbZr_xTi_{1-x}O_3$</TEX> Thin Films Prepared on <TEX>$SrTiO_3$</TEX>-covered Si Substrates
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DOI |
20 |
Ferroelectric Fieldeffect Memory Device Using <TEX>$Bi_4Ti_3O_{12}$</TEX> Film
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DOI ScienceOn |
21 |
Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a <TEX>$CeO_2$</TEX> Buffer Layer
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DOI |
22 |
Analysis of the Dependence of Ferroelectric Properties of SBT Thin Films on the Composition and Process Temoerature
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DOI |
23 |
Effect of the Post-Annealing of Insulator on the Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
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과학기술학회마을 |