• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.43-48
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• 2005

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.195-203
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• 2020

This paper presents a parasitic inductance reduction design method for the stable driving of GaN HEMT. To reduce the parasitic inductance, we propose a vertical lattice loop structure with multiple loops that is not affected by the GaN HEMT package. The proposed vertical lattice loop structure selects the reference loop and designs the same loop as the reference loop by layering. The design reverses the current direction of adjacent current paths, increasing magnetic flux cancellation to reduce parasitic inductance. In this study, we validate the effectiveness of the parasitic inductance reduction method of the proposed vertical lattice loop structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.38-47
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• 1989

Calculated results for subband structures of electrons in GaInAs/InP hegerojunctions are presented, and their sensitivity to two parameters background impurity concentrations in the GaInAs, heterojunction barrier height-is examined. Energy levels, Fermi level and population of the ground energy level are increased with background impurity concentrations. The difference of the ground and first-excited energy levels is also increased with the increase of barrier height. However, the difference of the energy levels is almost invariable with barier height. But, population of the ground energy level decreases, but that of the first-excited energy level shows a slight increase.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.116-119
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• 2003

$Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.13-17
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• 2003

The influence of structural transition on the resistance and impedance behavior of Ni$_2$MnGa alloy was investigated. The temperature-dependent resistance and impedance were measured in a temperature range of 4 - 350 K and 185 - 300 K, respectively. The dependence of temperature coefficient of resistivity on temperature shows a kink at 220 K, which is related to the structural transition. The change in dominant scattering mechanism results in the observed kink. Significant increases were also observed around the transition temperature for both real and imaginary parts of impedance. It is thought that this phenomenon originates from disappearance of the martensite twin boundaries during the structural transformation.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.81-87
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• 2019

In this study, synthetic methods and physical properties for a new class of glycidyl azide polymer (GAP) were investigated for energetic thermoplastic elastomers (ETPE). Four kinds of GAP copolymer polyols were synthesized by introducing nucleophiles such as azide, alkoxide and alkyl amine into poly(epichlorohydrin) (PECH). The GAP copolymer synthetic reaction can be evaluated as an environmental benign and efficient synthetic method due to the simultaneous one-step reaction using two kinds of nucleophiles and the complete consumption of sodium azide. The relative stoichiometric substitution ratio analysis and the progress of reaction were checked and monitored by inverse gated decoupled $^{13}C$ NMR and Fourier transform infrared (FT-IR) spectroscopy. The glass transition temperature and molecular weight were measured by differential scanning calorimetry (DSC) and gel permeation chromatography (GPC) analysis. The synthesized poly($GA_{0.8}-butoxide_{0.2}$), poly($GA_{0.7}-n-butylamine_{0.3}$), poly($GA_{0.7}-dipropylamine_{0.3}$) and poly($GA_{0.7}-morpholine_{0.3}$) had a glass transition temperature ranged from -39 to $-26^{\circ}C$.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.63-71
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• 1990

The hydrodynamic model parameters for the submicron GaAs simulation are calculated using the Monte Carlo method. $\Gamma$, L-, and X-valleys are included in the conduction band of GaAs, and polar optic phonon, acoustic phonon, equivalent intervalley, non-equivalent intervalley, ionized impurity, and piezoelectric scattering are taken into account. The velocity-electric field strength curve obtained in this paper is in good agreement with experimental one. We present the results in tabular form so that other participants can make use of them to simulate the submicron GaAs devices by the hydrodynamic model.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.172-172
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• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.45-45
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• 2005