• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Progress in Superconductivity
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• v.14 no.1
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• pp.1-10
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• 2012

We fabricated a closed coils by using resistive-joint method and the joint resistance of the coils were estimated by field decay technique in liquid nitrogen. We used the Runge-kutta method for the numerical analysis to calculate the decay properties. The closed coil was wound by $(Bi,Pb)_2Sr_2Ca_2Cu_3O_x$/Ag tape. Both ends the tape were overlapped and soldered to each other. The current was induced in a closed coils by external magnetic flux density. Its decay characteristic was observed by means of measuring the magnetic flux density generated by induced current at the center of the closed coil with hall sensor. The joint resistance was calculated as the ratio of the inductance of the loop to the time constants. The joint resistances were evaluated as a function of critical current of loop, contact length, sweep time, and external magnetic flux density in a contact length of 7 cm. It was observed that joint resistance was dependent on contact length of a closed coil, but independent of critical current, sweep time, and external magnetic flux density. The joint resistance was measured to be higher for a standard four-probe method, compared with that for the field decay technique. This implies that noise of measurement in a standard four-probe method is larger than that of field decay technique. It was estimated that joint resistance was $8.0{\times}10^{-9}{\Omega}$ to $11.4{\times}10^{-9}{\Omega}$ for coils of contact length for 7 cm. It was found that 40Pb/60Sn solder are unsuitable for persistent mode.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

• Journal of Intelligence and Information Systems
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• v.17 no.2
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• pp.109-117
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• 2011

The exhibition industry, as technology-intensive, eco-friendly industry, contributes to regional and national development and enhancement of its image as well, if it joins cultural and tourist industry. Therefore, We need to revitalize the exhibition industry, as actively holding an exhibition event. However, to attract a number of exhibition audience, the work of enhancing audience satisfaction and awareness of value for participation should be prioritized after improving quality of service within exhibition hall. As one way to enhance the quality of service, it is thought that the way providing personalized service geared toward each audience is needed. that is, if audience avoids the complexity in exhibition space and it affords them service to enable effective time and space management, it will improve the satisfaction. All such personalized service affordable lets the audience's preference on the basis of each audience profile registered in advance online grasp. and Based on this information, it is provided with exhibition-related information suited their purpose that is the booth for the interesting audience, the shortest path to go to the booth and event via audience's smart phone. and it collects audience's reaction information, such as visiting the booth, participating the event through offered the information in this way and location information for the flow of movement, the present position so that it makes revision of existing each audience profile. After correcting the information, it extracts the individual's preference. hereunder, it provides recommend booth and event information. in other words, it provides optimal information for individual by amendment based on reaction information about recommending information built on basic profile. It provides personalized service dynamic and interactive with audience. This paper will be able to provide the most suitable information for each audience through circular and interactive structure and designed smart-phone application supportable for updating dynamic and interactive personalized service that is able to afford surrounding information in real time, as locating movement position through sensing. The proposed application collects user‘s context information and carrys information gathering function collecting the reaction about searched or provided information via sensing. and it also carrys information gathering function providing needed data for user in exhibition hall. In other words, it offers information about recommend booth of position foundation for user, location-based services of recommend booth and involves service providing detailed information for inside exhibition by using service of augmented reality, the map of whole exhibition as well. and it is also provided with SNS service that is able to keep information exchange besides intimacy. To provide this service, application is consisted of several module. first of all, it includes UNS identity module for sensing, and contain sensor information gathering module handling and collecting the perceived information through this module. Sensor information gathered like this transmits the information gathering server. and there is exhibition information interfacing with user and this module transmits to interesting information collection module through user's reaction besides interface. Interesting information collection module transmits collected information and If valid information out of the information gathering server that brings together sensing information and interesting information is sent to recommend server, the recommend server makes recommend information through inference with gathered valid information. If this server transmit by exhibition information process, exhibition information process module is provided with user by interface. Through this system it raises the dynamic, intelligent personalized service for user.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.163-170
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• 2016

In the condition of electronic controlled acceleration system, APS Sensor is the only and the most important parts to reflect the will of driver. Especially, the non-reference type APS is the critical part of this system. It can't provide the cross-reference values and it will make the vehicle goes into the 'NMC(Non-moveable condition)' or 'Limp-home mode' on the malfunction situation easier. If the situation is happened, it's very dangerous condition for the drivers, soldiers and war material systems of battlefield. The electronic control is not a necessary system for the tactical vehicles. The tactical vehicles must be prepared the manual control system independently from the electronic control system to escape, save and rescue the soldier's life and war materials. Therefore it was studied the water-penetrated broken APS output. If the output value was changed without driver's will, even the cross-reference type APS, it will effect the uncontrollable engine RPM changing or the performance down on limp-home mode. It means the manual control system of tactical vehicle is needed for any kinds of APS.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.2
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• pp.148-154
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• 2005

As the exciting point of each phase is determined by the position of rotor, the rotor's accurate position-information is needed for the Switched Reluctance Motor(SRM). When using an absolute-encoder or a resolver, to detect the location of rotor the initial starting is possible, as early sensing of rotor's location is possible. However, this is not appropriate, considering the economical efficiency, and in case of using the incremental-encoder, there's a problem at initial starting as it is not easy to track down the location of rotor at the very beginning. When using Hall-ICs, there's a fault, as it needs a special ring magnet. Considering the initial starting and economical efficiency, the optical sensor technique using a slotted-disk and an opto-interrupter is appropriate, however, this method needs three opto-interrupters and a slotted-disk when using the 6/4 pole SRM. Nevertheless, in this paper, it used only two optical sensors to operate 6/4 pole SRM and made the start up and also forward and reverse operation possible. By excluding the slotted-disc md shortening a optical sensor, it improved the convenience and economical efficiency of the production. Also, as the space for slotted-disc is no more needed, it was able to reduce the size of motor.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.