• 자원환경지질
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• 제37권4호
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• pp.375-381
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• 2004

장주기 방사성 폐기물인 악티나이드 원소들을 고정화시킬 수 있는 파이로클로어 (pyrochlore; CaCeH$f_xTi_{2-x}O_7$=0.2, 0.6, 1.0, 1.4, 1.8, 2.0)를 합성하여 상평형 관계 및 특성을 연구하였다. 혼합된 시료는 상온에서 400kg/$cm^2$의 압력으로 성형한 후, 산소분위기에서 1200∼1$600^{\circ}C$ 범위로 소결온도를 변화시키면서 소성하였다. 합성된 시료는 XRD를 사용하여 상분석을 실시하였다. 실험결과, 파이로클로어의 최적 합성조건은 산소분위기 하에서, 각각의 조성에 따라, 1300∼150$0^{\circ}C$로 매우 다양하였다. 합성시 생성된 상으로는 페롭스카이트, 파이로클로어 및 $A_{2}BO_{5}$산화물 등이 있으며, 본 계의 특성은 Hf의 함량증가에 따라 페롭스카이트 및 파이로클로어의 격자상수가 증가한다는 점이다. 이같은 현상은 육배위 자리를 차지하고 있는 Hf와 Ti의 이온반경의 차이에서 비롯된 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.12-12
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• 2010

Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on $SiO_2$/Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.

• 한국재료학회지
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• 제17권2호
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• pp.96-99
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• 2007

The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

• 한국표면공학회지
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• 제41권1호
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• 한국세라믹학회지
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• 제49권4호
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• pp.333-336
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• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.205-205
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• 2015

최근, 비정질 산화물 반도체를 이용한 TFT는 투명성, 유연성, 저비용, 저온공정이 가능하기 때문에 차세대 flat-panel 디스플레이의 back-plane TFT로써 다양한 방면에서 연구되고 있다. 산화물 반도체 In-Zn-O-시스템에서는 Gallium (Ga)을 suppressor로 사용한 a-In-Ga-Zn-O (a-IGZO) 뿐만 아니라, Magnesium (Mg), Hafnium (Hf), Tin (Sn), Zirconium (Zr) 등의 다양한 물질이 연구되었다. 그 중 Silicon (Si)은 Ga, Hf, Sn, Zr, Mg과 같은 suppressor에 비해 구하기 쉬우며 가격적인 측면에서도 저렴하다는 장점이 있다. solution 공정으로 제작한 산화물 반도체 TFT는 진공 시스템을 사용한 공정보다 공정시간이 짧고, 저비용, 대면적화가 가능하다는 장점이 있다. 하지만, 투명하고 유연한 device를 제작하기 위해서는 저온 공정과 low thermal budget은 필수적이다. 이러한 측면에서 MWI (Microwave Irradiation)는 저온공정이 가능하며, 짧은 공정 시간에도 불구하고 IZO 시스템의 산화물 반도체의 전기적 특성 향상을 기대할 수 있는 효율 적인 열처리 방법이다. 본 연구에서는 In-Zn-O 시스템의 TFT에서 silicon (Si)를 Suppressor로 사용한 a-Si-In-Zn-O (SIZO) TFT를 제작하여 두 가지 열처리 방법을 사용하여 TFT의 전기적 특성을 확인하였다. 첫 번째 방법은 Box Furnace를 사용하여 N2 분위기에서 $600^{\circ}C$의 온도로 30분간 열처리 하였으며, 두 번째는 MWI를 사용하여 1800 W 출력 (약 $100^{\circ}C$)에 2분간 열처리 하였다. MWI 열처리는 Box Furnace 열처리에 비해 저온 공정 및 짧은 시간에도 불구하고 향상된 전기적 특성을 확인 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.257-260
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• 2016

In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO₂, ε_r= 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.