• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.257-260
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• 2016

In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO₂, ε_r= 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• 한국진공학회지
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• 제21권5호
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• pp.273-278
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• 2012

현재 Hf (Hafnium)을 기반으로한 게이트 유전체의 연구는 여러 분야에서 다양하게 진행되어져 왔다. 이는 기존의 $SiO_2$보다 유전상수 값이 크고, 또한 계속되는 scaling-down 공정에서도 양자역학적인 터널링을 차단하는 특성이 뛰어나기 때문이다. MOSFET 구조에서 유전체 박막의 두께 감소로 인한 전기적 특성 저하를 보완하기 위해서 high-K 재료가 대두되었고 현재 주를 이루고 있다. 그러나 현재까지 $HfO_2$에 대한 nano-mechanical 특성 연구는 부족한 상태이므로 본 연구에서는 게이트 절연층으로 최적화하기 위하여 $HfO_2$ 박막의 nano-mechanical properties를 자세히 조사하였다. 시료는 rf magnetron sputter를 이용하여 Si (silicon) 기판 위에 Hafnium target으로 산소유량(4, 8 sccm)을 달리하여 증착하였고, 이후 furnace에서 400에서 $800^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 산소 유량을 8 sccm으로 증착한 시료가 열처리 온도가 증가할수록 누설전류 특성 성능이 우수 해졌다. Nano-indenter로 측정하고 Weibull distribution으로 정량적 계산을 한 결과, $HfO_2$ 박막의 stress는 as-deposited 시료를 기준으로 $400^{\circ}C$에서는 tensile stress로 변화되었다. 그러나 온도가 증가(600, $800^{\circ}C$)할수록 compressive stress로 변화 되었다. 특히, $400^{\circ}C$ 열처리한 시료에서 hardness 값이 (산소유량 4 sccm : 5.35 GPa, 8 sccm : 5.54 GPa) 가장 감소되었다. 반면에 $800^{\circ}C$ 열처리한 시료에서는(산소유량 4 sccm : 8.09 GPa, 8 sccm : 8.17 GPa) 크게 증가된 것을 확인하였다. 이를 통해 온도에 따른 $HfO_2$ 박막의 stress 변화를 해석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.