• 한국전자파학회논문지
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• 제28권9호
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• pp.698-706
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• 2017

디지털 제어 시스템에서 주로 사용되는 설비인 PLC(Programmable Logic Controller)와 통신선로에 대한 HPEM(High Power Electromagnetic) 펄스의 노출 위험이 최근 증가되고 있다. 본 연구에서는 서로 다른 주파수 대역을 가지는 HPEM 발생장치를 이용하여 분리된 독립 객체로써 전자 장치의 HPEM에 대한 취약성을 평가하였다. 전자장치가 어떠한 영향을 받는지 상황별로 나누어 비교하였고, HPEM에 노출된 피 시험 기기의 취약성을 분석하였다. 피 시험 기기는 특정 이상의 HPEM에 노출되면, 제어 장치의 전압 및 통신 파형에 왜곡된 특성을 보였으며, UTP(Unshielded Twisted Pair) 케이블에 연결된 장치는 유도전압에 의해 작동 불량을 나타났다. 그러나 FTP(Foiled Twisted Pair) 케이블에 연결된 장치인 경우에는 HPEM 노출로부터 효율적으로 보호되었다. 따라서 현재 전력설비 및 산업현장에서 이용되고 있는 디지털 제어시스템에 대한 HPEM 노출 취약성과 보호대책의 필요성을 입증하였다.

• Journal of Electrical Engineering and Technology
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• 제7권3호
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• pp.406-410
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• 2012

This paper looks into the field inside the wide rectangular box structure that is excited by the High Power Electromagnetic(HPEM) source as a potential threat to electric grid and communication networks causing malfunction or destruction. The rectangular box is assumed power/ground planes and its internal field is calculated by the cavity model with the lightning strike excitation as an HPEM pulse. The accuracy of the calculation method employed here is validated through a $156mm{\times}106mm{\times}508{\mu}m$ parallel metallic plate case which is manufactured and tested, and is applied to the size of a building. With the help of the cavity model that takes into account loading, the level of the electric field is shown to decrease when a metal pillar is loaded between the power and ground planes.

• 자원환경지질
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• 제36권3호
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• pp.159-170
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• 2003

전주시 하천 퇴적물시료, 호남고속도로 주변의 토양과 퇴적물 시료, 광산주변 광미 및 토양시료를 대상으로 토양오염 공정시험방법상의 용출법, 0.1N 유지용출법, Tessir et al.(1979)의 연속추출방법을 적용하여 중금속을 추출하고 그 결과를 비교하였다. 공정시험방법상의 용출법 사용시 산에 대한 완충능력이 있는 시료는 용출액의 pH 1(0.1N HCl)이 유지되지 못했고 용출액의 pH가 최고 8.0까지 증가하였다. 또한, 토양오염 공정시험방법상의 용출법 사용시 중금속 추출량(HPE)/0.1 N 유지용출법 사용시 중금속 추출량(HPEM) 값의 평균치와 범위는 Cd의 경우 0.479와 0.145~0.929, Zn의 경우 0.534와 0.078~0.928, Mn의 경우 0.432와 0.041~0.992, Cu의 경우 0,359와 0.011~0.874, Cr의 경우 0.150과 0.018~0.530, Pb의 경우 0.219와 0.003~0.853, 그리고 Fe의 경우 0.088과 1.73${\times}$$10^{-5}$~0.303이다. 이는 두 전처리 방법에 의해 추출된 중금속량의 차이가 Fe>Cr>Pb>Cu〉Mn>Cd>Zn 순임을 지시한다. HPE, HPEM과 연속추출법 비교시 Zn, Cd, Mn의 경우 추출량은 대체적으로 연속추출 3단계까지의 합$\geq$0.1N 유지용출법>연속추출 2단계까지의 합$\geq$용출법 순이었으며, Cr과 Fe의 경우 연속추출 3단계까지 합》0.1N 유지용출법>용출법 순이었으며 연속추출 2단계 까지 합은 Cr의 경우 0.1N 유지용출법의 추출량보다 낮았고 용출법의 추출량보다 높았다. Cu의 경우 연속추출 4단계까지의 합$\geq$0.1N 유지용출법>3단계까지의 합 용출법으로 나타났다. 0.1N유지위해 첨가된 염산의 양이 증가할수록, 즉 시료내의 산에 대한 완충능력이 증가할수록 HPE/HPEM 값이 감소하며, 완충능력이 큰 시료의 경우 모든 원소에서 HPE/HPEM이 0.2보다 낮다. 완충능력이 낮은 시료의 경우 Zn, Cd, Mn, Cu는 연속추출 1,2단계의 합과 연속추출 3단계의 중금속 추출함량간의 차이가 적고, 다른 원소에 비해서 상대적인 유동도가 높기 때문에 HPE/HPEM이 대채적으로 0.2보다 높으며 0.6이상의 값을 갖는 시료가 많다. 그러나, Fe, Cr의 경우는 상대적으로 Zn, Cd, Mn, Cu에 비해 유동도가 낮고, 연속추출 3단계의 함량이 1+2단계의 함량과 차이가 커 완충능력이 낮은 시료의 HPE/HPEM값도 전반적으로 0.2보다 낮다. 이러한 연구결과는 국내 토양오염 공정시험방법상의 전처리 방법인 용출법이 장래에 장기적으로 산성비와 같은 환경피해에 노출되어 토양의 완충능력이 감소하거나 상실될 수 있는 지역의 오염평가에 적합치 않을 가능성을 제시한다.

• 전기학회논문지
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• 제61권12호
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• pp.1892-1897
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• 2012

Modern electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This study has examined susceptibility of electronic circuits inside the cavity by HPEM(High Power Electromagnetics). The UWB measurements were done at an anechoic chamber using a RADAN voltage source, which can generate a transient impulse of about 200 kV. The HPEM wave penetrated inside the metal case appeared to the long damped ringwave of pulse length compared with the incident wave. In addition, the resonant frequency generated inside the metal case occurred primarily in the range of 1~3 GHz. The frequency band of 1~3 GHz was influenced on the electronic circuit, which was confirmed by an external antenna and an internal absorber. The electronic circuit was influenced by HPEM infiltrated into the cavity at the 86 kV/m out of the metal cases. Also in case of an absorber the susceptibility of an electronic circuit was smallest among other cases(aperture, antenna). It is considered that absorber has a function absorbing electromagnetic wave infiltrated into the cavity and simultaneously limiting resonance by varying a boundary condition inside the cavity. Based on the results, electronic equipment systems could be applied to protection that has suited system requirements.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.360-364
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• 2015

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

• 전기학회논문지
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• 제59권2호
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• pp.369-373
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• 2010

Modem electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 kV. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Ma1function Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.

• 한국전자파학회지:전자파기술
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• 제28권3호
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• pp.43-49
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• 2017

• 한국군사과학기술학회지
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• 제11권6호
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• pp.148-155
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• 2008

We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

• Bulletin of the Korean Chemical Society
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• 제27권8호
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• pp.1159-1163
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• 2006

Aluminum nanotube has been fabricated by a physical vapor deposition/atmospheric pressure injection using an anodic porous alumina film as a template. The pore external-, and inside diameters and the length of the aluminum nanotubes fabricated by this method are 60 nm, 35 nm and 2 $\mu$m, respectively. The structure of the fabricated aluminum nanotubes was examined by a kind of chemical treatment as extraction of copper on the cross-sectional area of these aluminum tubes in a mixed solution of $CuCl_2$ and HCl by difference of ionization tendency between aluminum and copper. The composition of the aluminum nanotube was identified by the two dimensional Hybrid Plasma Equipment Model (HPEM) employing the inductively coupled plasma.

• 전기학회논문지
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• 제57권12호
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• pp.2263-2268
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• 2008

We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.