• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.9
• /
• pp.698-706
• /
• 2017

The risk of high power electromagnetic(HPEM) pulse exposure to the devices used in digital control system such as PLC(programmable logic controller) and communication cable is increasing. In this paper, two different frequency ranges HPEMs were exposed to those control systems to assess the each vulnerability. The vulnerability of the EUTs exposed from HPEM were analyzed and compared with a variation of distances and source power. As the EUTs were exposed to higher level of HPEM, the voltage and communication waveform of the control system had shown a distorted response. And the unshielded twisted pair(UTP) cable connected to the EUTs showed operation failures with induced voltage. However, the foiled twisted pair(FTP) cable shielded the connected device efficiently from the HPEM exposure. Therefore, the necessity of the protection measures against the vulnerability of HPEM exposure for the digital control system used in power facilities and industrial site were verified.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.3
• /
• pp.406-410
• /
• 2012

This paper looks into the field inside the wide rectangular box structure that is excited by the High Power Electromagnetic(HPEM) source as a potential threat to electric grid and communication networks causing malfunction or destruction. The rectangular box is assumed power/ground planes and its internal field is calculated by the cavity model with the lightning strike excitation as an HPEM pulse. The accuracy of the calculation method employed here is validated through a $156mm{\times}106mm{\times}508{\mu}m$ parallel metallic plate case which is manufactured and tested, and is applied to the size of a building. With the help of the cavity model that takes into account loading, the level of the electric field is shown to decrease when a metal pillar is loaded between the power and ground planes.

• Economic and Environmental Geology
• /
• v.36 no.3
• /
• pp.159-170
• /
• 2003

Heavy metals are extracted from Chonju stream sediment, roadside soils and sediments along Honam expressway, soils and tailings from mining area using three different methods (partial extraction in Standard Method, partial extraction method with maintaining 0.1 N of extraction solution and Sequential Extraction Method). In samples having buffer capacity against acid, pH 1 (0.1 N HCl) of extraction solution can not be maintained and pH of extraction solution increases up to 8.0 when partial extraction in Standard Method is used. The averages and ranges of HPE(heavy metals extracted using partial extraction in Standard Method)/HPEM(heavy metals extracted using partial extraction method with maintaining 0.1 N of extraction solution) values are 0.479 and 0.145~0.929 for Cd, 0.534 and 0.078~0.928 for Zn, 0.432 and 0.041~0.992 for Mn, 0.359 and 0.011~0.874 for Cu, 0.150 and 0.018~0.530 for Cr, 0.219 and 0.003~0.853 for Pb, and 0.088 and 1.73${\times}$10$^{-5}$~0.303 for Fe. These data indicate that the difference between HPE and HPEM is large in the order of Fe, Cr, Pb, Cu, Mn, Cd and Zn. The amounts of heavy metals extracted decreases in the follow order; Sum III(sum of fraction I, II, III in sequential extraction)>HPEM>Sum III (sum of fraction I and II)>HPE for Zn, Cd and Mn and Sum III>HPEM>HPE for Cr and Fe. In the case Cr, Sum II is lower than HPEM and higher than HPE. In case of Cu, extracted heavy metals is large in the order Sum IV>HPEM>Sum III HPE. HPE/HPEM value decreases with increasing the amount of HCl used for maintaining 0.1 N of extraction solution. For samples with high buffer capacity, HPE/HPEM value in all elements is lower than 0.2. On the other hand, for samples with low buffer capacity, HPE/HPEM value are over 0.2 and many samples have values higher than 0.6 for Zn, Cd Mn and Cu due to the small difference between Sum II and Sum III, and relatively higher mobility. However, for Fe and Cr, HPE/HPEM value is below 0.2 even for samples with low buffer capacity due to their low mobility and big difference between Sum II and Sum III. This study indicates that the partial extraction method in Korean Standard Method of soil is not suitable for an assessment of soil contamination in area where buffer capacity of soil can be decreased or lost because of a long term exposure to environmental damage such as acidic rain.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.12
• /
• pp.1892-1897
• /
• 2012

Modern electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This study has examined susceptibility of electronic circuits inside the cavity by HPEM(High Power Electromagnetics). The UWB measurements were done at an anechoic chamber using a RADAN voltage source, which can generate a transient impulse of about 200 kV. The HPEM wave penetrated inside the metal case appeared to the long damped ringwave of pulse length compared with the incident wave. In addition, the resonant frequency generated inside the metal case occurred primarily in the range of 1~3 GHz. The frequency band of 1~3 GHz was influenced on the electronic circuit, which was confirmed by an external antenna and an internal absorber. The electronic circuit was influenced by HPEM infiltrated into the cavity at the 86 kV/m out of the metal cases. Also in case of an absorber the susceptibility of an electronic circuit was smallest among other cases(aperture, antenna). It is considered that absorber has a function absorbing electromagnetic wave infiltrated into the cavity and simultaneously limiting resonance by varying a boundary condition inside the cavity. Based on the results, electronic equipment systems could be applied to protection that has suited system requirements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.360-364
• /
• 2015

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.2
• /
• pp.369-373
• /
• 2010

Modem electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 kV. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Ma1function Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.3
• /
• pp.43-49
• /
• 2017

• Journal of the Korea Institute of Military Science and Technology
• /
• v.11 no.6
• /
• pp.148-155
• /
• 2008

We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

• Bulletin of the Korean Chemical Society
• /
• v.27 no.8
• /
• pp.1159-1163
• /
• 2006

Aluminum nanotube has been fabricated by a physical vapor deposition/atmospheric pressure injection using an anodic porous alumina film as a template. The pore external-, and inside diameters and the length of the aluminum nanotubes fabricated by this method are 60 nm, 35 nm and 2 $\mu$m, respectively. The structure of the fabricated aluminum nanotubes was examined by a kind of chemical treatment as extraction of copper on the cross-sectional area of these aluminum tubes in a mixed solution of $CuCl_2$ and HCl by difference of ionization tendency between aluminum and copper. The composition of the aluminum nanotube was identified by the two dimensional Hybrid Plasma Equipment Model (HPEM) employing the inductively coupled plasma.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.12
• /
• pp.2263-2268
• /
• 2008

We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.