• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.05a
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• pp.1-11
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• 1999

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1996.06a
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• pp.230-233
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• 1996

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.6
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• pp.833-842
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• 1998

In this paper, a K-band oscillator which is composed of a hair-pin resonator, a GaAs MESFET, and a frequency doubler, is suggested, implemented by HMIC(Hybrid Microwave Integrated Circuits) form, and characterized for its microwave performance. A $\lambda_g$/4 open stub is used in frequency doubler to suppress the fundamental frequency of 9 GHz which is the output of the hair-pin resonator oscillator and output matching network is optimized for its second harmonic freuency of 18 HGz. For the oscillator, the output power of -0.83 dBm, the fundamental frequency suppression of -23 dBc, and phase noise of -86 dBc/Hz at 18.20 GHz are obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.380-388
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• 2011

In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.271-277
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• 2002

In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.811-820
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• 2006

Ultra wideband CPW batons are proposed in this paper. The proposed talons are consisted of ultra wideband multi-stage Wilkinson dividers and 'X'-shaped $180^{\circ}$ out-of-phase generator. Bottom-bridges and via-holes are used to connect CPW ground lines instead of the conventional air-bridges which require troublesome manual working in fabrication with HMIC(Hybrid Microwave Integrated Circuits) substrates. The proposed CPW batons have ultra wideband of 3 or $10(=F_{figh}/F_{low})$ theoretically, the wideband characteristics and S-parameters of the basis Wilkinson divider are directly converted to those of the proposed batons. The proposed batons are so compact and small compared to the conventional Wilkinson batons because no additional area for out-of-phase section is required. So the size of the proposed batons is exactly the same as that of the basis Wilkinson dividers. As examples, 3-stage and 7-stage wideband Wilkinson dividers are converted to the proposed batons. Their measured operating bandwidth are $1\sim3GHz$ and $0.8\sim5GHz$, respectively, with excellent matching, isolation and power division performances. The measured magnitude and phase balance errors are ${\pm}0.5dB\;and\;0.45\;dB,\;and\;{\pm}5^{\circ}\;and\;{\pm}10^{\circ}C$ over $1\sim3GHz\;and\;0.8\sim5GHz$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.613-623
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• 2012

In this paper, we present an ultra miniaturized voltage tuned oscillator, with HMIC-type amplifier and phase shifter, using LTCC artificial dielectric resonator. ADR which consists of periodic conductor patterns and stacked layers has a smaller size than a dielectric resonator. The design specification of ADR is obtained from the design goal of oscillator. The structure of the ADR with a stacked circular disk type is chosen. The resonance characteristic, physical dimension and stack number are analyzed. For miniaturization of ADRO, the ADR is internally implemented at the upper part of the LTCC substrate and the other circuits, which are amplifier and phase shifter are integrated at the bottom side respectively. The fabricated ADRO has ultra small size of $13{\times}13{\times}3mm^3$ and is a SMT type. The designed ADRO satisfies the open-loop oscillation condition at the design frequency. As a results, the oscillation frequency range is 2.025~2.108 GHz at a tuning voltage of 0~5 V. The phase noise is $-109{\pm}4$ dBc/Hz at 100 kHz offset frequency and the power is $6.8{\pm}0.2$ dBm. The power frequency tuning normalized figure of merit is -30.88 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.5
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• pp.646-654
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• 2020

This paper is to develop an electromagnetic wave-based sensor that can measure the spatial distribution of precipitation, and to a electromagnetic wave rain gauge (hereinafter, "EWRG") capable of simultaneously measuring rainfall, snowfall, and wind field, which are the core of heavy rain observation. Through this study, the LFM transmission and reception signals were theoretically analyzed. In addition, In order to develop a radar transceiver, LFM transceiver design and simulation were conducted. In this paper, we developed a K-BAND pulse-driven 6W SSPA(Solid State Power Amplifiers) transceiver using a small HMIC(Hybrid Microwave Integrated Circuit). It has more than 6W of output power and less than 5dB of receiving NF(Noise Figure) with short duty of 1% in high temperature environment of 65 degrees. The manufactured module emits LFM and Square Pulse waveform with the built-in waveform generator, and the receiver has more than 40dB of gain. The transceiver developed in this paper can be applied to the other small weather radar.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.