• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2010.04a
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• pp.189-189
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• 2010

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.823-827
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• 2000

Gas-Phase reactions of methyl and ethyl nitrites with anionic nucleophiles of SH-, F- and OH- are investigated theoretically at the MP2/6-311+G* level. The SN2 processes are all highly exothermic and proceed with a typ-icaI double-weIl reaction coordinate profile. The elimination reactions of methyl nitrite with SH- and F- are double-well energy surface processes,with stabilizedproduct complexes of NO-...H2S and NO-...HF, pro-ceeding by an E1 cb-like E2 mechanism. The $\beta-elimination$ of ethyl nitrite is an E2 type process. The $\alpha-elimi-nation$ reactions of methyl and ethyl nitrites with OH- have triple-well energy profiles of Elcb pathway with an $\alpha-carbanion$ intermediate which is stabilized bythe vicinal $nc\alpha-{\sigma}*o-N$ charge transfer interactions. CompIex-ation ofmethyl carbanion with HF seems to provide a stable intermediate within a triple-well energy profile of El cb channel in the reaction of F- with methyl nitrite.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.539-546
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• 2017

In this study, an outstanding anion exchange chemical filter was prepared for acidic gas removal. Commercial anion exchange resin was attached to polyurethane (PU) foam by using different types of pressure sensitive adhesive (PSA). The water and chemical resistance and also adhesive elongation were investigated. Also, the behavior of HCl and HF adsorption was evaluated as functions of the initial concentration and flow rate. ATE-701, AT-4000C and HCA-1000 showed 900, 1,500% and 2,400% of the elongation, respectively. It was confirmed that the desorption ratio of HCA-1000 was less than 6% and had excellent durability in water and chemical resistance tests. The adsorption occurred faster as the concentration and flow rate of HCl and HF increased. But 100% adsorption equilibrium occurred after 110 minutes, regardless of the concentration and flow rate. In addition, SEM morphology showed that the adhesive was uniformly dispersed, while the porous structure of the ion exchange resin was maintained, and the chemical filter exhibited excellent durability for the adsorption/desorption process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.344-344
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• 2010

A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.73-82
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• 1998

In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and $CH_{3}OH$ vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthdsilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced striction and residual product.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.12-14
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• 2006

YBCO coated conductors have been fabricated by the reel-to-reel processing using TFA-MOD method. In this work, the fluorine-free Y & Cu precursor solution was synthesized to shorten the calcining time by reducing the evolution of HF gas, thus the meter-long YBCO precursor films can be made within few hours by the continuous slot-die coating & calcination step using the F-free Y & Cu precursor solution. The annealing step was followed to make the YBCO films by the reel-to-reel method with the vertical gas flow system onto the moving tape. To increase the growth rate of the YBCO films by enhancing the removal of HF gas, the low total pressure was adopted in the annealing processing. And the water partial pressure and the oxygen partial pressure were varied to optimize the growth conditions of the MOD-YBCO films on the buffered metal tape. FE-SEM and XRD were used to investigate the surface morphologies and the texture of the meter-long YBCO films. The end-to-end critical current $(I_c)$ of 63A/cm-width and the critical current density $(J_c)$of $0.9MA/cm^2$ with the thickness of $0.7{\mu}m$ were obtained in the 0.42m long coated conductor.