• Title/Summary/Keyword: HF

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Comparative Studies on the Utilization of Glucose in the Mammary Gland of Crossbred Holstein Cattle Feeding on Different Types of Roughage during Different Stages of Lactation

  • Chaiyabutr, N.;Komolvanich, S.;Preuksagorn, S.;Chanpongsang, S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.13 no.3
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    • pp.334-347
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    • 2000
  • The present experiment was carried out to study the utilization of glucose in the mammary gland of crossbred Holstein cattle during feeding with different types of roughage. Sixteen first lactating crossbred Holstein cattle which comprised eight animals of two breed types, Holstein Friesian${\times}$Red Sindhi ($50{\times}50=50%$ HF) and Holstein Friesian${\times}$Red Sindhi ($87.5{\times}12.5=87.5%$ HF). They were divided into four groups of 4 animals each of the same breed. The utilization of glucose in the mammary gland was determined by measuring rates of glucose uptake and the incorporation of glucose into milk components in both groups of 50% HF and 87.5% HF animals feeding on either hay or urea treated rice straw. In early lactation, there were no significant differences of the total glucose entry rate and glucose carbon recycling among groups of crossbred animals feeding on either hay or urea treated rice straw. During lactation advance, the total glucose turnover rates and recycling of carbon glucose of crossbred HF animals feeding on urea treated rice straw were markedly higher than those of crossbred HF animals feeding on hay as roughage, whereas there were no significant changes for both groups of crossbred animals feeding on hay. The percentages and values of non-mammary glucose utilization showed an increase during lactation advance in the same group of both 50% HF and 87.5% HF animals. The percentage of glucose uptake for utilization in the synthesis of milk lactose by the mammary gland was approximately 62% for both groups of 87.5% HF and by approximately 55% for both groups of 50% HF animals feeding on either hay or urea treated rice straw. Intracellular glucose 6-phosphate metabolized via the pentose phosphate pathway accounted for the NADPH (reducing equivalent) of fatty acid synthesis in the mammary gland being higher in 87.5% HF animals during mid-lactation. A large proportion of metabolism of glucose via the Embden-Meyerhof pathway in the mammary gland was more apparent in both groups of 50% HF animals than those of 87.5 % HF animals during early and mid-lactation while it markedly increased for both groups of 87.5% HF animals during late lactation. It can be concluded that utilization of glucose in the mammary gland occurs in a different manner for 50% HF and 87.5% HF animals feeding on either hay or urea treated rice straw. The glucose utilization for biosynthetic pathways in the mammary gland of 50% HF animals is maintained in a similar pattern throughout the periods of lactation. A poorer lactation persistency in both groups of 87.5% HF animals occurs during lactation advance, which is related to a decrease in the lactose biosynthetic pathway.

Surface reaction of $HfO_2$ etched in inductively coupled $BCl_3$ plasma ($BCl_3$ 유도결합 플라즈마를 이용하여 식각된 $HfO_2$ 박막의 표면 반응 연구)

  • Kim, Dong-Pyo;Um, Doo-Seunng;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.477-477
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    • 2008
  • For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

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Structure and Elastic Properties of (Nb1-xTax)C, (Nb1-xHfx)C, Ultra-High Temperature Solid Solution Ceramics using the First Principles Calculation (제1원리계산을 이용한 (Nb1-xTax)C, (Nb1-xHfx)C 초고온 세라믹 고용체의 구조 및 탄성특성)

  • Kim, Myungjae;Kim, Jiwoo;Kim, Jiwoong;Kim, Kyung-Nam
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.682-689
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    • 2021
  • NbC, HfC, TaC, and their solid solution ceramics have been identified as the best materials for ultrahigh-temperature ceramics. However, their structural stability and elastic properties are mostly unclear. Thus, we investigated structure and elastic properties of (Nb1-xTax)C and (Nb1-xHfx)C solid solutions via ab initio calculations. Our calculated results show that the stability of (Nb1-xTax)C and (Nb1-xHfx)C increases with the increase of Hf and Ta content, and (Nb1-xHfx)C is more stable than (Nb1-xTax)C at the same content of Hf and Ta. The lattice constants decrease with increasing of Hf and Ta content. (Nb1-xTax)C and (Nb1-xHfx)C carbides are mechanically stable and brittle. Bulk modulus of (Nb1-xTax)C increases with increasing Ta content. In contrast, bulk modulus of (Nb1-xHfx)C decreases with increasing Hf content. Hardness of solid solutions shows the highest values at the (Nb0.25Ta0.75)C and (Nb0.75Hf0.25)C. In particular, (Nb0.75Hf0.25)C shows the highest hardness for the current system. The results indicate that the overall mechanical properties of (Nb1-xHfx)C solid solutions are superior to those of (Nb1-xTax)C solid solutions. Therefore, controlling the Hf and Ta element and content of the (Nb1-xTax)C and (Nb1-xHfx)C Solid solution is crucial for optimizing the material properties.

Vibration-to-Vibration Energy Transfer Between HF and DF in the Mixture (HF와 DF 혼합계내에서의 상호간 진동-진동 에너지 이동)

  • Chang Soon Lee;Yoo Hang Kim
    • Journal of the Korean Chemical Society
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    • v.28 no.1
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    • pp.26-33
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    • 1984
  • The rate constants for the following vibration-to-vibration energy exchange reactions have been calculated theoretically for the temperature range from 300 to 800K and for n = 2 to 5. HF(v=n) + DF(v=0) ${\to}$ HF(v=n-l) + DF(v=l) + ${\Delta}E$(a) DF(v=n) + HF(v=0) ${\to}$ DF(v=n-l) + HF(v=l) + ${\Delta}E$(b) In calculation the loosely-held, non-rigid dimer collision model and semiclassical method have been employed. The results show that the rate constants for the processes (a) are much greater than those for the processes (b). Also, it is found that the rate constants for the processes (a) increase with decreasing temperature and with increasing quantum number, while those for the processes (b) show the opposite tendencies. These findings are explained in terms of the sign and magnitude of the energy mismatch, ${\Delta}E$.

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Study of Properties of HfO2 thin film for Low Power Mobile Information Device (저전력 휴대용 통신단말을 위한 이온빔 처리된 HfO2 박막의 특성 연구)

  • Kim, Won Bae;Lee, Ho Young
    • Journal of Satellite, Information and Communications
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    • v.10 no.3
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    • pp.89-93
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    • 2015
  • Ion-beam irradiation(IB) on $HfO_2$ surface induced high-performance liquidcrystal(LC) driving at a 1-V threshold with vertical alignment of liquid crystals(LC). The high-k materials Atomic layer deposition was used to obtain LC orientation on ultrathin and high-quality films of $HfO_2$ layers. To analyze surface morphological transition of $HfO_2$ which can act as physical alignment effect of LC, atomic force microscopy images are employed with various IB intensities. The contact angle was measured to elucidate the mechanism of vertical alignment of LC on $HfO_2$ with IB irradiation. Contact angle measurement show the surface energy changes via IB intensity increasing.

Thermal Stability and Electrical Properties of $HfO_xN_y$ ($HfO_2$) Gate Dielectrics with TaN Gate Electrode (TaN 게이트 전극을 가진 $HfO_xN_y$ ($HfO_2$) 게이트 산화막의 열적 안정성)

  • Kim, Jeon-Ho;Choi, Kyu-Jeong;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Jin-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.54-57
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    • 2003
  • [ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

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Effects of ethanolic extract of Ulmus davidiana Root on Lipid Metabolism in High-Fat Diet Fed Mice (느릅나무 뿌리 에탄올 추출물이 고지방 식이를 섭취한 마우스의 지질대사에 미치는 영향)

  • Um, Min Young;Choi, Won Hee;Ahn, Jiyun;Ha, Tae Youl
    • The Korean Journal of Food And Nutrition
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    • v.26 no.1
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    • pp.8-14
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    • 2013
  • This study was performed to investigate the effects of ethanolic extract of Ulmus davidiana root (UE) on lipid metabolism in mice fed a high-fat diet (HF) for 7 weeks. Forty male ICR mice were randomly divided into four groups; normal diet group (N), high-fat diet group (HF), HF with 0.5% UE (HF-L) and 1% UE (HF-H) group. Body weight, body weight gain, and liver weight in the HF group was significantly higher than in the N group, while those of the HF-L and HF-H group were unchanged. UE improved HF-induced dyslipidemia by reducing serum triglyceride, total cholesterol, and the atherogenic index. There was no difference in serum HDL-cholesterol among experimental groups. However, the HDL-cholesterol/total cholesterol ratio was significantly increased in the HF-L and HF-H group. Histological analysis showed that HF-fed mice developed hepatocellular microvesicular vacuolation as a result of fat accumulation. These changes were attenuated by 1% UE supplementation. In addition, hepatic triglyceride and cholesterol levels in the HF-H group significantly reduced. Taken together, these results demonstrated that lipid levels in the blood and liver were reduced by UE, suggesting that it might be beneficial for the prevention and treatment of hyperlipidemia and fatty liver.

UHF & HF RFID Credit Card Size Tag Antenna Designs Using Silver-Ink and Jumper Structure (실버잉크와 점퍼구조를 사용한 신용카드 크기의 UHF & HF RFID 태그 안테나)

  • Nam, Sehyun;Chung, Youchung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.11
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    • pp.972-977
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    • 2016
  • This paper introduces development process and results of HF & UHF band(13.56 MHz, 920 MHz) tag antennas using a single-side printing method on a PE film. The size of tag antenna is designed in the area of $80mm{\times}50mm$, little bit smaller than a credit card. The UHF tag antenna, $76mm{\times}44mm$, is located at the outside of the card size tag antenna, and the HF tag antenna, $40 mm{\times}42 mm$, is located at the center of the UHF tag antenna. The UHF and HF tag antennas are designed with consideration of coupling effects. The single-side printing method with a jumper structure without using a via is used to make a loop antenna of HF tag antenna. The reading range of UHF tag antenna is about 6m, and the reading of HF tag antenna is about 5 cm. The designed tag antennas have long enough reading ranges for both bands. The tag is applicable to logistics and authentification.

UHF-HF Dual-Band RFID Tag Antenna Design for Boxes (박스용 UHF-HF 이중대역 RFID 태그 설계)

  • Nam, Seahyeon;Kang, Juwon;Chung, Youchung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.2
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    • pp.93-98
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    • 2018
  • This paper introduces the development of HF(NFC) and UHF band(13.56 MHz, 920 MHz) tag antennas, imbedded in a box. In dual band antennas, the HF band tag can be used to inspect the box using NFC, and the UHF band tag can be used for logistics. The dielectric constant of the box material is measured and used for simulation. The Ntag213 chip manufactured by NXP is used in HF loop antennas, since NFC is possible with Ntag213. For the UHF band, the Higgs-3 chip manufactured by Alien is used. The HF tag antenna is located at the center of the UHF tag antenna, and the location of the HF tag antenna is calculated while considering coupling effects. The designed tag can be used by both the bands for the purposes of logistics and authentication.

A Study on the Frequency Characterization of the RFID Systems in Libraries (도서관 RFID 시스템의 주파수 대역별 특성에 관한 연구)

  • Choi, Jae-Hwang;Kwak, Seung-Jin;Bae, Kyung-Jae
    • Journal of the Korean Society for information Management
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    • v.26 no.3
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    • pp.335-353
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    • 2009
  • Since libraries first used RFID systems in the late 1990's, there is growing debate about the advantages and disadvantages of HF and UHF RFID systems. This study tries to explore practical issues in HF and UHF RFID systems especially in the areas of system characteristics and advantages and disadvantages affecting technology implementation to libraries. This study investigates the current status of RFID systems in Korean libraries, and analyzes the best practices of four libraries(two libraries in HF and two libraries in UHF respectively). Also, this study describes functional characteristics of HF and UHF RFID systems, debates on frequencies in ISO/DIS 28560, and the opinions of both manufacturers which provide RFID systems to libraries and librarians who use HF and UHF RFID systems in their libraries.