• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.582-589
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• 2002

This paper presents 12.2 GHz ~ 12.7 GHz frequency band reflection type 5-bit digital phase shifter with constant insertion loss property that was fabricated with relatively low cost's InGaAs HEMT for amplifier. The unavoidable large insertion loss difference between on and off states of HEMT, when it is designed by conventional design theory based on ideal switching device, is removed by transforming the HEMT impedances at on and off states to other proper values connecting a certain length transmission line to HEMT and then applying the conventional design theory. The fabricated 5-bit digital phase shifter shows very good insertion loss properties of less than 1.5 dB insertion loss difference and -4.5 dB ~ -6 dB insertion loss in 35 phase steps at 12.2 GHz ~ 12.7 GHz. These results verify the design method presented in this paper, which is useful to design phase shifter of constant insertion loss with non-ideal switching device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.551-561
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• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.108-114
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• 2016

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.4
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• pp.282-285
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• 2019

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.1-5
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• 2011

In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.172-175
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• 2010

본 논문에서는 GaN HEMT를 이용하여 Jamming용 System에 사용될 수 있는 고효율 및 고출력 특성을 가지는 광대역 Amplifier를 제작하였다. Jamming System에서 핵심이 되는 Amplifier는 넓은 범위의 주파수에서 통상적으로 사용되는 출력 신호에 비해 보다 높은 출력의 신호를 구현하는 것이 중요하다. 본 논문에서는 GaN HEMT에 안정적인 전원 공급을 위한 음 전원 Bias 제어 회로와 Sequence 회로 및 온도에 따른 Gain 보상 회로를 구현하였으며, 500~2500MHz의 광대역에서 동작하면서 50W 이상의 출력을 낼 수 있도록 설계하였다. 출력 전력이 향상과 안정적인 동작을 위해 Main 출력 단은 60Watt 급의 GaN HEMT 소자와 광대역 Coupler를 이용하여 Balanced Structure로 설계하였다. 제작된 광대역 Amplifier는 30V 단일 전원에서 동작하도록 설계되었고, 크기는 140*90mm이다. 동작주파수 대역(500~2500MHz)에서 Small Signal Gain 63dB와 Gain Flatness ${\pm}$2dB, -10dB 이하의 Input Return Loss를 가진다. CW(Continuous Wave) Signal을 이용하여 측정하였으며, 50Watt 이상의 Saturation Power에서 최대 45%, 최소 28% 정도의 효율 특성을 보였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.97-101
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• 2011

Quad band p-HEMT SP6T switch for handset applications was developed. To achieve the low insertion loss and high isolation, trade-off between "On" state and "Off" state was considered by optimization of unit cell. Especially, in case isolation between transmit port and receive port, it was achieved by large capacitors and miniaturization of chip size was achieved by common voltage control and ground using back via process. Designed SP6T switch has size of $950um{\times}100um$ and take into consideration the gate recess error, excellent loss and isolation was confirmed in operating frequency.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.540-545
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• 2015

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.