• Title/Summary/Keyword: HBM

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Factors Influencing of Colorectal Cancer Screening Behavior (대장암 조기검진행위와 영향요인)

  • Lee, Ji Sun
    • Journal of Digital Convergence
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    • v.17 no.7
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    • pp.179-186
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    • 2019
  • This study was to investigate the factors influencing colorectal cancer(CRC) screening behavior using the health belief model(HBM). It was a descriptive cross-sectional survey. A total of 148 adults aged 50 or older participants were surveyed using structured questionnaires including general characteristics,, health beliefs, and behavioral variables. The data were analyzed by descriptive statistics, t-test, chi-square test and multiple logistic regression using SPSS/WIN 25.0 program. The significant factors influecing CRC screening behavior were perceived sensitivity, spousal experience of CRC screening and family history. Therefore, in order to improve the CRC screening rate, it is necessary to increase the perceived sensitivity through systematic education about the importance of early CRC screening. In addition, it is necessary to assess the spousal screening experience and the family history of subjects and to develop the education program using the partnership of the couple.

A study on SCR-based bidirectional ESD protection device with high holding voltage due to parallel NPN BJT (Parallel NPN BJT로 인한 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구)

  • Jung, Jang-Han;Woo, Je-Wook;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.735-740
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    • 2021
  • In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

A Study on the Optimization of the Layout for the ESD Protection Circuit in O.18um CMOS Silicide Process

  • Lim Ho Jeong;Park Jae Eun;Kim Tae Hwan;Kwack Kae Dal
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.455-459
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    • 2004
  • Electrostatic discharge(ESD) is a serious reliability concern. It causes approximately most of all field failures of integrated circuits. Inevitably, future IC technologies will shrink the dimensions of interconnects, gate oxides, and junction depths, causing ICs to be increasingly susceptible to ESD-induced damage [1][2][3]. This thesis shows the optimization of the ESD protection circuit based on the tested results of MM (Machine Model) and HBM (Human Body Model), regardless of existing Reference in fully silicided 0.18 um CMOS process. His thesis found that, by the formation of silicide in a source and drain contact, the dimensions around the contact had a less influence on the ESD robustness and the channel width had a large influence on the ESD robustness [8].

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Structure Optimization of ESD Diodes for Input Protection of CMOS RF ICs

  • Choi, Jin-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.401-410
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    • 2017
  • In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

Utilizing virtual vibration tests to optimize physical endurance tests

  • Kihm, Frederic
    • Advances in aircraft and spacecraft science
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    • v.5 no.2
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    • pp.239-249
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    • 2018
  • Physical tests are performed at various stages of the development cycle of a product, from prototype validation to product qualification. Although costly, there are growing demands for qualification tests like endurance vibration testing to be more representative of the real world. At the same time there are growing demands to assess the durability of these items based on FEA simulation. In this paper, we will explain how to set up a CAE-based test and how to correlate the results with some physical measurements. Specific assumptions will be explained and some advantages of using virtual tests will be highlighted such as the reduction of the number of prototypes needed, investigations on failures, evaluation of the level of reliability via sensitivity analysis, evaluation of the margins are at the end of a successful test. This presentation will therefore focus on explaining and showing how virtual tests can enrich the exploitation of physical tests.

A Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps

  • Jung, Jin-Woo;Koo, Yong-Seo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.339-344
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    • 2014
  • This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

Isolation, Culture and Electroporation of Rice Protoplasts (벼 원형질체의 분리, 배양 및 Electroporation에 관한 연구)

  • 황성진
    • Journal of Plant Biology
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    • v.34 no.1
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    • pp.19-23
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    • 1991
  • Culture of embryogenic callus and suspension were induced from rice seeds in MS2.5 medium. In hormone free N6 medium, whole plantlets were regenerated from embryogenic callus. We observed cell division and reformation of embryogenic callus on culture of protoplast isolated from embryogenic cell suspensions. In addition, we studied the influencing factors on viability of protoplast treated with electroporation. Viability was decreased according to the increase of voltage and capacitance during electroporation. An optimal level of viability was obtained after treatment with $200-300\;V/1180\;\mu\textrm{F}$ in HEM buffer at $4^{\circ}C$..

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On the Chaotic Vibrations of Thin Beams by a Bifurcation Mode (분기 모우드를 활용한 얇은 빔의 혼돈 역학에 관한 연구)

  • 이영섭;주재만;박철희
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 1995.04a
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    • pp.121-128
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    • 1995
  • The results are summarized as what follows: 1) The modeling of thin beams, which is a continuous system, into a two DOF system yields satisfactory results for the chaotic vibrations. 2) The concept of "natural forcing function" derived from the eigenfunction of the bifurcation mode is very useful for the natural responses of the system. 3) Among the perturbation techniques, HBM is a good estimate for the response when the geometry of motion is known. 4) It is known that there exist periodic solutions of coupled mode response for somewhat large damping and forcing amplitude, as well as weak damping and forcing. 5) The route-to-chaos related with lateral instability in thin beams is composed of period-doubling and quasiperiodic process and finally follows discontinuous period-doubling process. 6) The chaotic vibrations are verified by using Poincare maps, FFT's, time responses, trajectories in the configuration space, and the very powerful technique Lyapunov characteristics exponents.exponents.

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Stress mode proposal for an efficient ESD test (효율적인 ESD(ElectroStatic Discharge) test를 위한 Stress mode 제안)

  • Gang, Ji-Ung;Chang, Seog-Weon;Kwack, Kae-Dal
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1289-1294
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    • 2008
  • Electrostatic discharge(ESD) phenomenon is a serious reliability concern. It causes approximately most of all field failures of IC. To quality the ESD immunity of IC product, there are some test methods and standards developed. ESD events have been classified into 3 models, which are HBM, MM and CDM. All the test methods are designed to evaluate the ESD immunity of IC products. This study provides an overview among ESD test methods on ICs and an efficient ESD stress method. We have estimated on all pin combination about the positive and negative ESD stress. We make out the weakest stress mode. This mode called a worst-case mode. We proposed that positive supply voltage pin and I/O pin combination is efficient because it is a worst-case mode.

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준정적해석과 동적해석을 통한 인체 방전 에너지 해석

  • 이종호;김두현;김상렬
    • Proceedings of the Korean Institute of Industrial Safety Conference
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    • 2001.11a
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    • pp.235-241
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    • 2001
  • 정전기는 일상생활에서 흔히 일어나는 현상으로 산업 전반에 걸쳐 많은 응용을 하고 있다. 그러나 정전기 방전 현상은 절연내력을 초과할 때 갑작스럽게 방출되면서 일어나는 공기중 전자전도 현상으로 외부 환경에 민감한 전기·전자 소자의 오동작 피해를 주거나 가연성 재료를 폭발시킬 수 있는 에너지원이 될 수 있다. 또한 정전기 피해의 원인 분석이 곤란하기 때문에 정전기 방전 현상의 정확한 이해가 필요하다. 따라서 방전 위험성 평가시 초기에 대전된 인체 전하량이 모두 방전 에너지로 쓰인다는 비현실적인 가정을 사실적인 방전 모델로 하여 방전현상을 이해하고, 정량적 해석 및 분석을 통하여 위험성을 올바르게 인식하고 평가하는 것이 필요하다 이에 ESD 현상에 대한 HBM, CDM, FIM 등 여러 모델을 이용하여 방전 메카니즘을 발표하여 정전기 현상을 이해하고, 각 종 규제를 강화하거나 확대하여 재해를 방지하고 있다. 그러나 국내의 인체 정전기 방전으로 인한 위험성을 올바르게 파악할 수 있는 연구나 연구 자료 및 문헌이 미비한 실정이다.(중략)

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