• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1169-1171
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• 2003

This paper presents a 1.6[kW]class single phase high power factor(HPF) pulse width modulation(PWM) boost rectifier featuring soft commutation of the active switches at zero current. It incorporates the most desirable properties of conventional PWM and soft switching resonant techniques. The input current shaping is achieved with average current mode control and continuous inductor current mode. This new PWM converter provides zero current turn on and turn off of the active switches, and it is suitable for high power applications employing insulated gate bipolar transistors(IGBT'S). The principle of operation, the theoretical analysis, a design example, and experimental results from laboratory prototype rated at 1.6[kW] with 400[Vdc] output voltage are presented. The measured efficiency and the power factor were 96.2[%] and 0.99[%], respectively, with an input current Total Harmonic Distortion(THD) equal to 3.94[%], for an input voltage with THD equal to 3.8[%], at rated load.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.336-339
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• 2009

In this paper, such as battery power or solar energy and fuel cells generated from Renewable energy sources, high voltage to low voltage DC-DC Converter for converting the design of the study. System consists of low voltage ($24{\sim}28$ [VDC]) and Boosts the voltage (270 [VDC]) for a 3 [kW] DC-DC converter and control circuit is configured as, Power switch the ST Tomson's Automotive low voltage high current MOSFET switches STE250NS10S (temperature 250A) was applied to the two parallel. Also, Controller's processor used ATMEGA128, and Gate Drive applies and composed Photo Coupler TLP250. development. Input voltage (24V) and output voltage (270V) for Conversion in the H-bridge converter topology of the circuit output side power and voltage to control the implementation of the Phase shift angle control applied. And, 3kW of power to pass appropriate specification of the secondary side as interpreted by the high frequency transformer, and the experimental production and analysis of the experiment

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.100-104
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• 2005

The injection molding is very effective process for various plastic products due to its high productivity. It is also good fur precise products like optical parts. Various thermoplastic materials are also available with this injection molding process. In recent, however, as the overall size of the product increases and micro or nano scale of patterns are applied to the products, we now have some problems such as low fidelity of the replication of the pattern, high molding pressure, or warpage from the in-mold stress. Injection/compression molding is studied to overcome those problems in molding large thin plate with micro pattern array on its surface. An injection compression mold is designed to 3 pieces mold for side gate. We install 4 pressure transducers and 9 thermocouples to measure the melt pressure and surface temperature in the cavity during the process. As a result, the maximum molding pressure for injection compression molding is reduced to 1/3 compared to injection molding and the uniformity of the pressure in the cavity is enhanced by about 15%.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

• Journal of the Korean Society for Nondestructive Testing
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• v.9 no.1
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• pp.30-38
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• 1989

Since the nuclear power plants in Korea have been operated in 1979, the nondestructive testing (NDT) of pressure vessels and/or piping welds plays an important role for maintaining the safety and integrity of the plants. Ultrasonic method is superior to the other NDT method in the viewpoint of the detectability of small flaw and accuracy to determine the locations, sizes, orientations, and shapes. As the service time of the nuclear power plants is increased, the radiation level from the components is getting higher. In order to get more quantitative and reliable results and secure the inspector from the exposure to high radiation level, automation of the ultrasonic equipments has been one of the important research and development(R & D) subject. In this research, it was attempted to visualize the shape of flaws presented inside the specimen using a Modified C-Scan technique. In order to develope Modified C-Scan technique, an automatic ultrasonic scanner and a module to control the scanner were designed and fabricated. IBM-PC/XT was interfaced to the module to control the scanner. Analog signals from the SONIC MARK II were digitized by Analog-Digital Converter(ADC 0800) for Modified C-Scan display. A computer program has been developed and has capability of automatic data acquisition and processing from the digital data, which consist of maximum amplitudes in each gate range and locations. The data from Modified C-Scan results was compared with shape from artificial defects using the developed system. Focal length of focused transducer was measured. The automatic ultrasonic equipment developed through this study is essential for more accurate, reliable, and repeatable ultrasonic experiments. If the scanner are modified to meet to appropriate purposes, it can be applied to automation of ultrasonic examination of nuclear power plants and helpful to the research on ultrasonic characterization of the materials.