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Evaluation for Rock Cleavage Using Distribution of Microcrack Lengths and Spacings (2) (미세균열의 길이 및 간격 분포를 이용한 결의 평가(2))

  • Park, Deok-Won
    • The Journal of the Petrological Society of Korea
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    • v.27 no.1
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    • pp.1-15
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    • 2018
  • The characteristics of the rock cleavage of Jurassic Geochang granite were analysed using the distribution of microcrack lengths and spacings. The length and spacing-cumulative diagrams for the six directions of rock cleavages were arranged in increasing order ($H2{\rightarrow}R1$) on the density (${\rho}$) of microcrack length. The various parameters were extracted through the combination of above two types of diagrams. The evaluation for the six directions of rock cleavages was performed using the four groups (I~IV) of parameters such as (I) intersection angle (${\alpha}-{\beta}$), exponent difference (${\lambda}_S-{\lambda}_L$), length of line (ol and ll'), length ratio (ol/os and ll'/sl'), mean length ((ss'+ll')/2), area of right-angled triangle (${\Delta}oaa_a^{\prime}$ and ${\Delta}obb_a^{\prime}$) and area difference (${\Delta}obb^{\prime}-{\Delta}oaa^{\prime}$ and ${\Delta}obb_a^{\prime}-{\Delta}oaa_a^{\prime}$), (II) length of line (oa and os) and area (${\Delta}oaa^{\prime}$), (III) length of line (sl') and length ratio (ss'/ll') and (IV) length of line (ob, ss' and ls') and area (${\Delta}obb^{\prime}$, ${\Delta}ll^{\prime}s^{\prime}$, ${\Delta}ss^{\prime}l^{\prime}$ and ⏢ll'ss'). The results of correlation analysis between the values of parameters for three rock cleavages and those for three planes are as follows. The values of parameters for three rock cleavages are in orders of (I) H(hardway, (H1 + H2)/2) < G(grain, (G1 + G2)/2) < R(rift, (R1 + R2)/2), (II) R < G < H, (III) G < H < R and (IV) H < G < R. On the contrary, the values of parameters for three planes are in orders of (I) R' < G' < H', (II) H' < G' < R' and (III and IV) R' < H' < G'. Especially the values of parameters belonging to group I and group II show mutual reverse orders. In conclusion, this type of correlation analysis is useful for discriminating three quarrying planes.

Chiral [Iminophosphoranyl]ferrocenes: Synthesis, Coordination Chemistry, and Catalytic Application

  • Co, Thanh Thien;Shim, Sang-Chul;Cho, Chan-Sik;Kim, Dong-Uk;Kim, Tae-Jeong
    • Bulletin of the Korean Chemical Society
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    • v.26 no.9
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    • pp.1359-1365
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    • 2005
  • A series of new chiral [iminophosphoranyl]ferrocenes, {${\eta}^5-C_5H_4-(PPh_2=N-2,6-R_2-C_6H_3)$}Fe{${\eta}^5-C_5H_3-1-PPh^2-2-CH(Me)NMe_2$} (1: R = Me, $^iPr$), {${\eta}^5{-C_5H_4-(PPh_2=N-2,6-R_2}^1-C_6H_3)$}Fe{${\eta}^5-C_5H_3-1-(PPh_2=N-2,6-R_2-C_6H_3)-2-CH(Me)R_2$} (2: $R^1\;=\;Me,\;^iPr;\;R^2\;=\;NMe_2$, OMe), and $({\eta}^5-C_5H_5)Fe${${\eta}^5-C_5H_4-1-PR_2-2-CH(Me)N=PPh_3$} (3:R = Ph, $C_6H_{11}$) have been prepared from the reaction of [1,1'-diphenylphosphino-2-(N,N-dimethylamino) ethyl]ferrocene with arylazides (1 & 2) and the reaction of phosphine dichlorides ($R_3PCl_{2}$) with [1,1'-diphenylphosphino-2-aminoethyl]ferrocene (3), respectively. They form palladium complexes of the type $[Pd(C_3H_5)(L)]BF_4$ (4-6: L = 1-3), where the ligand (L) adopts an ${\eta}^2-N,N\;(2)\;or\;{\eta}^2$-P,N (3) as expected. In the case of 1, a potential terdentate, an ${\eta}^2$-P,N mode is realized with the exclusion of the –=NAr group from the coordination sphere. Complexes 4-6 were employed as catalysts for allylic alkylation of 1,3-diphenylallyl acetate leading to an almost stoichiometric product yield with modest enantiomeric excess (up to 74% ee). Rh(I)-complexes incorporating 1-3 were also prepared in situ for allylic alkylation of cinnamyl acetate as a probe for both regio- and enantioselectivities of the reaction. The reaction exhibited high regiocontrol in favor of a linear achiral isomer regardless of the ligand employed.

On the Definition of Intuitionistic Fuzzy h-ideals of Hemirings

  • Rahman, Saifur;Saikia, Helen Kumari
    • Kyungpook Mathematical Journal
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    • v.53 no.3
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    • pp.435-457
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    • 2013
  • Using the Lukasiewicz 3-valued implication operator, the notion of an (${\alpha},{\beta}$)-intuitionistic fuzzy left (right) $h$-ideal of a hemiring is introduced, where ${\alpha},{\beta}{\in}\{{\in},q,{\in}{\wedge}q,{\in}{\vee}q\}$. We define intuitionistic fuzzy left (right) $h$-ideal with thresholds ($s,t$) of a hemiring R and investigate their various properties. We characterize intuitionistic fuzzy left (right) $h$-ideal with thresholds ($s,t$) and (${\alpha},{\beta}$)-intuitionistic fuzzy left (right) $h$-ideal of a hemiring R by its level sets. We establish that an intuitionistic fuzzy set A of a hemiring R is a (${\in},{\in}$) (or (${\in},{\in}{\vee}q$) or (${\in}{\wedge}q,{\in}$)-intuitionistic fuzzy left (right) $h$-ideal of R if and only if A is an intuitionistic fuzzy left (right) $h$-ideal with thresholds (0, 1) (or (0, 0.5) or (0.5, 1)) of R respectively. It is also shown that A is a (${\in},{\in}$) (or (${\in},{\in}{\vee}q$) or (${\in}{\wedge}q,{\in}$))-intuitionistic fuzzy left (right) $h$-ideal if and only if for any $p{\in}$ (0, 1] (or $p{\in}$ (0, 0.5] or $p{\in}$ (0.5, 1] ), $A_p$ is a fuzzy left (right) $h$-ideal. Finally, we prove that an intuitionistic fuzzy set A of a hemiring R is an intuitionistic fuzzy left (right) $h$-ideal with thresholds ($s,t$) of R if and only if for any $p{\in}(s,t]$, the cut set $A_p$ is a fuzzy left (right) $h$-ideal of R.

Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

  • Shin, S.H.;Lee, S.H.;Kim, Y.S.;Heo, J.H.;Bae, D.I.;Hong, S.H.;Park, S.H.;Lee, J.W.;Lee, J.G.;Oh, J.H.;Kim, M.S.;Cho, C.H.;Chung, T.Y.;Kim, Ki-Nam
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.69-75
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    • 2003
  • Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

Some Subcategories of The Category IRe$l_{R}$(H) (범주 IRe $l_{R}$(H)의 부분범주)

  • K. Hur;H. W. Kang;J. H. Ryou;H. K. Song
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.05a
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    • pp.29-32
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    • 2003
  • We introduce the subcategories IRe $l_{PR}$ (H), IRe $l_{PO}$ (H) and IRe $l_{E}$(H) of IRe $l_{R}$(H) and study their structures in a viewpoint of the topological universe introduced by L.D.Nel. In particular, the category IRe $l_{R}$(H)(resp. IRe $l_{P}$(H) and IRe $l_{E}$(H)) is a topological universe eve, Set. Moreover, we show that IRe $l_{E}$(H) has exponential objects.ial objects.

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Hydrodynamic Characteristics in a Hexagonal Inverse Fluidized Bed (장방형 역유동층의 동력학적 특성)

  • 박영식;안갑환
    • Journal of Environmental Science International
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    • v.5 no.1
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    • pp.93-102
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    • 1996
  • Hydrodynamic characteristics such as gas holdup, liquid circulation velocity and bed expansion in a hexagonal inverse fluidized bed were investigated using air-water system by changing the ratio ($A_d$/$A_r$) of cross-sectional area between the riser and the downcomer, the liquid level($H_1$/H), and the superficial gas velocity($U_g$). The gas holdup and the liquid circulation velocity were steadily increased with the superficial gas velocity increasing, but at high superficial gas velocity, some of gas bubbles were carried over to a downcomer and circulated through the column. When the superficial gas velocity was high, the $A_d$/$A_r$ ratio in the range of 1 to 2.4 did not affect the liquid circulation velocity, but the maximum bed expansion was obtained at $A_d$/$A_r$ ratio of 1.25. The liquid circulation velocity was expressed as a model equation below with variables of the cross-sectional area ratio($A_d$/$A_r$) between riser to downcomer, the liquid level($H_1$/H), the superficial gas velocity($U_g$), the sparser height[(H-$H_s$)/H], and the draft Plate level($H_b$/H). $U_{ld}$ = 11.62U_g^{0.75}$${(\frac{H_1}{H})}^{10.30}$${(\frac{A_d}{A_r})}^{-0.52}$${(\frac({H-H_s}{H})}^{0.91}$${(\frac{H_b}{H})}^{0.13}$

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Transcriptional Regulation of Human GD3 Synthase (hST8Sia I) by Fenretinide in Human Neuroblastoma SH-SY-5Y Cells (사람 신경모세포종 세포주 SH-SY5Y에서 fenretinide에 의한 GD3합성효소(hST8Sia I)의 전사조절기작)

  • Kang, Nam-Young;Kwon, Haw-Young;Lee, Young-Choon
    • Journal of Life Science
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    • v.20 no.9
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    • pp.1332-1338
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    • 2010
  • To elucidate the mechanism underlying the regulation of hST8Sia I gene expression in FenR-induced SH-SY5Y cells, we characterized the promoter region of the hST8Sia I gene. Functional analysis of the 5'-flanking region of the hST8Sia I gene showed that the -1146 to -646 region functions as the FenR-inducible promoter of hST8Sia I in SH-SY5Y cells. Site-directed mutagenesis indicated that the NF-&B binding site at -731 to -722 was crucial for the FenR-induced expression of hST8Sia I in SH-SY5Y cells. To investigate which signal transduction pathway was involved in FenR-stimulated induction of hST8Sia I in SH-SY5Y cells, we performed Western blot analysis using phospho-specific antibodies in order to measure their degree of regulatory phosphorylation. Phosphorylations of AKT and RelA (p65) subunit of NF-${\kappa}B$ were significantly elevated in cytosolic and nuclear fractions of FenR-stimulated SH-SY5Y cells, respectively, than in control or DMSO-treated SH-SY5Y cells. These results suggest that FenR induce transcriptional up-regulation of hST8Sia I gene expression through translocation of RelA (p65) subunit of NF-${\kappa}B$ to nucleus by AKT signal pathway in SH-SY5Y cells.

Asn124 of Cel5A from Hypocrea jecorina not only provides the N-glycosylation site but is also essential in maintaining enzymatic activity

  • Qin, Yuqi;Qu, Yinbo
    • BMB Reports
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    • v.47 no.5
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    • pp.256-261
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    • 2014
  • To investigate the function of N-glycosylation of Cel5A (endoglucanase II) from Hypocrea jecorina, two N-glycosylation site deletion Cel5A mutants (rN124D and rN124H) were expressed in Saccharomyces cerevisiae. The weights of these recombinant mutants were 54 kDa, which were lower than that of rCel5A. This result was expected to be attributed to deglycosylation. The enzyme activity of rN124H was greatly reduced to 60.6% compared with rCel5A, whereas rN124D showed slightly lower activity (10%) than that of rCel5A. rN124D and rN124H showed different thermal stabilities compared with the glycosylated rCel5A, especially at lower pH value. Thermal stabilities were reduced and improved for rN124D and rN124H, respectively. Circular dichroism spectroscopy showed that the modification of secondary structure by mutation may be the reason for the change in enzymatic activity and thermal stability.

Intuitionistic H-Fuzzy Reflexive Relations (직관적 H-퍼지 반사관계)

  • K. Hur;H. W. Kang;J. H. Ryou;H. K. Song
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.05a
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    • pp.33-36
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    • 2003
  • We introduce the subcategory IRel$\_$R/ (H) of IRel (H) consisting of intuitionistic H-fuzzy reflexive relational spaces on sets and we study structures of IRel$\_$R/ (H) in a viewpoint of the topological universe introduce by L.D.Nel. We show that IRel$\_$R/ (H) is a topological universe over Set. Moreover, we show that exponential objects in IRel$\_$R/ (H) are quite different from those in IRel (H) constructed in [7].

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Stress Analysis of IPS Lower bracket

  • Lee, J.M.;Park, K.N.;Chi, D.Y.;Park, S.K.;Sim, B.S.;Lee, H.H.;Ahn, S.H.;Lee, C.Y.;Kim, H.R.
    • Proceedings of the Korean Nuclear Society Conference
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    • 2005.10a
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    • pp.703-704
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    • 2005
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