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COMMON FIXED POINTS FOR COMPATIBLE MAPPINGS OF TYPE(A) IN 2-METRIC SPACES

  • WANG, WEN-ZUO
    • Honam Mathematical Journal
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    • v.22 no.1
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    • pp.91-97
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    • 2000
  • In this paper we obtain a criterion for the existence of a common fixed point of a pair of mappings in 2-metric spaces. Our result generalizes a number of fixed point theorems given by Imdad, Khan and Khan [1], Kahn and Fisher [2], Kubiak [3], Rhoades [5], and Singh, Tiwari and Gupta [6].

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CYTOGENETIC EFFECTS OF ORGANOPHOSPHATE PESTICIDES ON GOAT LYMPHOCYTES IN CULTURE

  • Gupta, S.C.;Sahal, R.;Gupta, N.
    • Asian-Australasian Journal of Animal Sciences
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    • v.9 no.4
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    • pp.449-454
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    • 1996
  • Cytogenetic effects of malathion and parathion, the organophosphorus pesticides were studied on goat lymphocytes in culture. The mitotic indices (% of blast cells + cells at metaphase) of goat lymphocytes showed corresponding decrease with the increase in dose of pesticides. Malathion had significant effect only at $150{\mu}g/ml$ or higher dosages while, parathion caused antimitotic effects even at the lowest dose ($5{\mu}g/ml$) tested. The clastogenic effects of malathion were significant ($p{\leq}0.05$) at $100{\mu}g/ml$. In higher doses, the effects were highly significant ($p{\leq}0.01$). The frequency of metaphase plates with chromosomal abnormalities were highest (22.0%) at $200{\mu}g/ml$. The incidences of chromosomal abnormalities were significant ($p{\leq}0.05$) in parathion treated series even at $5{\mu}g/ml$ dose level. At $10{\mu}g/ml$ or higher dose levels the difference between treatment groups and controls were more pronounced ($p{\leq}0.01$). Various types of chromosomal abnormalities were encountered in goat lymphocytes treated by malathion and parathion. However, the incidence of gaps, breaks, acentric fragments, dicentric chromosomes were higher than other types of structural and numerical abnormalities.

Linearity-Distortion Analysis of GME-TRC MOSFET for High Performance and Wireless Applications

  • Malik, Priyanka;Gupta, R.S.;Chaujar, Rishu;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.3
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    • pp.169-181
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    • 2011
  • In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: $g_{m1}$, $g_{m2}$, $g_{m3}$, and figure-of-merit (FOM) metrics; $V_{IP2}$, $V_{IP3}$, IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth ($X_j$) or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.