• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.53-66
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• 1992

Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.

• Korean Journal of Mathematics
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• v.18 no.3
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• pp.323-334
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• 2010

We give a theorem for the existence of at least three solutions for the fourth order elliptic boundary value problem with the square growth variable coefficient nonlinear term. We use the variational reduction method and the critical point theory for the associated functional on the finite dimensional subspace to prove our main result. We investigate the shape of the graph of the associated functional on the finite dimensional subspace, (P.S.) condition and the behavior of the associated functional in the neighborhood of the origin on the finite dimensional reduction subspace.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.2
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• pp.473-480
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• 1996

Automatic fatigue crack length measuring system using DC electrical potential method and the system control program for automatic fatigue testing under random load condition were made in this study. And using these system and control program, fatigue tests were executed under constant and random load condition. As the result, the propagation of crack in random loading can be represented Paris equaiton and log normal probability function. But constant and random load test show different crack propagation properties.

• Korean Journal of Mathematics
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• v.16 no.1
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• pp.41-49
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• 2008

We show the existence of a negative solution for the system of the following nonlinear wave equations with critical growth, under Dirichlet boundary condition and periodic condition $$u_{tt}-u_{xx}=au+b{\upsilon}+\frac{2{\alpha}}{{\alpha}+{\beta}}u_+^{\alpha-1}{\upsilon}_+^{\beta}+s{\phi}_{00}+f,\\{\upsilon}_{tt}-{\upsilon}_{xx}=cu+d{\upsilon}+\frac{2{\alpha}}{{\alpha}+{\beta}}u_+^{\alpha}{\upsilon}_+^{{\beta}-1}+t{\phi}_{00}+g,$$ where ${\alpha},{\beta}>1$ are real constants, $u_+={\max}\{u,0\},\;s,\;t{\in}R,\;{\phi}_{00}$ is the eigenfunction corresponding to the positive eigenvalue ${\lambda}_{00}$ of the wave operator and f, g are ${\pi}$-periodic, even in x and t and bounded functions.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.188-194
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• 1997

The effects of solidification condition and vibration on structure refinement were investigated for unidirectionally solidified $Al-CuAl_2$ eutectic composites. Eutectic composites were unidirectionally solidified under vibration with different growth rates (R) and thermal gradient(G). The lamellar structure was varied according to growth condition (G/R ratio). For the structure refinement the effect of G/R was found out to be greater than that of vibration. The interlamellar spacing(${\lambda}$) in this materials was varied with the growth rates(R) with "${\lambda}^2R$=Constant" relationship.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.972-978
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• 2001

Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.161-167
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• 1988

Yttria-Stabilized Cubic Zirconia Crystals with Various Y2O3 amounts (6-15mol%) were grown by the Skull melting technique. The modeling of the nucleation at the Skull bottom and the best growth condition were studied. The abrupt changes in generator heating Power and lowering rate of crucible caused the dendritic growth in the grown crystal. The optimum condition of cubic Zirconia single crystals was obtained when the lowering rate was gradually increased. The effect of Y2O3 amounts on the perfection adn the color of the grown crystal were determined. The darkish color generated in the crystals added Y2O3 amounts over 12mol% was eliminated by the annealing in air at 1200$^{\circ}C$ for 24hrs.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.6
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• pp.105-110
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• 2002

ZnTe epilayers have been successfully grown on (100) CaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC). It was found that Zn partial pressure from h reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8${\mu}m$ were grown for studying the effect of the thickness on crystalline quality. The FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6${\mu}{\textrm}{m}$. The best value of the FWHM of the few crystal rocking curve, 66 arcsec, was obtained on the film with $12{\mu}m$ in thickness. Until now, this result shows the best quality of ZnTe/GaAs films in reported.