• 전기의세계
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• v.28 no.9
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• pp.35-40
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• 1979

A grounded inductor is proposed which contains only one resistor and operational amplifier. The circuit uses the inherent frequency dependent characteristic of an amplifier to simulate the inductor. A parallel resonance circuit is constructed with the proposed circuit. It has been proved by the experimental results of the resonant circuit that the proposed circuit is equivalent to the grounded lossy inductor. The lossy inductor is imbedded in a passive bandstop prototype, and the resultant characteristic curve has been verified by the experiment.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.4
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• pp.92-99
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• 2011

Effect of a finite grounded substrate on mutual coupling characteristics of a 2-element array antenna using inductor loaded patch antennas is investigated. The mutual coupling characteristics of a 2-element array antenna using inductor loaded patch antennas positioned along the E-plane are compared with those positioned along the H-plane. The magnitude of mutual coupling is very small and the distance between the center of element and the substrate edge on the E-plane for the minimum mutual coupling is similar regardless of the direction at which antenna elements are positioned in the case of a 2-element array antenna using inductor loaded patch antennas.

• ETRI Journal
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• v.27 no.4
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• pp.427-432
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• 2005

In this study, we present a new topology for realizing a grounded inductor employing only a single current conveyor, called a negative-type modified inverting second-generation current conveyor (MICCII-), and a minimum number of passive components, two resistors, and one capacitor. The non-ideality effects of the MICCII- on a simulated inductor are investigated. To demonstrate the performance of the presented inductance simulator, we use it to construct a third order Butterworth high-pass filter and a parallel resonant circuit. Simulation results are given to confirm the theoretical analysis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.311-320
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• 2008

In this paper, a new variable active inductor using a conventional grounded active inductor with feedback variable LC-resonator is proposed. The grounded active inductor is realized by the gyrator-C topology and the variable LC-resonator is realized by the low-Q spiral inductor and varactor. This variable LC-resonator can compensate the degradation of Q-factor due to parasitic capacitance of a transistor, and the frequency range with high Q-factor is adjustable by resonance frequency adjustment of LC-resonator. The fabricated variable active inductor with Magnachip $0.18{\mu}m$ CMOS process shows that high-Q frequency range can be adjusted according to varactor control voltage from 4.66 GHz to 5.45 GHz and Q-factor is higher than 50 in the operating frequency ranges. The measured inductance at 4.9GHz can be controlled from 4.12 nH to 5.97 nH by control voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.539-546
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• 2007

In this paper, a 3-D EM simulation methodology for on-chip spiral inductor analysis has provided and it is shown that the methodology can be adapted to the highly predictable design for CMOS VCO. LC-resonator type VCO have fabricated by using standard 0.25 um CMOS process. And the LC VCO layout case which has pattern ground shielded inductors and the other layout case which has no pattern grounded inductors were fabricated for the verification of their effects on the VCO's phase noise by reducing the Q-factor of inductors. Fabricated VCO has 3.094 GHz, -12.15 dBm output at the tuning voltage of 2.5 V, and from the simulation, Q-factor of the pattern grounded inductor has increased 8% at 3 GHz, and from the measurement results, the phase noise has reduced by 9 dB at the 3 MHz off-set frequency for the pattern grounded inductor layout case.

• Journal of IKEEE
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• v.19 no.4
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• pp.465-471
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• 2015

An LC-tuned sinusoidal voltage-controlled oscillator (VCO) using temperature-stable linear operational transconductance amplifiers (OTAs) is presented. Its architecture is based on Hartley oscillator configuration, where the inductor is active one realized with two OTAs and a grounded capacitor. Two diode limiters are used for limiting amplitude. A prototype oscillator built with discrete components exhibits less than 3.1% nonlinearity in its current-to-frequency transfer characteristic from 1.99 MHz to 39.14 MHz and $220ppm/^{\circ}C$ frequency stability to the temperature drift over 0 to $75^{\circ}C$. The total harmonic distortion (THD) is as low as 4.4 % for a specified frequency-tuning range. The simulated phase noise of the VCO is about -108.9 dBc/Hz at 1 MHz offset frequency in frequency range of 0.4 - 46.97 MHz and property of phase noise of VCO is better than colpitts-VCO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.37-44
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• 2007

A low-voltage high-linear bipolar OTA and its application to IF bandpass filter for GSM cellular telephone are presented. The OTA consists of a low-voltage linear transconductor, a translinear current gain cell, and three current mirrors. The bandpass filter is composed of two cascaded identical second-order bandpass filters, which consist of a resistor, a capacitor, and a grounded simulated inductor realized with two OTA's and a grounded capacitor. SPICE simulations using an 8 GHz bipolar transistor-array parameter show that the OTA with a transconductance of 1 mS exhibits a linearity error of less than ${\pm}2%$ over an input voltage range of ${\pm}0.65\;V$ at supply voltages of ${\pm}2.0\;V$. Temperature coefficient of the transconductance is less than $-90ppm/^{\circ}C$. The bandpass filter has a center frequency of 85 MHz and Q-factor of 80. Temperature coefficient of the center frequency is less than $-182ppm/^{\circ}C$. The power dissipation of the filter is 128 mW.

• ETRI Journal
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• v.46 no.3
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• pp.550-563
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• 2024

A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper. The reported configuration is a purely resistor-less realization that provides electronically controllable realized inductance through biasing quantities of DO-VDBAs and does not rely on any constraints related to matched values of parameters. This structure exhibits excellent behavior under the influence of tracking errors in DO-VDBAs and does not exhibit instability at high frequencies. The simple and compact metal-oxide semiconductor (MOS) implementation of the DO-VDBAs (eight MOS per DO-VDBA) and adoption of grounded capacitance make the proposed circuit suitable for on-chip realization from the perspective of chip area consumption. The function of the pure grounded inductance is validated through high pass/bandpass filtering applications. To test the proposed design, simulations were performed in the PSPICE environment. Experimental validation was also conducted using the integrated circuit CA3080 and operational amplifier LF-356.

• Journal of IKEEE
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• v.11 no.3
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• pp.122-128
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• 2007

Sinusoidal voltage-controlled oscillators (VCOs) based on Colpitts and Hartley oscillators are presented. They consist of a LC parallel-tuned circuit connected in a negative-feedback loop with an OTA-R amplifier and two diode limiters, where the inductor is simulated one realized with temperature-stable linear operational transconductance amplifiers (OTAs) and a grounded capacitor. Prototype VCOs are built with discrete components. The Colpitts VCO exhibits less than 1% nonlinearity in its current-to-frequency transfer characteristic from 4.2 to 21.7 MHz and ${\pm}$95 ppm/$^{\circ}C$ temperature drift of frequency over 0 to $70^{\circ}C$. The total harmonic distortion (THD) is as low as 2.92% with a peak-to-peak amplitude of 0.7 V for a frequency-tuning range of 10.8-32 MHz. The Hartley VCO has the temperature drift and THD of two times higher than those of the Colpitts VCO.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.21-27
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• 2015

An improved method based on direct extraction and simultaneous optimization is developed to determine model parameters of symmetric inductors fabricated by the high resistivity(HR) silicon-on-insulator(SOI) RF CMOS process. In order to improve modeling accuracy, several model parameters are directly extracted by Y and Z-parameter equations derived from two equivalent circuits of symmetric inductor and grounded center-tap one, and the number of unknown parameters is reduced using parallel resistance and total inductance equations. In order to improve optimization accuracy, two sets of measured S-parameters are simultaneously optimized while same model parameters in two equivalent circuits are set to common variables.