• Korean Journal of Materials Research
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• v.27 no.8
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• pp.431-437
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• 2017

This study investigated the surface pit corrosion of SS420J2 stainless steel accompanied by intergranular crack. To reveal the causes of surface pits and cracks, OM, SEM, and TEM analyses of the microstructures of the utilized SS420J2 were performed, as was simulated heat treatment. The intergranular cracks were found to have been induced by a grain boundary carbide of $(Cr,Fe)_{23}C_6$, which was identified by SEM/EDS and TEM diffraction analyses. The mechanism of grain boundary sensitization occurred at the position of the carbide, followed by its occurrence at the Cr depleted zone. The grain boundary carbide of $(Cr,Fe)_{23}C_6$ type precipitated during air cooling condition after a $1038^{\circ}C$ solid solution treatment. The carbide precipitate formation also accelerated at the band structure formed by cold working. Therefore, using manufacturing processes of cooling and cold working, it is difficult to protect SS420J2 stainless steel against surface pit corrosion. Several counter plans to fight pit corrosion by sensitization were suggested, involving alloying and manufacturing processes.

• Applied Microscopy
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• v.45 no.1
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• pp.23-31
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• 2015

Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.4
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• pp.299-305
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• 2003

This research is for the relationship with heat treatment cooling temprature and the characteristic of Mechanical properties of Boron-Addition-Steel, the main material and SM25C steel, the sub material, structure viewing fractography, hardness test, tensite test and are carried out after the manufacturing small-specimen treated with heat of $750^{\circ}C$, $850^{\circ}C$, $1050^{\circ}C$. The influence to the Mechanical properties accompanied by AISI51B20, Boron-Addition-steel shows the following result. 1. The influenc of heat treatment by the content of cabon-steel is dominant. Addition of boron result is Strengthening structure effectively by segregation and improving over all mechanical characters such as good. it results from the increase of temacity by the stability of inter granular with improvement of harden-ability. 2. Boron-Addition-Steel exist in the from of martensite structure accompanied by the ferrite precipitition centering around grain boundary, and is improved to Hv 200. 3. The height of harden-ability and fatigue stress the influence of heat results from crystal structure of martensite by difference of strength level in the structure of ferrite and doesn't have am effect on sensibility of temperature, and turns out to defend on production and growth of Matrix-structure-factor.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.74-78
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• 1994

Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{\circ}C$/30 nm, and poly-Si, 6$25^{\circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.568-573
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• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• Journal of Technologic Dentistry
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• v.34 no.4
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• pp.345-352
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• 2012

Purpose: The age-hardening mechanism of an Au-Ag-Cu-Pt-Zn alloy for crown and bridge fabrication was investigated by means of hardness test, X-ray diffraction study and field emission scanning electron microscopic observation. Methods: Before hardness testing, the specimens were solution treated and then were rapidly quenched into ice brine, and were subsequently aged isothermally at $400-450^{\circ}C$ for various periods of time in a molten salt bath and then quenched into ice brain. Hardness measurements were made using a Vickers microhardness tester. The specimens were examined at 15 kV using a field emission scanning electron microscope. Results: By the isothermal aging of the solution-treated specimen at $450^{\circ}C$, the hardness increased rapidly in the early stage of aging process and reached a maximum hardness value. After that, the hardness decreased slowly with prolonged aging. However, the relatively high hardness value was obtained even with 20,000 min aging. By aging the solution-treated specimen, the f.c.c. Au-Ag-rich ${\alpha}_0$ phase was transformed into the Au-Ag-rich ${\alpha}_1$ phase and the AuCu I ordered phase. Conclusion: The hardness increase in the early stage of aging process was attributed to the formation of lattice strains by the precipitation of the Cu-rich phase and then subsequent ordering into the AuCu I-type phase. The decrease in hardness in the later stage of aging process was due to the release of coherency strains by the coarsening of tweed structure in the grain interior and by the growth and coarsening of the lamellar structure in the grain boundary. The increase of inter-lamellar space contributed slightly to the softening compared to the growth of lamellar structure toward the grain interior.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.7
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• pp.670-674
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• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• Journal of the Korea Institute of Military Science and Technology
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• v.2 no.1
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• pp.183-193
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• 1999

Semiconducting (Sr0.85Ca0.15)TiO3 ceramics were prepared by conventional powder synthesis techniques, and then alkaline metallic cations were diffused into the ceramic bodies. The threshold voltage of the ceramics increases with increasing diffusion time and the amount of diffused materials. The ceramics had boundary potential heights of 0.01 ~ 2.89 eV, while their boundary resistance ranged from 2.2 $M{\Omega}$ to 120.4 $M{\Omega}$. Such electrical characteristics of the boundaries were correlated with the boundary structure of the ceramics obtained by transmission electron microscopy.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.83-89
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• 1995

In this paper, the specimens-($Ba_{0.997}$ L $a_{0.003}$)Ti $O_{3}$ + xTi $O_{2}$, x=0.005, 0.01, 0.02, 0.03[mol]- were fabricated by a solid-state reaction method which is easy in microstructure control and good in mass production. Their crystalline structures and microstructures were analysed, and electrical properties were investigated. The perovskite-crystalline structure is confirmed by XRD, and it is exhibited by SEM that the grain grows with an addition of Ti $O_{2}$. Resistivity decreases with increasing sinteiing temperature, and the specimen of ($Ba_{0.997}$ L $a_{0.003}$)Ti $O_{3}$ + 0.02Ti $O_{2}$ sintered at 1350.deg. C shows the best PTC effects. The complex impedance plots exhibit the serial equivalent circuit of ( $R_{gb}$ / $C_{gb}$ ) and $R_{g}$ it is realized that PTC effect is attributed to the resistivity of grain boundary.ary.y.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.539-543
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• 2001

ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.