• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 International Symposium
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• pp.21-30
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• 2002

According the difference of flex substrate, (reel tape), there are three kind assembly types of LCD driver IC is COG, TCP and COF, respectively. The TCP is the maturest in these types for stability of raw material supply and other specification. And TCP is the major assembly type of LCD driver IC and the huge demand from Taiwan's large TFT LCD panel house since this spring. But due to its package structure and the raw material applied in this package, there is some limitation in fine pitch application of this package type, (TCP). So, COF will be very potential in compact and portable application comparison with TCP in the future. There are three kinds assembly methods in COF, one is ACF by using the anisotropic conductive film to connect the copper lead of tape and gold bump of IC, another is eutectic bonding by using the thermo-pressure to joint the copper lead of tape and gold bump of IC, and last is NCP by using non-conductive paste to adhere the copper lead of tape and gold bump of IC. To have a global realization, this paper will briefly review the status of Taiwan's large TFT panel house, the internal driver IC design house, and the back-end assembly house in the beginning. The different material property of raw material, PI tape is also compared in the paper. The more detail of three kinds of COF assembly method will be described and compared in this paper.

• 대한금속재료학회지
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• 제49권3호
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• pp.237-242
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• 2011

The effect of shearing speed on the shear force and energy of Sn-0Ag-0.5Cu solder ball was investigated. Various UBM (under bump metallurgy)'s on Cu pads were used such as ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold; Ni/Pd/Au), ENIG (Electroless Nickel, Immersion Gold; Ni/Au), OSP (Organic Solderability Preservative). To fabricate a shear test specimen, a solder ball, $300{\mu}m$ in diameter, was soldered on a pad of FR4 PCB (printed circuit board) by a reflow soldering machine at $245^{\circ}C$. The solder bump on the PCB was shear tested by changing the shearing speed from 0.01 m/s to 3.0 m/s. As experimental results, the shear force increased with a shearing speed of up to 0.6 m/s for the ENIG and the OSP pads, and up to 0 m/s for the ENEPIG pad. The shear energy increased with a shearing speed up to 0.3 m/s for the ENIG and the OSP pads, and up to 0.6 m/s for the ENEPIG pad. With a high shear speed of over 0 m/s, the ENEPIG showed a higher shear force and energy than those of the ENIG and OSP. The fracture surfaces of the shear tested specimens were analyzed, and the fracture modes were found to have closer relationship with the shear energy than the shear force.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.247-251
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• 2002

In this paper the maximum current carrying capability of ACAs flip chip joint is investigated based on two failure mechanisms: (1) degradation of the interface between gold stud bumps and aluminum pads; and (2) ACA swelling between chips and substrates under high current stress. For the determination of the maximum allowable current, bias stressing was applied to ACAs flip chip joint. The current level at which current carrying capability is saturated is defined as the maximum allowable current. The degradation mechanism under high current stress was studied by in-situ monitoring of gold stud bump-aluminum pad ACA contact resistance and also ACA junction temperature at various current level. The cumulative failure distributions were used to predict the lifetime of ACAs flip chip joint under high current stressing. These experimental results can be used to better understand and to improve the current carrying capability of ACA flip chip joint.

• 한국재료학회지
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• 제24권3호
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• pp.166-173
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• 2014

The effects of printed circuit board electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the electromigration reliability and shear strength of Sn-3.5Ag Pb-free solder bump were systematically investigated. In-situ annealing tests were performed in a scanning electron microscope chamber at 130, 150, and $170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). Electromigration lifetime and failure modes were investigated at $150^{\circ}C$ and $1.5{\times}10^5A/cm^2$, while ball shear tests and failure mode analysis were conducted under the high-speed conditions from 10 mm/s to 3000 mm/s. The activation energy of ENIG and OSP surface finishes during annealing were evaluated as 0.84 eV and 0.94 eV, respectively. The solder bumps with ENIG surface finish showed longer electromigration lifetime than OSP surface finish. Shear strengths between ENIG and OSP were similar, and the shear energies decreased with increasing shear speed. Failure analysis showed that electrical and mechanical reliabilities were very closely related to the interfacial IMC stabilities.

• 한국표면공학회지
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• 제50권3호
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• pp.170-176
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• 2017

EPIG (Electroless Pd/immersion Au) process was studied to replace ENIG (electroless Ni/immersion Au) and ENEPIG (electroless Ni/electroless Pd/immersion Au) processes for bump surface treatment used in high reliable flip chip packages. The palladium and gold layers formed by EPIG process were uniform with thickness of 125 nm and 34.5 nm, respectively. EPAG (Electroless Pd/autocatalytic Au) also produced even layers of palladium and gold with the thickness of 115 nm and 100 nm. TEM results exhibited that the gold layer in EPIG surface had crystalline structure while the palladium layer was amorphous one. After annealing at 250 nm, XPS analysis indicated that the palladium layer with thickness more than 22~33 nm could act as a diffusion barrier of copper interconnects. As a result of comparing the chip shear strength obtained from ENIG and EPIG surfaces, it was confirmed that the bonding strength was similar each other as 12.337 kg and 12.330 kg, respectively.

• Journal of Welding and Joining
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• 제29권1호
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• pp.52-58
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• 2011

In this paper, the direct bonding process between FPCB and HPCB was studied. By using an ultrasonic horn which is mounted on the ultrasonic bonding machine, it is alternatively possible to bond the gold pads attached on the FPCB and HPCB at room temperature without an adhesive like ACA or NCA. The process condition for obtaining more bonding strength than 0.6 Kgf, which is commercially required, was carried out as 40 kHz of frequency, 0.6 MPa of bonding pressure and 2 second of bonding time. The peel off test was performed for evaluating bonding strength which results in more than 0.8 Kgf.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.81-88
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• 2010

Sn-3.0Ag-0.5Cu 솔더범프의 금속간화합물 성장거동에 미치는 PCB 표면처리의 영향을 알아보기 위해서 PCB 패드 표면에 각각 OSP, immersion Sn, 그리고 ENIG를 처리하였고, 열처리는 $150^{\circ}C$ 조건에서 실험을 실시하였다. 또한, 전류인가시 Sn-3.0Ag-0.5Cu 솔더범프의 접합부 계면반응에 미치는 표면처리의 영향을 알아보기 위해서 $150^{\circ}C$, $4{\times}10^3\;A/cm^2$ 조건에서 electromigration특성을 비교 평가하였다. 열처리시 OSP와 immersion Sn의 금속간화합물 성장거동은 서로 비슷한 경향을 보인 반면, ENIG는 다른 표면처리에 비해 훨씬 느린 성장거동을 보였다. electromigration특성 평가결과 열처리에 비해 금속간화합물의 성장이 가속화되나 표면처리별 경향은 유사하였고, 전자 이동 방향에 따른 음극-양극에서 금속간화합물 형성의 차이를 보이는 극성효과(polarity effect)가 나타나는 것을 알 수 있었다.

• 마이크로전자및패키징학회지
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• 제22권2호
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• pp.47-53
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• 2015

인쇄회로기판 솔더 상부 및 하부 접합부의 서로 다른 표면처리 조건에 따른 Sn-3.0Ag-0.5Cu (SAC305) 접합부의 열처리 및 전류 인가에 따른 금속간 화합물 성장거동을 비교하기 위하여 in-situ 미세구조분석 및 electromigration (EM) 수명평가를 실시하였다. 솔더 접합 직후, 상부 접합부의 electroless nickel immersion gold (ENIG) 표면처리에서는 $(Cu,Ni)_6Sn_5$, 하부 접합부의 organic solderability preservative (OSP) 표면처리에서는$ Cu_6Sn_5$, $Cu_3Sn$ 금속간 화합물이 접합 계면에서 생성되었다. EM 수명평가 결과 온도 $130^{\circ}C$, 전류밀도 $5.0{\times}10^3A/cm^2$ 하에서 평균파괴시간이 약 78.7 hrs으로 도출되었고, 하부 OSP 표면처리에서 전자가 솔더로 빠져나가는 부분에서 Cu의 소모에 의한 단락이 주 손상기구로 확인되었다. In-situ 주사전자현미경을 통해 계면 미세구조 분석 결과 상부 접합부 ENIG 표면처리에서 전자의 방향에 따른 미세구조의 큰 차이가 없고 뚜렷한 손상이 관찰되지 않았으나, 하부 접합부 OSP 표면처리의 경우 전자가 솔더로 유입되는 부분에서 빠른 Cu 소모로 인한 보이드 성장이 관찰되었다. 따라서, SAC305무연솔더 접합부에서 ENIG 표면처리가 OSP 표면처리보다 보다 우수한 EM확산방지막 역할을 하여 금속간 화합물 성장을 억제하고 보다 우수한 EM 신뢰성을 보이는 것으로 판단된다.

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.11-17
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• 2009

휴대폰 및 휴대기기의 낙하 충격에 대한 관심이 증가되고 있는 상황에서 솔더 볼 접합부의 낙하 충격특성은 패드의 종류와 리플로우 횟수에 영향을 받게 되어 이에 따른 신뢰성 평가가 요구된다. 이와 관련한 평 가법으로 일반적으로는 JEDEC에서 제정한 낙하충격 시험법을 사용하고 있으나 이 방법은 고 비용과 장시간이 소모되는 문제가 있어 본 연구에서는 낙하충격 특성을 간접적으로 평가하는 시험항목인 고속 전단시험을 실시하여 리플로우 횟수에 의해 성장하는 금속간 화합물 층과 OSP(Organic Solderability Preservative), ENIG(Electroless Nickel Immersion Gold) 및 ENEPIG(Electroless Nickel Electroless Palladium Immersion Gold) 등 표면처리에 따른 고속 전단특성을 비교, 분석하였다. 그 결과 리플로우 횟수가 증가함에 따라 IMC 층의 성장으로 고속 전단강도와 충격 에너지 값은 점차 감소하였다. 리플로우 횟수가 1회일 때는 ENEPIG, ENIG, OSP 순으로 고속 전단강도와 충격 에너지 값이 높았고 8회일 때는 ENEPIG, OSP, ENIG 순으로 충격 에너지 값이 높게 측정되었다.