• Title/Summary/Keyword: Gold Bonding Wire

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Deformation Properties of Gold Bonding Wire for VLSI Packaging Applications (반도체 패키징용 Gold Bonding Wire의 변형특성 및 해석)

  • Kim K.;Hong S. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2001.05a
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    • pp.250-253
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    • 2001
  • Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

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Inductance Characterization of Bonding Wires for 1-10㎓ Radio Frequency Packages (1-10 ㎓ 초고주파 패키지용 bonding wire 인덕턴스 특성 측정)

  • Jung, Tae-Ho;Jee, Yong
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.221-224
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    • 2001
  • In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

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Characteristics of copper wire wedge bonding

  • Tian, Y.;Zhou, Y.;Mayer, M.;Won, S.J.;Lee, S.M.;Cho, S.Y.;Jung, J.P.
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.34-36
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    • 2005
  • Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

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Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

  • Choi, Sung-Min;Lee, Gae-Ho;Han, Jae-Kil
    • Bulletin of the Korean Chemical Society
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    • v.29 no.2
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    • pp.393-397
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    • 2008
  • Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L-1 at 265.118 nm for Ge and 0.009 mg L-1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW+HBr+HNO3, the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW+HCl+HNO3, due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg-1 and 9.24 mg kg-1, respectively, and the P contents, using the same methods, were 22.49 mg kg-1 and 23.09 mg kg-1, respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

Analysis of Frequency Response Depending on Wire-bonding Length Variation (Wire-bonding의 길이 변화에 따른 주파수별 특성 분석)

  • Gwon, Eun-Jin;Mun, Jong-Won;Ryu, Jong-In;Park, Se-Hoon;Kim, Jun-Chul
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.551-552
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    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

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Z-axis Contact Detection Algorithm for a Wire Bonder using a Discrete Kalman Filter

  • Kim, Jung-Han
    • International Journal of Precision Engineering and Manufacturing
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    • v.8 no.1
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    • pp.52-58
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    • 2007
  • We propose a new contact detection algorithm for fine pitch wire bonding. Fast and stable contact detection of the z-axis in wire bonding is extremely important to maintain the quality of fine pitch gold wire bonding processes, which use a small pad less than $70{\mu}m$ in diameter. A small perturbation in the contact detection time causes a large difference in the size of the formed squashed ball. The new detection method is based on a statistical approach and designed for a discrete Kalman filter. It is faster and has smaller detection time variations than conventional detection methods. Experimental results are presented to demonstrate the advantages of the proposed algorithm.

A Study on the Electrical Characteristics of Different Wire Materials

  • Jeong, Chi-Hyeon;Ahn, Billy;Ray, Coronado;Kai, Liu;Hlaing, Ma Phoo Pwint;Park, Susan;Kim, Gwang
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.47-52
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    • 2013
  • Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.

Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.221-225
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    • 2014
  • Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

Contact Detection Algorithm of the Z-axis of a Wire Bonder (와이어 본더 시스템의 Z축 표면 접촉 검출 알고리듬 개발)

  • Kim Jung-Han
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.7 s.172
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    • pp.137-145
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    • 2005
  • A new design of contact detection algorithm is proposed for the z-axis of a wire bonder that interconnects between pads and leads in semiconductor manufacturing processes. Fast and stable contact detection of the z-axis is extremely important fer maintaining proper quality in the fine pitch gold wire bonding process, which has a small pad size of below 70um. The new method is based on a statistical approach and designed for the discrete Kalman filter. Real wire bonding experimental results are presented to demonstrate the advantages of the proposed algorithm.

A STUDY ON THE REDUCTION OF GALVANIC CURRENT BETWEEN AMALGAM AND GOLD ALLOY WITH VARIOUS CHEMICAL AGENTS (수종 아말감과 금합금의 갈바닉 전류 측정에 관한 연구)

  • Kim, Seung-Soo;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.18 no.2
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    • pp.469-481
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    • 1993
  • The purpose of this study was to achieve the reduction of the galvanic current between the dental amalgam alloy and gold alloy. In order to measure the galvanic current between these two metals a prep in the size of $4{\times}13mm$ which was filled with amalgam and another prep of $4{\times}2mm$ was filled with gold alloy was made in the acrylic resin. These two preps were then connected to a 2mm diameter copper wire. Using an ammeter to measure the galvanic current, six different kinds of amalgam and gold alloy were immersed in saline solution with approximately 10mm distance between the two alloys. Chemical agents that are thought to reduce the galvanic current such as hydrazine. silver nitrate, potassium chromate, and bonding agents such as Scotch bond 2(3M) and All bond 2(Bisco) were applied to the alloy surface. Cathodic inhibitor such as hydrazine was applied to gold alloy where as anodic inhibitor such as silver nitrate and potassium chromate were applied to amalgam. Both bonding agents, Scotch bond 2(3M) and All bond 2 (Bisco), were applied to amalgam. The following results were obtained when the currency on the coated alloy surface was compared to the uncoated surface. 1. The galvanic currency went down as the time elapsed and after 30 minutes no change was detected. 2. Initial currency was higher in low copper amalgam compared to high copper amalgam. Intitial currency was the highest in low copper lathe-cut amalgam. 3. Group of gold coated with hydrazine had the most reduction in galvanic currency. 4. Group of amalgam coated with silver nitrate or potassium chromate also showed significant reduction in galvanic currency. 5. The bonding agents also helped reduce galvanic currency. 6. Of all the agents used to reduce galvanic currency, silver nitrate showed the best result.

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