• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.31-37
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• 1997

The magnetoresistance and the saturation field behavior of the Co-Ag nano granular films as a function of the composition and the ferromagnetic underlayer and overlayermaterials were investigated. The maximum magnetoresistance of 23% and the saturation field of 2.3 kOe at room temperature were obtained in the as-deposited 3000$\AA$ $Co_{30}Ag_{70}$ single alloy films. The magnetoresistance and the saturation field of 100$\AA$ $Co_{30}Ag-{70}$ alloy film were 3.65 % and 3.0 kOe respectively. Those of the sandwiched films with 200$\AA$ Fe were 3.3 % and 1.23 kOe respectively. The saturation field of the sandwiched alloy films could be reduced by the exchange coupling between the ferromagnetic layers and the alloy layer. The effective depth of the exchange coupling was approximately 150$\AA$ in each Fe layer. Among the Fe, Co, and FeNi, the most effective materials to reduce the saturation field of the sandwiched alloy films was Fe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.5
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• pp.421-426
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• 2008

The magnetic bio-sensor used the PHR (planar hall resistance) effect generated by the free layer in spin-valve giant magnetoresistance structure of Ta/NiFe/CoFe/Cu/NiFe/IrMn/Ta. The PHR element with micrometer size was fabricated through the photolithograph and dry etching process. The PHR signal with magnetic field was measured under the conditions of with and without single magnetic bead. A single magnetic bead of diameter $2.8\;{\mu}m$ was successfully detected using the PHR sensor. Therefore, the high resolution PHR sensor can be applied to bio-sensor application utilizing the output voltage variation of the PHR signals in the presence and absence of a single magnetic bead.

• Journal of the Korean Magnetics Society
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• v.25 no.1
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• pp.16-21
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• 2015

The micro device, coil, and channel for the biosensor integrated with the GMR-SV device based on the antiferromagnetic IrMn layer was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ passed on the micro channel, the movement of $RBC+{\mu}Beads$ is controlled by the electrical AC input signal. The $RBC+{\mu}Beads$ having a micro-magnetic field captured above the GMR-SV device is changed as the output signals for detection status. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property as the membrane's deformation of RBC coupled to magnetic beads.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Journal of Magnetics
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• v.9 no.2
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• pp.60-64
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• 2004

In this paper calculations of magnetisation and magnetoresistance characteristics of the Spin Valve (SV) and Pseudo Spin Valve (PSV) spintronics structures are reported and compared with the experimental data. The magnetisation reversal process was analysed with respect to the Stoner- Wohlfahrt model of total surface energy in terms of uniaxial anisotropy, exchange coupling between ferromagnetic layers, unidirectional exchange anisotropy of pinned layer (modelled by exchange coupling between magnetisation of pinned layer and net magnetisation of antiferromagnetic layer with high anisotropy). The numerical simulation of the model to the experimental magnetisation data yielded the above parameters for SV and PSV structures. These parameters were used to more sophistically micromagnetic modelling tool originating from the project called Object Oriented Micromagnetic Framework. Influence of the shape anisotropy of the Magnetic Tunnelling Junction cell used in MRAM was simulated by means of micromagnetic simulations. Results were compared to those obtained from the spot Kerr measurements.

• Journal of Magnetics
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• v.8 no.1
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• pp.24-31
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• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.

• Journal of Magnetics
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• v.14 no.2
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• pp.80-85
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• 2009

The mineral dissolution sensor system using GMR-SV and glass/Mg(200 nm) was prepared and characterized. The magnetic field sensitivity of GMR-SV to microscopic magnetic variation was about 0.8%/Oe. The change that occurs when Mg-film dissolves in water, the solubility of water, which is one of the basic properties of mineral water, was sensed by measuring the subtle variation of an electric current. In the case of edible water with Mg mineral added, bubbles were generated on the surface of the Mg film in the first 45 minutes, and the number of drops that were dissolved more rapidly than with the tap and DI waters later reduced to zero. For the edible water samples that each had different mineral Mg concentrations, the Mg solubility speed significantly differed. After injecting Mg film into the edible water, the magnetoresistance of the output GMR-SV signal decreased from a maximum of $45.4\;{\Omega}$ to a minimum of $43.6\;{\Omega}$. The measurement time was within 1 min, giving the rate of change ${\Delta}R/{\Delta}t=0.18\;{\Omega}/s$. This measurement system can be applied to develop a mineral Mg solubility GMR-SV sensor that can be used to sense the change from edible water to reduced alkali.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.173-177
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• 2012

The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.162-168
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• 2015

The ${\mu}$-turn coil having a width of ${\mu}m$ on the GMR-SV (giant magnetoresistance-spin valve) device based on the antiferromagnetic IrMn layer was fabricated by using the optical lithography process. In the case of GMR-SV film and GMR-SV device, the magnetoresistance ratios and the magnetic sensitivities are 4.4%, 2.0%/Oe and 1.6 %, 0.1%/Oe, respectively. In the y-z plane the distribution of magnetic field of GMR-SV device and $10{\mu}$-turns coil which put under the several magnetic bead(MB)s with a diameter of $1{\mu}m$ attached to RBC (red blood cell) was analyzed by the computer simulation using the finite element method. When the AC currents of 20 kHz from 0.1 mA to 10.0 mA flow to the 10 turns ${\mu}$-coil, the magnetic field at the position of $z=0{\mu}m$ at the center of coil was calculated from $30.1{\mu}T$ to $3060{\mu}T$ in proportion to the current. The magnetic field at the position of $z=10{\mu}m$ was decreased to one-sixth of that of $z=0{\mu}m$. It was confirmed that the $10{\mu}$-turn coil having enough magnitude of magnetic field for the capture of RBC is possible to use as a biosensor for the detection of magnetic beads attached to RBC.