• YAKHAK HOEJI
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• v.25 no.4
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• pp.193-197
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• 1981

Germanium (Ge) content in Zingiberis Rhizoma was determined by flameless atomic absorption spectrometry with a graphite tube atomizer. The Ge content of the cortical layer was 65.mu.g/g, the central cylinder, $98\mu$g/g and the total, $87\mu$g/g. In the effect of the extraction of Ge by various solvents, polar solvent was more effective than the nonpolar one, Especially, water was the most effective solvent. The water extract of Zingiberis Rhizoma, separated by sephadex G-25 gel filtration, was fractionated into 2 peaks at 254nm. Both the peaks showed atomic absorptions of Ge. It may be concluded that the Ge components of Zingiberis Rbizoma exist as the form of an aqueous organic compounds or associated forms with proteins.

• Journal of Radiation Industry
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• v.5 no.2
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• pp.101-106
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• 2011

The separation of germanium and gallium ion with metal oxide was introduced into the development of $^{68}Ge/^{68}Ga$ generator. Germanium and gallium within mixed solution were respectively separated by using a liquid-liquid extraction and a column chromatographic method. The separation of Ge within high concentrated hydrochloric and sulfuric acid was conducted by the extraction to $CCl_4$ and the back-extraction to 0.05 M HCl. An optimum condition of the extraction by $CCl_4$ was in 5~7 M HCl and efficiency was around 80%. The gallium was selectively separated by using $Al_2O_3$ among metal oxides as sorbents from the mixed solution in 0.04~0.10 M HCl condition.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.65-70
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• 2019

Simple fabrication of a powdered Ge-reduced graphene oxide (Ge-rGO) composite via spray pyrolysis and reduction is introduced herein. Successful incorporation of the rGO nanosheets with Ge hindered the aggregation of Ge and conferred enhanced structural stability to the composite by alleviating the mechanical stress associated with drastic volume changes during repeated cycling. The Li-ion storage performance of Ge-rGO was compared with that of powdered Ge metal. The reversible discharge capacity of Ge-rGO at the $200^{th}$ cycle was $748mA\;h\;g^{-1}$ at a current density of $1.0A\;g^{-1}$ and Ge-rGO showed a capacity of $375mA\;h\;g^{-1}$ even at a high current density of $5.0A\;g^{-1}$. The excellent performance of Ge-rGO is attributed to the structural robustness, enhanced electrical conductivity, and formation of open channels between the rGO nanosheets, which facilitated electrolyte penetration for improved Li-ion diffusion.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.153-166
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• 2003

Failure analysis is fundamental to the design and development methodology of electrostatic discharge (ESD) devices and ESD robust circuits. The role of failure analysis (FA) in the models, methodology, band mechanisms evaluation for improving ESD robustness of semiconductor products in CMOS, silicon-on-insulator (SOI) and silicon germanium (SiGe) technologies will be reviewed.

• Korean Journal of Environmental Agriculture
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• v.27 no.3
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• pp.245-252
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• 2008

The growth characteristics and the Germanium (Ge) uptake of rice plant (Hopyungbyeo) in soil with Ge were investigated under different soil textures to obtain the basic information for agricultural utilization of Ge. This study was carried out in the Wagner pot ($15,000^{-1}a$). Ge concentration in soils such as clay loam, silt loam, loam and sandy loam for rice plant cultivation was treated at $8mg\;kg^{-1}$. The growth status of rice plant was almost similar in all soil texture, and rice yield was higher in the order of silt loam > clay loam > loam > sandy loam. In rice bran, the Ge uptakes in silt loam, clay loam, loam and sandy loam were 980, 868, 754 and $803{\mu}g\;pot^{-1}$, respectively. The Ge uptakes of brown rice and polish rice were greater in the order of silt loam > sandy loam > clay loam > loam. In silt loam, the Ge uptake rates in leaf, stem, root, rice bran and brown rice were 19.7, 2.3, 0.03, 3.1 and 0.44%, respectively. Therefore, under the given experimental condition the optimum soil texture for production of functional rice with Ge is a silt loam.

• YAKHAK HOEJI
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• v.27 no.1
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• pp.1-10
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• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.2
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• pp.16-21
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• 1967

This report describes actual fabrication mehod of Li drifted Ge detector. The gamma-ray spectrum from Cl(n, r) reaction measured by this Li drifted Ge detector are also shown. Energy resolution(FWHM) of this Li drifted Ge detector is 4.5KeV at the 122KeV( ), and 10KeV a the 1333KeV( ) respectively.

• Korean Journal of Soil Science and Fertilizer
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• v.43 no.2
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• pp.166-173
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• 2010

In order to obtain the basic information for agricultural utilization of germanium (Ge), the growth characteristics, Ge uptake, and grain quality of rice plant (Hopyungbyeo) were investigated under different germanium ($GeO_2$, and commercial Ge) treatments in paddy field. Phytotoxicity was detected in $GeO_2$ treatment but not in commercial Ge treatment. The grain yield was greater in the order of control treatment > commercial Ge treatment > $GeO_2$ treatment. The dry weight was greater in order of control treatment > $GeO_2$ treatment ${\geq}$ commercial Ge treatment. The Ge content of leaf in $GeO_2$ treatment was 6 times (177 mg $m^{-2}$) higher than that in commercial Ge treatment. The Ge content in rice bran was not different in $GeO_2$, and commercial Ge treatments. The Ge contents of brown rice in$GeO_2$, and commercial treatments were 40.9, and 31.1 mg $kg^{-1}$, respectively. The Ge uptake rates in rice plant was higher in the order of leaf > rice bran > brown rice > stem > root. Under $GeO_2$, 15.56% of Ge absorbed into plant with 11.1% in leaf, 1.6% in stem, 0.03% in root, 2.2% in rice bran and 0.73% in brown rice. Under commercial Ge treatment, 5.19% of Ge absorbed into plant with 1.8% in leaf, 0.46% in stem, 0,01% in root, 2.2% in rice bran, and 0.71% in brown rice. Based on these results, the Ge contents in polished rice in commercial Ge treatment were higher than those in $GeO_2$ treatment. However, the Ge contents of rice grain (containing rice bran and polished rice) in $GeO_2$ treatment were higher than those in commercial Ge treatment.

• Korean Journal of Medicinal Crop Science
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• v.3 no.3
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• pp.251-258
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• 1995

This study was carried out to find optimum concentration of germanium compounds and pH of medium on the induction and growth of callus from A. keiskei and P. ginseng and to intend to increase Ge. absorption by calli while those calli were subculturing on MS medium. Callus from a. keiskei was rarely induced under light condition. Under dark condition, callus in­duction from A. keiskei was good up to 5ppm, retarded at 50ppm of $GeO_2$, or C. E. Ge. O., and rarely done at 100 ppm of $GeO_2$ but was somewhat well at 100 ppm of C. E. Ge. O. The induction and growth of callus was good in order of pH 5. 7 > pH 5. 4 > pH 6. 0 Under light condition, the growth of callus induced from P. ginseng was poor at $1{\sim}10\;ppm$ of $GeO_2$, or C. E. Ge. O., but shooting from callus occurred frequently. Under dark condtion, the growth of callus from A. keiskei was good up to 5 ppm of $GeO_2$, or C. E. Ge. O. and was rarely done at 50 ppm of $GeO_2$, but was somewhat well even at 100 ppm of C. E. Ge. O. Shooting from callus occurred frequently in a. keiskei, especially at pH 5.7. The growth of callus from P. ginseng was poor at 10 ppm of $GeO_2$, or 50 ppm of C. E. Ge. O. Under dark condition, the amount of Ge absorption by callus induced from A. keiskei was much high­er than that from P. ginseng. The amount of Ge. absorption by callus treated with $GeO_2$, was higher than that treated with C. E. Ge. O.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.