• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1229-1231
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• 1997

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1060-1068
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• 1994

Stable zirconia sol was prepared from zirconium butoxide Zr(OC4O9)4 as a precursor and ethylacetoacetate(EAcAc) or diethylene glycol(DEG) as a chelating agent under ambient agent under ambient atmosphere by Sol-Gel process. The sythesized sol was coated on 304 stainless steel substrate by dip coating, thereafter zirconia film could be obtained by heat-treatment at $600^{\circ}C$. The characteristics of coating film were determined by FT-IR, XRD, and ellipsometion peak represented Zr-O-Zr bonding of tetragonal phase was shown at 470cm-1. Crystallization of zirconia gel and film from amorphous state to tetragonal phase started at 40$0^{\circ}C$, and then transformed into monoclinic phase around $700^{\circ}C$. Zirconia film coated on 304 stainless steel substrate showed relatively low porosity of 16% when it was coated with 0.4M zirconia sol and thereafter heat-treated at 80$0^{\circ}C$ and the film was densified continuously up to 90$0^{\circ}C$. The zirconia film of 10 nm thick acted as a protective layer against oxidation up to $700^{\circ}C$.

• Journal of Korean Society of Water and Wastewater
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• v.13 no.3
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• pp.101-106
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• 1999

This research aims to compare immobilized catalysts prepared by various methods and determine suitable $TiO_2$ catalyst for water purification. Sol-gel method by Anderson and powder coation method by Tanaka ate famous in the methods to immobilize catalyst. Therefore, the $TiO_2$ catalyst for this research was prepared by sol-gel method and powder coating method. Its structure was tested by X-ray diffractometer (XRD), Scanning electron microseope (SEM). Durability of a catalyst-support couple in an solution was investigated. too. Experimental results were summarized as following; i) Optimum ratio of Ti : $H_2O$ : $H^+$ to obtain stable sol was 1 : 10 : 0.1 and the XRD patterns of $TiO_2$ film immobilized by sol-gel method which were fired at $700^{\circ}C$ showed that the catalyst had an anatase structure. ii) The particle size of $TiO_2$ prepared by sol-gel method was less than $5{\mu}$, but it was observed that coated side was not unifiom. iii) Sol-gel method was very effective to obtain $TiO_2$ catalyst of thin film, but spreadability and durability of a catalyst-support couple in a solution were than $TiO_2$ film immobilized by powder coating method. iv) The particle size of $TiO_2$ immobilized by powder coating method was a little larger than it prepared by sol-gel method, but spreadability and uniformity of $TiO_2$ film and durability of a catalyst-support couple in a solution were better than it immobilized by sol-gel method.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.17-21
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• 2006

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using aminoalkoxysilanes. The coating layers were characterized by FT-IR and SEM. The oxygen permeability coefficients of coating films were measured by variable volume method, and then the influences of solvent ratio in sol and film drying temperature on the oxygen barrier properties were investigated. The aminoalkoxysilane coating films exhibited much higher oxygen barrier properties than PET film. The oxygen permeability coefficient of the film coated with each of APTEOS and APTMOS was measured to be $2.96{\times}10^{-6}$ and $3.05{\times}10^{-5}\;GPU$, respectively, while that of PET film was $1.16{\times}10^{-4}\;GPU$.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4093-4097
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• 2012

We introduced a new UV-cured resin polymer gel as an electrolyte for dye-sensitized solar cells (DSSCs) that is cured with UV irradiation to form a thin film of UV-cured resin polymer gel in the cells. The gel film was characterized and its potential for use as an electrolyte in DSSCs was investigated. This new UV-cured resin polymer gel was successfully applied as a gel polymer electrolyte in DSSCs overcoming the problems associated with the liquid electrolytes in typical DSSCs. The effect of ${\gamma}$-butylrolactone (GBL) on the long-term stability and photovoltaic performance in DSSCs using this UV-cured resin polymer gel electrolyte was also investigated. The results of the energy conversion efficiency, ionic conductivity and Raman spectra of the UV-cured resin polymer gel electrolyte with the addition of 6 wt % GBL to the UV-cured resin polymer electrolyte showed good long-term stability and photovoltaic performance for the DSSCs with the UV-cured polymer gel electrolyte.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.385-392
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• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.49-55
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• 2006

The submicron $YBa_2Cu_3O_x$ powder was prepared by the sol-gel method. The particle size is distributed from 0.2 to 1.0 ${\mu}m$, which benefits to eliminate the micro-cracks formed in the $YBa_2Cu_3O_x$ films deposited by electrophoresis. The powder was single phase of $YBa_2Cu_3O_x$ examined by X-ray diffraction. In the sol-gel process the citrate gel was formed from citric acid and nitrate solution of $Y_2O_3$, $Ba(NO_3)_2$ and CuO. When pH values were adjusted to 6.4-6.7, $Ba(NO_3)_2$ could be dissolved in the citrate solution completely. Appropriate evaporative temperature of the sol-gel formation is discussed. Acetone is used as electrophoreticsolution, in which some water and iodine (0.2 g/1) and polyethylene glycol (2 vol. %) are added. The concentrations of $YBa_2Cu_3O_x$ powders is 20g/l. The thickness of deposited film could be more than 50 ${\mu}m$ in 3 minutes of depositing time. The most EPD films could be 90K zero resistance and the Jc values were over 1000A/cm2 (0 H, 77 K).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.262-266
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• 2010

The Calcium-aluminate electride thin films on the quartz substrates was coated by sol-gel process. The crystallization of the C12A7 thin film was observed at $800^{\circ}C$ and high density C12A7 thin film was achieved on heat treatment at $1,200^{\circ}C$ for 1 hour. The reduction heat treatment of C12A7 thin film could be converted from insulator to conductor and the electrical conductivity was 120 S/cm in the C12A7 thin film heat treated at $1,200^{\circ}C$ with $H_2$ gas for 48 hours.