• Korean Journal of Crystallography
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• v.9 no.1
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• pp.30-38
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• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.1-7
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• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.713-721
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• 1997

Molecular dynamic (MD) simulations with new interatomic potential function including the covalent bond were performed on the phase transition of $\alpha$-quartz-type GeO2 under high pressure. The optimized crystal structure and the pressure dependence of the lattice constant showed higher reproducibility than the previous models and were in very good agreement with the experimental data. A phase transition of $\alpha$-quartz and $\alpha$-quartz-type GeO2 by simulation was found approximately 24 GPa and 6-7 GPa, respectively. This phase transition involved an abrupt volume shrinkage and showed 4-6 coordination mixed structure with the increasing in the coordination number of cation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.529-532
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• 2002

We experimentally investigate the evolution of nanosecond Stokes pulses in a single-pass Raman laser pumped by a Q-switched Nd: YAG laser at 1064 nm. As a Raman medium, a GeO$_2$-doped graded-index multimode fiber of 220m long is used. We demonstrate that efficient generation of several Stokes components with 1.5-2.7 nanosecond pulsewidth is obtained by varying the input pump energy.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.99-104
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• 1992

The permeability vs. temperature curve, the loss factor and the microstructure of a commercial Mn-Zn ferrites were investigated by X-ray diffractometer, SEM and LCR meter, where the additives, such as $SnO_{2}$ and $GeO_{2}$, were added to the main composition. Their wt% were 0.05, 0.3 and 1.0, respectively. When the content of additives increased, the SPM (Secondary Peak Maximum) of the permeability moved from $80^{\circ}C$ to below the room temperature. This movement, without the significant change of the microstructure, is because Sn and Ge, having the different ionic radius, were soluble in the matrix. There was no variation of the permeability with the frequency up to 100 kHz. And the loss factor showed the maximum value at 10 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.165-169
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• 1999

The thermal diffusivity of lead germanate single crystal was measured from room temperture up to the $200^{\circ}C$ by heating method. The thermal diffusivities were measured as k=0.0117, 0.0105, and $0.0112cm^2/^{\circ}C$ at $30^{\circ}C$, $177^{\circ}C$, and $180^{\circ}C$, respectively. It is identified that the heat capacity of the lead germanate single crystal is maximum at $177^{\circ}C$, and this point is phase transition temperature of $Pb_5Ge_3O_{11}$ single crystal.

• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.221-225
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• 2007

The possibility of improving amplification characteristics and lowering the melting point of bismuth-doped aluminosilicate glass as a new amplification material, which has broadband near-infrared emission at 1300 nm regions, was investigated. Spectroscopic analysis of bismuth-doped aluminosilicate glass shows that the addition of an alkali metal oxide, $Li_{2}O$ increases FWHM of fluorescence spectrum but decreases fluorescence intensity, while $GeO_{2}$ composition increases both FWHM of fluorescence spectrum and fluorescence intensity. Also, excellent optical amplification gain characteristics in a $GeO_{2}$-added sample were observed.

• Journal of the Korean GEO-environmental Society
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• v.15 no.1
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• pp.63-68
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• 2014

In this study, it was found that determined the photocatalytic degradation of antibiotics (lincomycin, LM) with various catalyst composite of titanium dioxide ($TiO_2$), hydroxyapatite (HAP) and germanium (Ge) under UV-A irradiation. At first, various type of complex catalysts were investigated to compare the enhanced photocatalytic potential. It was observed that in order to obtain the removal efficiencies were $TiO_2/HAP/Ge$ > $TiO_2/Ge$ > $TiO_2/HAP$. The composition of $TiO_2/HAP/Ge$ using a statistical approach based on mixture analysis design, one of response surface method was investigated. The independent variables of $TiO_2$ ($X_1$), HAP ($X_2$) and Ge ($X_3$) which consisted of 6 condition in each variables was set up to determine the effects on LM ($Y_1$) and TOC ($Y_2$) degradation. Regression analysis on analysis of variance (ANOVA) showed significant p-value (p < 0.05) and high coefficients for determination value ($R^2$ of $Y_1=99.28%$ and $R^2$ of $Y_2=98.91%$). Contour plot and response curve showed that the effects of $TiO_2/HAP/Ge$ composition for LM degradation under UV-A irradiation. And the estimated optimal composition for TOC removal ($Y_2$) were $X_1=0.6913$, $X_2=0.2313$ and $X_3=0.0756$ by coded value. By comparison with actual applications, the experimental results were found to be in good agreement with the model's predictions, with mean results for LM and TOC removal of 99.2% and 49.3%, respectively.