• 한국전자현미경학회:학술대회논문집
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• 1997.05a
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• pp.71-76
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• 1997

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.41 no.6
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• pp.729-735
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• 1996

This study was carried out to investigate the effect of Germaniwn(Ge) treatment in the culture media on the Ge absorption by the callus induced from brown rice cv. Dongjinbyeo. MS medium was more effective on the growth ratio of callus and the content of Ge and some inorganic elements except K in callus than N$_{6}$ medium. The more Ge treatment in the N$_{6}$ or MS medium, the more Ge absorption by the callus, but the growth ratio of callus and the content of Ca, Mg, and K in callus were decreased. The content of Fe, Mn, Zn, and Cu was increased under treatment up to 100～200mg /$\ell$ Ge, but tended to be decreased under treatment more than that of Ge concentration. Under treatment less than 150mg /$\ell$ Ge, GeO$_2$(inorganic Ge) was more effective on the Ge absorption by callus than Ge-132(organic Ge), but Ge-132 was more effective on the Ge ab-sorption by callus and the activity of callus in case of treatment more than 150mg /$\ell$ Ge. The lower pH of culture medium, the higher Ge content in the callus. When callus was cultured on medium supplemented with Ge and 0.1～1.0mM of citric acid or myo-inositol, content of Ge and some inorganic elements in callus, as well as growth and dry weight of callus, were tend to increase in comparison to control, but myo-inositol was more effective on them than citric acid.cid.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.191-194
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• 2000

Bi/sub 12/SiO/sub 20/, Bi/sub 12/GeO/sub 20/ and Bi/sub 12/O/sub 20/ compounds with the sillenite crystal structure were synthesized and sintered into the dense ceramic bodies. An analyses of the microwave dielectric properties of the Si, Ge and Ti sillenites showed a permittivity (e) of ∼40 and a negative temperature coefficient of the resonant frequency for all analogues (from -20 to -40 ppm/K). The Qxf value of the Si and Ge sillenites was measured to be ∼8.000 GHz. The Ti analogue shows a significantly lower Qxf value(∼2.500 GHz) and is sensitive to the heat-treatment conditions. By increasing the sintering temperature the size of the grains increases, which correlates with an increase in the Qxf value.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.197-201
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• 1998

Ge quantum dots in $SiO_2$ thin films were prepared by r.f. magnetron co-sputtering using a Ge, $SiO_2$ composite target. The size of quantum dots was modulated by controlling of substrate temperature during depositing and annealing of samples deposited at certain substrate temperature. A series of work was done on the influence of preparing parameters on the growth of quantum dots, and a discussion on the formation and growth of quantum dots under different preparation parameters is given.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.77-81
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• 2000

Silica glass films to utilize optical waveguides was fabricated by Aerosol Flame Deposition(AFD) method. As the amount of B2O3 increased in the sol solution of (92-x)SiO2-xB2O3-8P2O5, the thermophoretic deposition rate onto Si substrate was markedly lowered due to vaporizing out of B2O3 and P2O5 during the vaporization and reaction of the aerosol in the flame. GeO2 was added to 62SiO2-30B2O3-8P2O5 in order to control easily the refractive index of glass films. As the amount of GeO2 increased from 2 to 12 wt%, its refractive index increased from 1.4633 up to 1.4716.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.367-367
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• 2010

The adsorption configurations of S-proline on Ge(100) were studied using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We identified three adsorption structures of S-proline on Ge(100) through analysis of the STM images, DFT calculations, and HRCLPES results: (i) an 'intrarow O - H dissociated and N dative bonded structure', (ii) an 'O - H dissociation structure', and (iii) an 'N dative bonded structure'. Moreover, because adsorption through the N atom of S-proline produces a new chiral center due to symmetry reduction by N dative bonding, the adsorption configurations have either (R,S) or (S,S) chirality, yielding an (R,S)-'intrarow O - H dissociated and N dative bonded structure' and an (R,S)-'N dative bonded structure', with a preference for reaction at the Re face. This work presents a novel method for generating stereoselective attachment using S-proline molecules adsorbed onto a Ge(100) surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Proceedings of the Korea Society of Poultry Science Conference
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• 2002.11a
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• pp.133-135
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• 2002

This study was designed to investigate the effects of dietary isoflavones(IF) on bone ash content in young chicks. Daidzein(DE) and genistein(GE), aglycone forms of IF, were added to purified-type basal diet containing calcium at 50% of NRC requirement. The two IF at two different levels(1.0 and 2.0 mM) were added to the diets prepared to be very low in IF using soy protein concentrate(SPC) as the only source of protein. The diets Including control with no IF-added were fed for three weeks. One hundred, Hy-Line Brown, day-old male chicks were divided into five dietary groups with four replicates and five chicks per replication. General performances of the chicks were not affected by the dietary treatments. Serum alkaline phosphatase(ALP) activities, an indicator for bone formation, of the birds fed DE diet were lowered compared to those fed GE and control diets. However, the levels of IF did not show any differences in the responses. Bone ash o/o of birds fed the IF diets were significantly increased compared to that of control group (p〈0.05), and, however, not affected by levels of IF in diets. Bone breaking strength measured with an Instron appeared to be equivalent among the birds of all treatments. The observations that equivalences in bone ash o/o and bone breaking strength even with lowered activity of ALP by DE ingestion compared to GE suggest a necessity of further investigation.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.