• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1069-1072
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• 2003

Germane-sillicide phase formation on S $i_{0.25}$G $e_{0.75}$ with Ni 100$\square$, Co 10$\square$/Ni 100$\square$ and Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer was studied by sheet resistance and Field Emission Scanning Electron Microscopy(FESEM). Thermal stability of nickel germane-silicide is found to be improved by sputtering Ni/Co/Ni on the SiGe. After annealing at 600, 650, $700^{\circ}C$, 30min., the nickel germane-silicide formed by Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer achieved a sheet resistance less than 17ohms/sq.(almost the same to the value before furnace annealing for 30min.) , while the process of the other two ways result in high sheet resistance and even sheet resistance fail due to Ge segregation.ion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.107-116
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• 2012

In this paper, the trade-off related to bandwidth of high-speed common-mode logic frequency divider is analyzed in detail. A method to optimize the operating frequency, band-width as well as power consumption is proposed. This method is based on bipolar device characteristics, whereby a negative resistance model can be used to estimate the optimal normalized upper frequency and lower frequency of frequency dividers under different conditions, which is conventionally ignored in literatures. This method provides a simple but efficient procedure in designing high performance frequency dividers for different applications. To verify the proposed method, a static divide-by-2 at millimeter wave ranges is implemented in 180 nm SiGe technology. Measurement results of the divider demonstrate significant improvement in the figure of merit as compared with literatures.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.775-778
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• 2000

Single point diamond turning technique fur optical crystals is reported in this paper. The main factors influencing the machined surface quality are discovered and regularities of machining process are drawn. Optical crystals have found more and more important applications in the field of modern optics. Optical crystals are mostly brittle materials of poor machinability. The traditional machining method is polishing which has many shortcomings such as low production efficiency, poor ability to be automatically controlled and edge effect of the workpiece. SPDT has been widely used in manufacturing optical reflectors of non-ferrous metals such as aluminum and copper which are easy to be machined for their proper ductility. But optical crystals being discussed here are characterized by their high brittleness which makes it difficult to obtain high quality optical surfaces on them. The purpose of cur research is to find the optimum machining conditions for ductile cutting of optical crystals and apply the SPDT technique to the manufacturing of ultra precision optical components of brittle materials. As a result, the cutting force is steady, the cutting force range is 0.05-0.08N. The surface roughness is good when spindle is above 1400rpm. and feed rate is small. The influence of depth of cut is very small.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.36-43
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• 1997

FECAPS(ferroelectric capacitors) have been fabricated by RF magnetron sputtering deposition of 3000$\AA$ PZT thin films on the Pt/Ti/$SiO_2$/Si substrates and post-annealing with the temperature of $550^{\circ}C$~$650^{\circ}C$ for 10 sec~50 sec in a RTA system. The electrical characteristics of the fabricated capacitors showed the highest dielectric constant and remanent polarization[${\varepsilon_r(1kHz)$=690, $2P_r$(-5V~5V sweep)=22$\mu$C/$ \textrm{cm}^2$] in the samples annealed at $650^{\circ}C$ for 30 sec, while the lowest tangent loss and leakage current [$tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$]in the samples annealed at $600^{\circ}C$ for 30 sec.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.253-260
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• 2012

In nowadays, the infrared optics is frequently employed to various fields such as military, aerospace, industry and medical. To develop the infrared optics, special glasses which can transmit infrared wave are required. Ge(Germanium), Si(silicon), and fluoride glasses are typically used for material of the infrared optics. Compared with Ge and Si glasses, fluoride glasses have high transmittance in infrared wavelength range. Additionally, UV(ultraviolet) and visible light can be transmitted through fluoride glasses. There characteristics of fluoride glasses makes it possible to evaluate optical performance with generally used visible testing equipment. In this paper, we used design of experiment to find ultra precision machining characteristic of Ge and fluoride glasses and optimized machining process to obtain required form accuracy of PV(Peak to Valley) $0.2\;{\mu}m$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.831-832
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• 2006

Solid-state processing via the bulk mechanical alloying enables us to directly fabricate $Mg_2X$ semi-conductive material performs. Precise control of chemical composition leads to investigation on the dilution and enrichment of X in $Mg_2X$. Two types of solid-state reactivity are introduced: e.g. synthesis of $Mg_2Si$ from elemental mixture Mg-Si is nucleation-controlled process while synthesis of $Mg_2Sn$ from Mg-Sn, diffusion-controlled process. Thermoelectricity of these $Mg_2X$ is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• Food Science of Animal Resources
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• v.35 no.6
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• pp.721-730
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• 2015

The objective of this study was to examine the effect of ginger extract (GE) combined with citric acid on the tenderness of duck breast muscles. Total six marinades were prepared with the combination of citric acid (0 and 0.3 M citric acid) and GE (0, 15, and 30%). Each marinade was sprayed on the surface of duck breasts (15 mL/100 g), and the samples were marinated for 72 h at 4℃. The pH and proteolytic activity of marinades were determined. After 72 h of marination, Warner Bratzler shear force (WBSF), myofibrillar fragmentation index (MFI), pH, cooking loss, moisture content, sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE), and protein solubility were evaluated. There was no significant (p>0.05) difference in moisture content or cooking loss among all samples. However, GE marination resulted in a significant (p<0.05) decrease in WBSF but a significant (p<0.05) increase in pH and MFI. In addition, total protein and myofibrillar protein solubility of GE-marinated duck breast muscles in both WOC (without citric acid) and WC (with citric acid) conditions were significantly (p<0.05) increased compared to non-GE-marinated duck breast muscles. SDS-PAGE showed an increase of protein degradation (MHC and actin) in WC condition compared to WOC condition. There was a marked actin reduction in GE-treated samples in WC. The tenderization effect of GE combined with citric acid may be attributed to various mechanisms such as increased MFI and myofibrillar protein solubility.