• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1803-1805
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• 2000

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 춘계학술대회
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• pp.172-175
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• 2004

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

• 대한전자공학회논문지SD
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• 제42권9호
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• pp.1-8
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• 2005

최근 Mobile용 RF ICs 적용을 위한 RF CMOS 기술과 함께 핵심 기술로 SiGe Heterojunction Bipolar Transistor (HBT) 소자 개발의 중요성이 증대되고 있다. 본 논문은 현재 5GHz 동작 수준의 RF제품에서 주로 사용되는 기술인 $0.35\{mu}m$ 설계 Rule을 적용하여 $f_{max}$ 50GHz에서 동작하는 SiGe BiCMOS 기술 개발에 대한 내용을 논의한다. 본 SiGe HBT에 사용하는 에피막 성장 기술은 Trapezoidal Ge base profile 및 non-selective 방식이고, 에미터 RTA 조건 및 SiGe HBT base에 대한 Vertical Profile 최적화를 수행하였다. hFE 100, $f_{T}\;45GHz,\;NF_{min}\;0.8dB$ 수준으로 우수한 특성 및 기술 경쟁력을 갖는 SiGe BiCMOS 공정 개발 및 양산 기술을 확보하였다. 또한, 기존의 0.35um설계 Rule공정 target떼 부합되는 CMOS소자를 포함시켰으며, RF용 Passive소자로 높은 Q값을 갖는 MIM capacitor(1pF, Q>80), Inductor(2nH $Q\~$l2.5)를 제공하였다

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3690-3694
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• 2013

The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• 대한전자공학회논문지
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• 제26권6호
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• pp.63-70
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• 1989

액체금속이온원으로 부터 발생한 AuGe 이온빔을 GaAs기판에 주입시킨 후 이 시료의 표면성분과 구조를 AES(Auger electron spectroscopy), RHEED(reflection high energy electron diffraction), SEM(scanning electron microscopy) and EPMA(electron probe microanalysis)등으로 조사하였으며 AES depth profile 실험결과를 이체충돌에 의한 Monte Carlo simulation과 비교하였다. AuGe 이온이 주입된 시료를 AES, EPMA로 측정한 결과 As의 preferential스피터링이 나타났으며 300$^{circ}$C로 열처리하면 Ga과 outdiffusion되었다. 또한 측정한 Au와 Ge의 depth profile은 이체충돌에 의한 Monte Carlo simulation의 결과와 잘 일치하였다.

• 전자공학회논문지A
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• 제28A권5호
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• pp.380-386
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• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• 한국진공학회지
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• 제14권1호
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• pp.29-34
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• 2005

실리콘-게르마늄 바이시모스(SiGe BiCMOS) 소자 제작시 발생하는 실리콘-게르마늄 이종접합 바이폴라 트랜지스터(SiGe HBT) 열화 현상에 대하여 고찰하였다. 독립적으로 제작된 소자에 비해 SiGe BiCMOS 공정에서의 SiGe HBT소자는 얼리 전압(Early voltage), 콜렉터-에미터 항복전압 및 전류이득등의 DC특성이 열화되고 상당한 크기의 베이스 누설전류가 존재한다는 것을 알 수 있었다. 또한 AC 특성인 차단주파수(f/sub T/) 및 최대 진동주파수(f/sub max/)도 1/2이하로 현저하게 저하되는 것을 확인하였다. 이는 고온의 소오스-드레인 열처리에 의한 붕소의 농도분포 변화가 에미터-베이스 및 콜렉터-베이스 접합 위치에 변화를 주고, 결국 실리콘-게르마늄 내에서의 접합 형성이 이루어지지 않아 전류 이득이 감소하고 기생 장벽이 형성되어서 발생한 현상이다.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.