• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.1292-1294
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• 1996

The general output circuit for PWM output is pushpull using a complimentary MOSFET. The gate driver coupled directly at gate can switch easy upto a high frequency. However, a high reverse recovery current and parastic components make a oscillation output. This paper analyses this phenomenon and proposes a novel output circuit preventing the oscillation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.11-12
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• 2009

In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1011-1014
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• 2004

In this paper, we present a new DC-DC converter for gate driver circuit in low temperature poly-Si TFT technology. It is composed of a newly developed charge pump circuit and a regulator circuit. When the input voltage is 5V, the efficiency of a positive charge pump used in the DC-DC converter and that of a negative charge pump is 69.0% and 57.1%, respectively. The output voltage of DC-DC converter varies 200mV when the target voltages of DC-DC converter are 9V, -6V and the threshold voltage of TFTs varies ${\pm}$ 0.5V.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.3
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• pp.25-30
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• 2014

This paper describes the design of gate driver circuits in distributed maximum power point tracking(DMPPT) controller for photovoltaic system. For the effective DMPPT control in the existence of shadowed modules, high voltage gate driver is applied to drive the DC-DC converter in each module. Some analog blocks such as 12-b ADC, PLL, and gate driver are integrated in the SoC for DMPPT. To reduce the power consumption and to avoid the high voltage damage, a short pulse generator is added in the high side level shifter. The circuit was implemented with BCDMOS 0.35um technology and can support the maximum current of 2A and the maximum voltage of 50V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.528-531
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• 2007

This paper presents development of a 4-inch WVCA OCB (Optical Compensated Bend)-mode display panel. The developed panel has a built-in circuit of the LTPS (low temperature poly-Si)-integrated gate driver circuit with the function of black data insertion. The function of black data insertion makes it possible to realize rapid response time of 4ms and wide viewing angle of $160^{\circ}$. We also applied the RGBW pixel structure for the brighter image with relatively low power consumption. The developed panel showed improved optical efficiency and driving capability of stable image quality for OCB mode. We developed high efficiency OCB-mode panel with built-in integrated gate driver circuit using LTPS on panel without any external driver IC.

• Journal of IKEEE
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• v.24 no.1
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• pp.132-139
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• 2020

The ionizer module used in this air cleaner supplies high voltages of 3.5KV / -4KV to the discharge electrode HV+ / HV- using a winding transformer to generate positive and negative ions by electric field radiation of carbon fiber brush. The ionizer module circuit using the existing MCU has the disadvantage of large PCB size and expensive price, and the gate driver chip using the existing ring oscillator has oscillation period sensitive to PVT (Process-Voltage-Temperature) fluctuation and there is risk of fire or electric shock because there is no fault detection function by short circuit of HV+ and GND as well as HV- and GND. Therefore, in this paper, even though PVT fluctuates, by using 7-bit binary up counter, HV+ voltage reaches the target voltage by adjusting oscillation period. And an HV+ short fault detection circuit for detecting a short circuit between HV+ and GND, an HV- short fault detection circuit for detecting a short circuit between HV- and GND, and an OVP (Over-Voltage Protection) for detecting that HV+ rises above an overvoltage are newly proposed.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.732-741
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• 2018

In order to maximize the usable capacity of a BMS (battery management system) that uses several battery cells connected in series, a cell balancing technique that equips each cell with the same voltage is needed. In the active cell balancing circuit using a multi-winding transformer, a balancing circuit that transfers energy directly to the cell (cell-to-cell) is composed of a PMOS switch and a gate driving chip for driving the NMOS switch. The TLP2748 photocoupler and the TLP2745 photocoupler are required, resulting in increased cost and reduced integration. In this paper, instead of driving PMOS and NMOS switching devices by using photocoupler, we proposed 70V BCD process based PMOS gate driving circuit, NMOS gate driving circuit, PMOS gate driving circuit and NMOS gate driving circuit with improved switching time. ${\Delta}t$ of the PMOS gate drive switch with improved switching time was 8.9 ns and ${\Delta}t$ of the NMOS gate drive switch was 9.9 ns.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1271-1274
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• 2006

Integrated a-Si:H gate driver with high reliability has been designed and simulated. The proposed a-S:H gate driver has only one reset transistor under AC driving for P and output node. These reset transistors show much less degradation than those under DC driving. The simulation results show that the lifetime and response time are improved significantly compared with those of the prior circuit.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit