• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.985-987
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• 1992

The three-phase full(6-pulse) bridge controlled rectifier is one of the most widely used types of solid-state converters in DC drive applications for higher performance. In most of the previous designs gate control circuits of the converter have been designed with analog method, whitch can be easily affected by noise. In this study microprocessor and pheripal LSIs are used for eliminating these problems and successful results have been obtained.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.3
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• pp.37-44
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• 1998

This paper compared to the operation performance and efficiency of an interleaved active clap ZVS forward converter and an interleaved ZVS half-bridge converter in distributed power system. The design for the current-mode control circuit of an interleaved active clamp ZVS forward converter is presented. To simplify the gate drive circuits, N-P MOSFETs coupled active clamp method is proposed. An efficiency about 90% for the 50∼100% load range is achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.93-96
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• 1993

BiCMOS technology, which combines CMOS and bipolar technology, offers the possibility of achieving both very high density and high performance. In this paper, the characteristics of BiCMOS and CMOS circuits, especilly the delay time is studied. BiCMOS inverter, which has high drive ability because of bipolar transistor, drives high load capacitance and has low-power characteristics because the current flows only during switching transient just like the CMOS gate. BiCMOS inverter has the less dependence on load capacitance than CMOS inverter. SPICE that has been used for electronic circuit analysis is chosen to simulate these circuits and the characteristics is discussed.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.7
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• pp.1172-1177
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• 2004

This paper describes a output power control of magnetron for microwave oven. Magnetron is used extensively in household microwave oven and industrial microwave heating devices it is operated by 3000[V]～5000[V] dc high voltage. Power supply for driving magnetron is consisted of a bridge rectifier. HB(half bridge) inverter, full wave rectifier and gate drive circuit. In proposed system. we confirm that line input power can be controlled extensively and linearly to 24.56[%] by change of duty ratio of inverter through a experiment.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.112-113
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• 2013

본 논문에서는 부트스트랩 게이트 드라이브 회로가 적용된 3-레벨 NPC 인버터의 전동기 저속 운전에 적용하기 위한 PWM 스위칭 전략을 제안한다. 3-레벨 NPC 인버터를 이용하여 전동기를 제어할 경우, 일반적으로 구현의 편리성 때문에 CBPWM이 주로 사용된다. CBPWM 중 Unipolar 방법이 주로 사용되지만 부트스트랩 회로를 적용한 3-레벨 NPC 인버터의 전동기 저속 운전 시 부트스트랩 캐패시터 방전에 의한 전압 감소 크기가 증가한다. 캐패시터 전압이 정상적인 인버터 동작을 위한 한계 전압 이하로 감소하면 정상적인 제어는 불가능하다. 따라서 본 논문에서는 부트스트랩 회로가 적용된 3-레벨 NPC 인버터의 전동기 저속 운전에 적용하기 위한 PWM 스위칭 전략에 대해 제안 하였으며 시뮬레이션을 통하여 그 타당성을 증명하였다.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.221-223
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• 2020

반도체 기반 고전압 펄스 발생장치에 적용 가능한 고전압 스위치는 주로 수 kV 정격의 반도체 스위치를 직렬로 스태킹하여 구성되며, 이때 각 스위치 소자에는 절연과 동기화된 각각의 게이트 신호가 인가되어야 한다. 본 논문에서는 짧은 펄스 폭의 온, 오프 게이트 펄스와, 단일 턴의 고전압 전선을 일차측으로 갖는 게이트 변압기를 통해 직렬로 구성된 반도체 스위치 스택 기반의 펄스 모듈레이터에 적용 가능한 간단한 구조의 게이트 구동회로가 설계되었다. 각 스위치에 게이트 신호를 전달하기 위해 온, 오프 게이트 펄스를 사용함으로써 게이트 변압기의 포화를 방지할 수 있으며, 이때 각 스위치의 게이트 턴-온, 오프 전압은 변압기 이차측의 제너 다이오드와 스토리지 커패시터를 통해 유지된다. Pspice 시뮬레이션을 통해 12개의 IGBT를 직렬로 구성하여 설계된 구조의 게이트 회로를 적용, 최대 10kV 펄스 출력 조건에서 안정적인 동작을 확인하고 설계를 검증하였으며 1200V 급 IGBT를 사용하여 실제 스위치 스택과 게이트 구동회로 모듈을 1리터 이내의 부피로 고밀도화하여 제작하였다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.2 s.302
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• pp.49-58
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• 2005

A new soft switching three-phase PWM rectifier with simple circuit configuration and high efficiency has been developed. The proposed circuit is a kind of the auxiliary resonant commutated Pole(ARCP)converter The conventional ARCP converter requires three-auxiliary reactors and six-auxiliary switches for the soft switching auxiliary circuit and for these switching elements, a gate drive circuit and a control circuit are required, resulting in high part as a disadvantage. In the main circuit proposed in this paper, the auxiliary soft switching circuit is composed of two-auxiliary reactors, two-auxiliary switches and several diodes. In addition, common use of the PWM control circuit for two-switches will make the control circuit of the auxiliary switches simple. By means of function of the soft switching auxiliary circuit, the main switching element performs zero voltage switching operation and the auxiliary switches perform the zero current switching. In this paper, the circuit configuration and the operational analysis of the proposed circuit are described at first and then, experimental results will be reported. By using a prototype with 5[kW] capacity, the conversion efficiency of maximum $98.8[\%]$ and the power factor of $99[\%]$ or higher were obtained.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.430-433
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• 2003

IGBTS are widely used for the industrial inverters in the mid power range at low voltage (440V$\~$660V) application. Advantageous features of the device are simple gate drive and high speed switching capability. Due to these advantages the application of IGBTS is enlarging into the high power application. However, to increase the power handling capacity at lower input voltage level, the current rating in each bridge arm must be enlarged. Therefore the parallel operation of IGBT devices is essentially needed. This paper describes the feasible parallel structures of the power circuit for the mid & the high power inverters and introduces the important design condition for the parallel operation of IGBT devices. To verify feasibility of the IGBT parallel operation, the feature of several IGBT devices (EUPEC, SEMIKRON's IGBT) are investigated and the power stacks are implemented and tested with these devices. The experimental results show the good characteristics for the parallel operation of IGBTS.