A Study on the Characteristics of BiCMOS and CMOS Inverters

BiCMOS 및 CMOS로 구현된 Inverter에 대한 특성비교

  • 정종척 (고려대학교 전기공학과) ;
  • 이계훈 (고려대학교 전기공학과) ;
  • 우영신 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 1993.11.01

Abstract

BiCMOS technology, which combines CMOS and bipolar technology, offers the possibility of achieving both very high density and high performance. In this paper, the characteristics of BiCMOS and CMOS circuits, especilly the delay time is studied. BiCMOS inverter, which has high drive ability because of bipolar transistor, drives high load capacitance and has low-power characteristics because the current flows only during switching transient just like the CMOS gate. BiCMOS inverter has the less dependence on load capacitance than CMOS inverter. SPICE that has been used for electronic circuit analysis is chosen to simulate these circuits and the characteristics is discussed.

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