• Journal of information and communication convergence engineering
• /
• 제5권1호
• /
• pp.42-44
• /
• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• 전자공학회논문지A
• /
• 제30A권9호
• /
• pp.71-79
• /
• 1993

This paper proposes a new test pattern generation methodology for combinational logic circuits using neural networks based on a modular structure. The CUT (Circuit Under Test) is described in our gate level hardware description language. By conferring neural database, the CUT is compiled to an ATPG (Automatic Test Pattern Generation) neural network. Each logic gate in CUT is represented as a discrete Hopfield network. Such a neual network is called a gate module in this paper. All the gate modules for a CUT form an ATPG neural network by connecting each module through message passing paths by which the states of modules are transferred to their adjacent modules. A fault is injected by setting the activation values of some neurons at given values and by invalidating connections between some gate modules. A test pattern for an injected fault is obtained when all gate modules in the ATPG neural network are stabilized through evolution and mutual interactions. The proposed methodology is efficient for test generation, known to be NP-complete, through its massive paralelism. Some results on combinational logic circuits confirm the feasibility of the proposed methodology.

• 전자공학회논문지A
• /
• 제32A권1호
• /
• pp.185-192
• /
• 1995

In this study, very fine photoresist pattern was examined using the image reversal process. And very fine photoriesist pattern (less than 0.2um) was obtsined by optimizing the exposure and reversal baking condition of photoresist. The produced pattern does not show the loss of thickness, and has a sparp negative edge profile. also, the ion implanted 0.25um T-shaped gate MESFET was fabricated using this resist pattern and the directional evaporation of gate metal. The fabricated MESFET has the maximum transconductance of 302 mS/mm, and the threshold voltage of -1.8V, and the drain saturation current of this MESFET was 191 mA/mm.

• 한국정보통신학회논문지
• /
• 제8권4호
• /
• pp.821-825
• /
• 2004

본 연구는 에치스토퍼를 기존의 방식과 다르게 적용하여 수소화 된 비정질 실리콘 박막 트랜지스터의 제조공정을 단순화하고, 박막 트랜지스터의 게이트와 소오스-드레인간의 기생용량을 줄인다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층 , 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si：H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si：H 층을 식각하고, 남아있는 NPR층을 제거한다. 그 위에 Cr층을 증착한 후 패터닝하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 이렇게 제조하면 기존의 박막 트랜지스터에 비하여 특성은 같고, 제조공정은 줄어들며, 또한 게이트와 소오스-드레인간의 기생용량이 줄어들어 동작속도를 개선시킬 수 있다.

• 한국통신학회논문지
• /
• 제24권12A호
• /
• pp.2008-2014
• /
• 1999

IDDQ 테스팅은 CMOS 회로에서 발생되는 여러 종류의 물리적 결함을 효율적으로 검출하는 테스팅 방식이다. 본 논문에서는 테스트 대상회로의 게이트내부에서 발생하는 단락을 고려하여, 이 결함을 검출하기 위한 테스트 패턴을 찾아 주는 IDDQ 테스트 패턴 발생기를 구현하였다. 테스트 패턴을 생성하기 위해 게이트 종류별로 모든 내부 단락을 검출하는 게이트 테스트 벡터를 찾아냈다. 그리고 10,000개의 무작위패턴을 테스트대상 회로에 인가하여 각 게이트에서 요구되는 테스트 벡터를 발생시켜 주면 유용한 테스트 패턴으로 저장한다. 입력된 패턴들이 모든 게이트 테스트 벡터를 발생시켜 주거나 10,000개의 패턴을 모두 인가했을 경우 테스트 패턴 발생 절차를 종료한다. ISCAS '85 벤처마크 회로에 대한 실험을 통하여 기존의 다른 방식보다 성능이 우수함을 보여주었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1597-1599
• /
• 2007

In TFT-LCD, mura is a defect which degrades the display quality. The resistance difference between gate lines is the main cause of H-Block mura. Two methods could eliminate this defect. A thinner gate layer or gate fan-out pattern decrease mura level. H-Block mura has been reduced after implementing the new schemes.

• Journal of Biosystems Engineering
• /
• 제34권2호
• /
• pp.95-105
• /
• 2009

A method was proposed which employed control of the drop location of fertilizer particles on a spinner disc to optimize the spread pattern uniformity. The system contained an optical sensor as a feedback mechanism, which measured discharge velocity and location, as well as particle diameters to predict a spread pattern of a single disc. Simulations showed that the feed gate adaptation algorithm produced high quality patterns for any given application rate in the dual disc spreader. The performance of the feed gate control method was assessed using data collected from a Sulky spinner disc spreader. The results showed that it was always possible to find a spread pattern with an acceptable CV lower than 15%, even though the spread pattern was obtained from a rudimentary flat disc with straight radial vanes. A mathematical optimization method was used to find the initial parameter settings for a specially designed experimental spreading arrangement, which included the feed gate control system, for a given flow rate and swath width. Several experiments were carried out to investigate the relationship between the gate opening and flow rate, disc speed and particle velocity, as well as disc speed and predicted landing location of fertilizer particles. All relationships found were highly linear ($r^2$ > 0.96), which showed that the time-of-flight sensor was well suited as a feedback sensor in the rate and uniformity controlled spreading system.

• 전기전자학회논문지
• /
• 제3권1호
• /
• pp.118-125
• /
• 1999

게이트 아래의 기판과 쏘오스/드레인의 접합부분 사이의 길이로 정의되는 LDD MOSFET의 metallurgical 채널 길이를 커패시턴스 측정을 이용하여 결정할 수 있는 방법을 제안하였다. 전체의 게이트 면적이 동일한 평판 모양과 손가락 모양의 LDD MOSFET 게이트 테스트 패턴의 커패시턴스를 측정하였다. 각 테스트 패턴의 쏘오스/드레인과 기판의 전압을 접지시키고 게이트의 전압을 변화시키면서 커페시턴스를 측정하였다. 두 테스트 패턴의 측정치의 차이를 그려서 최대점이 나타나는 점의 값를 간단한 수식에 대입하여 metallurgical 채널 길이를 구하였다. 이차원적 소자 시뮬레이터를 사용하여 수치해석적 모의 실험을 함으로써 제안한 방법을 증명하였다.

• 전자공학회논문지A
• /
• 제33A권3호
• /
• pp.176-186
• /
• 1996

As the density of VLSI increases, the conventional logic testing is not sufficient to completely detect the new faults generated in design and fabrication processing. Recently, IDDQ testing becomes very attractive since it can overcome the limitations of logic testing. In this paper, G-ATPG (gyeongsang automatic test pattern genrator) is designed which is able to be adapted to IDDQ testing for combinational CMOS VLSI. In G-ATPG, stuck-at, transistor stuck-on, GOS (gate oxide short)or bridging faults which can occur within priitive gate or XOR is modelled to primitive fault patterns and the concept of a fault-sensitizing gate is used to simulate only gates that need to sensitize the faulty gate because IDDQ test does not require the process of fault propagation. Primitive fault patterns are graded to reduce CPU time for the gates in a circuit whenever a test pattern is generated. the simulation results in bench mark circuits show that CPU time and fault coverage are enhanced more than the conventional ATPG using IDDQ test.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2018년도 전력전자학술대회
• /
• pp.108-110
• /
• 2018

This paper proposes shortcircuit fault protection method in a synchronous buck converter using the PCB pattern Rogowski coil. The PCB pattern Rogowski coils are embedded in the gate driver to measure the device currents of the top and bottom side. When shortcircuit occurs in the system, the gate signal is blocked by the proposed fault protection method using the device current. The simulation and experimental results show that the proposed fault protection method is verified in the shortcircuit system.