• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.416-421
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• 2000

Today, manufacturing market is highly competitive due to more complex and variable products, shorter delivery lead times, intensified product development rate, customers's increasing concern about quality, durability, maintainability, safety and environmental performance. To survive this environment, development of the automated design system is needed using AutoCAD. This paper represents a computer aided design system for watergate by using AutoCAD R2000 system and its Visual LISP computer language. The developed system ultimately generates the design for water gate through AutoCAD.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2213-2216
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• 1997

Efficient Switching of IGBT's requires fast gate drivers with high peak currents. This Paper will review the requirements for effient, reliable gate drive of IGBT's and behaviour of an IGBT switching chacteristcs. The purpose of the present paper is to investigate the switching loss mechanisms in IGBT such as MOSFETs in order to give a support to designers of IGBT gate drive circuits in selecting the more appropriate IGBTs to be used on the basics of design repuirements.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.6
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• pp.21-28
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• 2010

This study shows an optimization procedure for an automatic determination on the gate position to ensure the fill-uniformity within a part cavity by using the injection molding simulation. For an optimization, the maximum pressure-difference within a part cavity induced at the stage of filling is used to evaluate degree of fill-uniformity. In addition, a direct search scheme based on the reduction of design space is developed and applied in the optimization problem. This corresponding proposed methodology was applied in the optimization on the gate location for a CD-tray molding, as a result, showed the improvement of the fill-uniformity within the cavity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.183-189
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• 2010

In this paper, the trench gate emitter switched thyristor(EST) withl trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The characteristics of the 1700 V forward blocking EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST. we carried out layout, design and process of EST devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.92-97
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• 2008

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.535-539
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• 2001

The aim of this paper presents to develop a computer-aided design system for water gate on AutoCAD R2000system. The developed system has been written in AutoCAD and Visua ILISP with a personal computer, and is composed four modules which are the gate-lifter input module, guide-frame input module, template input module and upgrade module. Based on knowledge-based rules, the system is designed by considering several factors, such as width and height of a water gate, material, object of product and maximum depth of water. Employing the developed system enable the designer and manufactures of water gate to be more efficient in this field, and its potential capability for enhancement included FEM(Finite Element Method) and quotation system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.6
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.