• Korean Journal of Soil Science and Fertilizer
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• v.49 no.6
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• pp.651-654
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• 2016

A number of accidents relating to highly toxic hydrogen fluoride (HF) or hydrofluoric acid (HA) release have occurred over fast few decades in Korea. Thus, this study was conducted to investigate the fluoride (F) concentrations in paddy soil and brown rice from 2 different areas where the soils were exposed to HF and HA. In the first case, the HF leakage accident that occurred in 2012 affected the surrounding soils and crops and consequently, crops (rice) affected by HF were unavailable for forage even though F did not accumulate in the soil. For example, at the time of accident, F concentrations in brown rice samples were $33.0-1,395mg\;kg^{-1}$, while F concentrations in soil samples were $155-295mg\;kg^{-1}$ which were less than the Korean standard guideline values of $400mg\;kg^{-1}$. However, after a year, F concentrations in brown rice were observed below the detection limit ($1mg\;kg^{-1}$), although F concentrations in soils were similar with those in 2012. Also, large amounts of wastewater discharges containing HA occurred in 2013 and some agricultural soils exceeded the Korean standard guideline values for F ($400mg\;kg^{-1}$), but soil-plant F transfer was not observed. In conclusion, it was observed that soil to plant transfer of F is unlikely although HF and HA as gas or liquid form can cause direct damage to plants.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.1-5
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• 2000

Inductively coupled plasma (ICP) excited by a spiral planar antenna is used to etch elctrodes for PZT capacitors. Pt/RuO$_{2}$ bilayers are tested as bottom electrodes for PZT capacitors in order to utilize better leakage characteristics of Pt and easy etch characteristics of RuO$_{2}$ at the same time. The etch rates and selectivities to SiO$_{2}$ hard mask have been measured for each of Pt and RuO$_{2}$ in terms of various plasma conditions. As Cl$_{2}$ ratio increases in $O_{2}$/Cl$_{2}$ mixture, the etch rate of Pt increases while that of RuO$_{2}$ reaches the highest near 10 ％ of Cl$_{2}$. Optimum gas mixture ratio has been determined for etching Pt and RuO$_{2}$ bilayers sequentially, and sub-half micron patterning is demonstrated.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.5
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• pp.556-560
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• 2001

Remote field eddy current testing (RFECT) with through-wall transmission characteristic is being applied to pipes ranging from small tubes of heat exchanger to natural gas supply pipelines. Cast iron pipes with nominal diameter of 100mm are used primarily as the waterline pipes. The leakage of water occurs due to defects in the pipes caused by vibration of automobiles and corrosion. But, the use of direct inspection methods such as insertion of inspection equipment inside the pipelines has been limited due to its lack of economical efficiency. Economical development of inspection equipments is possible since RFECT method can be easily employed for system integration and quantitative evaluation of both inside and outside defects. In this study, the development of underground pipeline inspection system was tarried out by using RFECT method in consideration of the characteristics of waterline network. This paper specifically describes the design and production of RFECT pipeline inspection pig using centralizer mechanism, development of remote field eddy current signal acquisition and processing software, and review of RFECT system operation procedures.

• Journal of the Korean Society of Safety
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• v.24 no.3
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• pp.54-58
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• 2009

A substitute energy development has been required due to the exhaust of the fossil fuel and an environmental problem. Consequently, possible technologies producing hydrogen from water that does not release carbon is a very promising technology. Also, Iodine-Sulfur(IS) thermochemical water decomposition is one of the promising processes that are used to produce hydrogen efficiently using the high temperature gas-cooled reactor(HTGR) as an energy source that is possible to supply heat over 900$^{\circ}C$. In this study, to make a initiating events identification for the IS process, Master Logic Diagram(MLD) is used and 9 initiating events that cause a leakage of the chemical material are identified. Also, 6 events are identified among 9 initiating events above and are quantified using event tree.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.5
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• pp.365-372
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• 2009

The influence of combustor pressure on the local reaction characteristics of $CH_4$/air flames was investigated by measurements of local chemiluminescence intensity. Induced flow flames are often applied to the industrial boiler systems and incinerator in order to improve heat transfer and prevent exhaust gas leakage. In order to investigate combustion characteristics in the induced flow pattern, the combustor pressure index($P^*$) was controlled in the range of $0.7{\sim}1.3$ for each equivalence ratio in the present combustion system, where $P^*$ is defined as the ratio of absolute pressure to atmospheric one. Relationship between local reaction intensity and pressure index have been investigated by simultaneous $CH^*$, $C^*_2$ and $OH^*$ intensity measurements. It could be observed that flame length became longer with decreasing $P^*$ from $CH^*$ chemiluminescence intensity of axial direction. The mean value of $C^*_2$ and $CH^*$ chemiluminescence intensities, which indicates reaction intensity in the $CH_4$/air flames, decreased with decreasing pressure index for ${\Phi}{\leq}1$, but increased with decreasing pressure index for ${\Phi}$>1. $C^*_2/CH^*$ intensity ratio, which can be a good marker to demonstrate local equivalence ratio, was almost same for ${\Phi}{\leq}1$ regardless of pressure index change, while they showed high level for lower pressure index for ${\Phi}$>1 conditions.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.309-316
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• 2014

A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.