• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.288-293
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• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.234-234
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• 1999

The aim of this paper is to suggest a design method of the optimal model following control system using genetic algorithm (GA). This control system is designed by applying GA with reference model to the optimal determination of weighting matrices Q, R that are given by LQ regulator problem. The method to do this is that all the diagonal elements of weighting matrices are optimized simultaneously by GA, in the search domain selected adequately. And we design the model following control system to boi1er-turbine equipment by the proposed method. The model following control system designed by this method has the better command tracking performance than that of the control system designed by the trial-and-error method. The effectiveness of this control system is verified by computer simulation.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• Journal of The Korean Society of Clinical Toxicology
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• v.9 no.2
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• pp.71-76
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• 2011

Purpose: The Rumack-Matthew nomogram cannot be applied in managing overdose by extended release (ER) preparation acetaminophen (AAP). This study analyzed the clinical characteristics of ER preparation AAP overdose in order to develop a treatment recommendation. Methods: We retrospectively reviewed the medical records of patients presented to the emergency department as a result of AAP overdose from Jan 2008 to Dec 2010. Only those patients who ingested an ER preparation of AAP were included in the study. Their blood AAP concentrations were measured at 4 and 8 hours after ingestion. Clinical variables related to AAP intoxication were analyzed. Results: Of the total 108 AAP overdose patients identified during the 3-year period, 20 suffered specifically with ER preparation AAP overdose. The mean estimated ingestion amount was 167.5 mg/kg. Treatments including gastric lavage, activated charcoal, and N-acetyl cysteine (NAC) were performed on 10, 14, and 11 patients, respectively. Hepatotoxicity was diagnosed in only one patient who was then successfully treated with NAC. In another case, blood AAP concentration continued to increase until at least 11-hours after ingestion. Conclusion: This study suggested that blood AAP concentrations associated with ingestion of ER formulations of AAP, may increase in an extended manner. Therefore, multiple sampling and longer periods between samples assessing AAP blood concentration may be required for incidences of extended release overdose.

• Toxicological Research
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• v.29 no.1
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• pp.7-14
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• 2013

Betaine supplementation has been shown to alleviate altered glucose and lipid metabolism in mice fed a high-fat diet or a high-sucrose diet. We investigated the beneficial effects of betaine in diabetic db/db mice. Alleviation of endoplasmic reticulum (ER) and oxidative stress was also examined in the livers and brains of db/db mice fed a betaine-supplemented diet. Male C57BL/KsJ-db/db mice were fed with or without 1% betaine for 5 wk (referred to as the db/db-betaine group and the db/db group, respectively). Lean non-diabetic db/+ mice were used as the control group. Betaine supplementation significantly alleviated hyperinsulinemia in db/db mice. Betaine reduced hepatic expression of peroxisome proliferator-activated receptor gamma coactivator 1 alpha, a major transcription factor involved in gluconeogenesis. Lower serum triglyceride concentrations were also observed in the db/db-betaine group compared to the db/db group. Betaine supplementation induced hepatic peroxisome proliferator-activated receptor alpha and carnitine palmitoyltransferase 1a mRNA levels, and reduced acetyl-CoA carboxylase activity. Mice fed a betaine-supplemented diet had increased total glutathione concentrations and catalase activity, and reduced lipid peroxidation levels in the liver. Furthermore, betaine also reduced ER stress in liver and brain. c-Jun N-terminal kinase activity and tau hyperphosphorylation levels were lower in db/db mice fed a betaine-supplemented diet, compared to db/db mice. Our findings suggest that betaine improves hyperlipidemia and tau hyperphosphorylation in db/db mice with insulin resistance by alleviating ER and oxidative stress.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.38-47
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• 1997

A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.