• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.27-32
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• 1993

Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.159-161
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• 2005

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

• Journal of Veterinary Clinics
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• v.32 no.4
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• pp.295-300
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• 2015

The aim of the study was to assess the in vitro effect of 808-nm InGaAs diode laser on rabbit articular chondrocyte proliferation and sulphated glycosaminoglycan (sGAG) synthesis in alginate bead. Previous studies revealed either positive or negative stimulatory effects of laser on different types of cells. A 808-nm InGaAs diode laser at 1.0W power output was used to irradiate the rabbit chondrocytes in alginate beads with energy densities of $31J/cm^2$ (G 1) and $62J/cm^2$ (G 2) corresponding to the experimental groups for 10 seconds and 20 seconds, respectively at 24, 48, 72 and 96 hours after seeding. Control group was left untreated. MTT assay was performed at 1 week and 2 weeks after the $1^{st}$ laser irradiation in alginate beads. sGAG synthesis in alginate beads at 1 week and 2 weeks were determined by DMMB assay. Histological evaluation for cellular distribution and sGAG deposition around the cells were performed by alcian blue stain. MTT assay revealed no positive stimulatory effect in cell proliferation in alginate bead. DMMB assay results showed significantly increased sGAG production in G 2 chondrocytes at 2 weeks. Image analysis of alcian blue stained slides also showed significantly higher percentage of positive alcian blue stain in G 2 chondrocytes. This result suggests that 808-nm InGaAs diode laser with 1.0 W power output although cannot stimulate cell proliferation it can increase the cell secretion activity and sGAG deposition in alginate beads.

• ETRI Journal
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• v.30 no.6
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• pp.833-843
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• 2008

The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.57-61
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• 2008

We investigated the laser pulse-width dependence of dense plasmas confined within the magnetic length of $In_{0.2}Ga_{0.8}As$/GaAs multiple quantum wells under high magnetic fields up to 31 T. To fully fill the Landau levels of effectively zero-dimensional system, we used intense femtosecond (fs) laser pulses to create carrier densities near $10^{13}/cm^2$. The observed photoluminescence showed a characteristic of superfluorescence, above critical magnetic field when being excited by pulses shorter than coherence buildup time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1271-1276
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• 2004

Two-dimensionally arrayed nanocolumn lattices were fabricated by using double-exposure laser holographic method. The hexagonal lattice was formed by rotating the sample with 60 degree while the square lattice by 90 degree before the second laser-exposure. The reactive ion etching for a typical time of 30 min using CH$_4$/H$_2$ plasma enhanced the aspect-ratio by more than 1.5 with a slight increase of the bottom width of columns. The etch-damage was observed by photoluminescence (PL) spectroscopy which was removed by the wet chemical etching using HBr/$H_2O$$_2$/$H_2O$ solution, leading into the enhanced PL intensities of the PCs.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.94-95
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• 2003

최근 들어 저가용 광통신 소자를 제조하기 위한 방법으로 TEC를 사용하지 않는 비냉각형(uncooled) 레이저에 관한 연구가 활발히 진행되고 있다. 이를 위해 반도체 레이저를 형성하는 화합물 반도체 재료 적인 측면에서는 기존에 널리 사용되는 InGaAsP계 물질에 비해 AlGaInAs계 물질구조는 큰 conduction band offset ($\Delta$Ec=$\Delta$O.72Eg) 등으로 인해 고온에서 전자의 overflow를 억제하고 균일한 hole injection으로 인해 우수한 고온특성과 높은 이득(gain)을 보이는 장점을 지니고 있다. (중략)

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.