• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.372-376
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• 2008

The hydrolysis of gallium(III) has been studied using potentiometric techniques under physiological conditions of temperature 37 C and ionic strength 0.15 moldm-3 NaCl and at different metal ion concentrations. Changes in pH were monitored with a glass electrode calibrated daily in hydrogen ions concentrations. The titration data within the pH range of 2.5-9.99 were analyzed to determine stability constants of hydroxide species using the SUPERQUAD program. Several different species were considered during the calculation procedure and the following hydroxides have been characterized: Ga(OH)3, Ga(OH)4- Ga3(OH)112-, Ga4(OH)11+ and Ga6(OH)153+. Speciation calculations based on the determined constants were then used to simulate the species distribution.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.25-26
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• 2008

Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and $450^{\circ}C$ in rapid thermal annealing, and those specific contact resistance investigated by using transmission line method. According to experimental results, the specific contact resistance between p-metal and GaAs was decreased as the V/III ratio was lower. These results indicate that Si doping concentration of GaAs increased as the vacancy of V-series of GaAs was high.

• Journal of the Korean Chemical Society
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• v.39 no.5
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• pp.364-370
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• 1995

The catalytic oxidations of several olefins in $CH_2Cl_2$ have been investigated using non-redox metalloporphyrin (M=Ga(III), In(III), Tl(III)) complexes as catalyst and sodium hypochlorite as terminal oxidant. Porphyrins were $(p-CH_3O)TPP,\;(p-CH_3)TPP,\;TPP,\;(p-F)TPP,\;(p-Cl)TPP\;and\;(F_20)TPP$ (TPP=tetraphenylporphyrin), and olefins were $(p-CH_3O)-,\;(p-CH_3)-,\;(p-H)-,\;(p-F)-,\;(p-Cl)-\;and\;(p-Br)styrene$styrene and cyclopentene and cyclohexene. The substrate conversion yield was discussed according to the substituent effects of metalloporphyrin and substrate, and the radius effect of non-redox metal ion. The conversion yield of substrate by changing the substituent of TPP increased in the order of $p-CH_3O$ < $p-CH_3$ < H < p-F < p-Cl, which was consistent with the sequence of $4{\sigma}$ values of TPP. But the substituent effect of substrate on the conversion yield decreased with increasing the ${\sigma}^+$ values on substrates in the order of p-CH3O > p-CH3 > H > p-Cl > p-Br. For the oxidation of several olefins, the complexes of In(III)- and Tl(III)-porphyrins turned out to be more active catalysts than Ga(III)-porphyrin.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.1-209.1
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• 2013

GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.51-54
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• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• BMB Reports
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• v.30 no.2
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• pp.95-100
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• 1997

Two kinds of cDNA encoding mouse $Gal{\beta}$1,3(4)GlcNAc ${\alpha}$2,3-sialyltransferase (mST3Gal III) and $Gal{\beta}$1,4(3)GlcNAc ${\alpha}$2,3-sialyltransferase (mST3Gal IV) were isolated from mouse brain cDNA library by means of a PCR-based approach. The cDNA sequences included an open reading frame coding for proteins of 374 and 333 amino acids, respectively, and the primary structure of these enzymes suggested a putative domain structure consisting of four regions, like that in other glycosyltransferases. The deduced amino acid sequences of mST3GaI III and IV showed a 98% and 89% identity with rat ST3GaI III and human ST3Gal IV, respectively. Northern analysis indicated that the expression of mST3Gal III mRNA was abundant in heart, liver and adult brain, while that of mST3GaI IV mRNA was detected in all tissues tested except for testis, but the level was the highest in liver. Soluble forms of mST3GaI III and IV transiently expressed in COS cells exhibited enzyme activity toward acceptor substrates containing the terminal either $Gal{\beta}$1,3GlcNAc or $Gal{\beta}$1,4GlcNAc sequences. The substrate preferences of both enzymes were stronger for tetrasaccharides than for disaccharides.

• Laser Solutions
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• v.16 no.1
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• pp.1-4
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• 2013

The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.2-11
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• 2000

Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.