• 제목/요약/키워드: Ga(III)

검색결과 282건 처리시간 0.023초

Gallium(III) Ion Hydrolysis under Physiological Conditions

  • Hacht, Brahim
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.372-376
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    • 2008
  • The hydrolysis of gallium(III) has been studied using potentiometric techniques under physiological conditions of temperature 37 C and ionic strength 0.15 moldm-3 NaCl and at different metal ion concentrations. Changes in pH were monitored with a glass electrode calibrated daily in hydrogen ions concentrations. The titration data within the pH range of 2.5-9.99 were analyzed to determine stability constants of hydroxide species using the SUPERQUAD program. Several different species were considered during the calculation procedure and the following hydroxides have been characterized: Ga(OH)3, Ga(OH)4- Ga3(OH)112-, Ga4(OH)11+ and Ga6(OH)153+. Speciation calculations based on the determined constants were then used to simulate the species distribution.

Recent Progress of Nonpolar and Semipolar GaN on Sapphire Substrates for the Next Generation High Power Light Emitting Diodes

  • 이성남
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.20.2-20.2
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    • 2011
  • III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

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n-GaAs의 V/III족 비율에 따른 오믹 저항 연구 (A study on the Ohmic contact resistance as function of V/III ratio of n-GaAs)

  • 김인성;김상택;김선훈;기현철;고항주;김회종;전경남;김효진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.25-26
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    • 2008
  • Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and $450^{\circ}C$ in rapid thermal annealing, and those specific contact resistance investigated by using transmission line method. According to experimental results, the specific contact resistance between p-metal and GaAs was decreased as the V/III ratio was lower. These results indicate that Si doping concentration of GaAs increased as the vacancy of V-series of GaAs was high.

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Ga(Ⅲ), In(Ⅲ) 및 Tl(Ⅲ) 금속이온을 포함한 Metalloporphyrin 착물의 촉매적 특성 (Catalytic Activity of Ga(Ⅲ)-, In(Ⅲ)- and Tl(Ⅲ)-porphyrin Complexes)

  • 박유철;나훈길;김성수
    • 대한화학회지
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    • 제39권5호
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    • pp.364-370
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    • 1995
  • 비산화-환원 금속인 Ga(III), In(III), TI(III)을 포함하는 금속 포르피린을 촉매제로 NaOCl을 산화제로 하여 올레핀의 촉매적 산화반응을 $CH_2Cl_2$에서 연구하였다. 포르피린은 $(p-CH_3O)TPP,\;(p-CH_3)TPP,\;TPP,\;(p-F)TPP,\;(p-Cl)TPP $그리고 $(F_20)TPP$를 사용하였다. 올레핀은 $(p-CH_3O)-,\;(p-CH_3)-,\;(p-H)-,\;(p-F)-,\;(p-Cl)-,\;(p-Br)styrene$ 그리고 cyclopentene, cyclohexene을 사용하였다. 올레핀 산화반응에서 기질의 전환율(%)은 금속 포르피린 및 기질의 치환기 효과와 중심 금속이온 성질에 따라 고찰하였다. TPP 치환기에 따른 전환율의 변화는 $p-CH_3O$ < $p-CH_3$ < H < p-F < p-Cl 순서로 증가하였다. 이러한 증가는 TPP의 $4{\sigma}$값의 증가 순서와 일치하였다. 기질의 치환기에 따른 전환율의 변화는 $p-CH_3O$ > $p-CH_3$ > H > p-Cl > p-Br 순서로 치환기의 ${\sigma}^+$값이 증가할수록 오히려 감소하였다. 올레핀의 산화 반응에서 In(III)-, Tl(III)-포르피린은 Ga(III)-포르피린에 비하여 높은 촉매 활성을 나타내었다.

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유기 금속 화학 증착법에 의한 Si 기판 위에 GaP 층 성장시 에피의 초기 단계의 성장 매개 변수에 영향

  • 강대선;서영성;김성민;신재철;한명수;김효진
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.209.1-209.1
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    • 2013
  • GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

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Preparation of Gallium Nitride Powders and Nanowires from a Gallium(III) Nitrate Salt in Flowing Ammonia

  • Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • 제25권1호
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    • pp.51-54
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    • 2004
  • Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

Molecular Cloning and Expression of cDNAs Encoding Mouse $Gal{\beta}$1,3(4)GlcNAc ${\alpha}$2,3-Sialyltransferase (mST3Gal III) and $Gal{\beta}$1,4(3)GlcNAc ${\alpha}$2,3-Sialyltransferase (mST3GaI IV)

  • Kim, Kyoung-Sook;Kim, Cheorl-Ho;Shin, Deug-Yong;Lee, Young-Choon
    • BMB Reports
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    • 제30권2호
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    • pp.95-100
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    • 1997
  • Two kinds of cDNA encoding mouse $Gal{\beta}$1,3(4)GlcNAc ${\alpha}$2,3-sialyltransferase (mST3Gal III) and $Gal{\beta}$1,4(3)GlcNAc ${\alpha}$2,3-sialyltransferase (mST3Gal IV) were isolated from mouse brain cDNA library by means of a PCR-based approach. The cDNA sequences included an open reading frame coding for proteins of 374 and 333 amino acids, respectively, and the primary structure of these enzymes suggested a putative domain structure consisting of four regions, like that in other glycosyltransferases. The deduced amino acid sequences of mST3GaI III and IV showed a 98% and 89% identity with rat ST3GaI III and human ST3Gal IV, respectively. Northern analysis indicated that the expression of mST3Gal III mRNA was abundant in heart, liver and adult brain, while that of mST3GaI IV mRNA was detected in all tissues tested except for testis, but the level was the highest in liver. Soluble forms of mST3GaI III and IV transiently expressed in COS cells exhibited enzyme activity toward acceptor substrates containing the terminal either $Gal{\beta}$1,3GlcNAc or $Gal{\beta}$1,4GlcNAc sequences. The substrate preferences of both enzymes were stronger for tetrasaccharides than for disaccharides.

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III-V 화합물반도체에서의 He-Ne Laser를 활용한 광 특성 연구 (The study of characteristic III-V compound semiconductor by He-Ne laser)

  • 유재용;최경수;최순돈
    • 한국레이저가공학회지
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    • 제16권1호
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    • pp.1-4
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    • 2013
  • The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

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밀리미터파 Transistors

  • 범진욱;송남진
    • 한국전자파학회지:전자파기술
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    • 제11권2호
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    • pp.2-11
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    • 2000
  • 밀리미터파 회로 제작에 필수적인 능동소자인 고 속 Transistor기술은 반도체 설계 및 공정기술의 발 전으로 급격히 발달하고 있다. 주로 GaAs계나 InP 계 III-V 화합물 반도체를 이용한 고주파 transistor 는 FET기반의 MODFET과 BJT기반의 HBT가 밀 리미터파 대역에서 응용된다. 전통적인 III-V족 반 도체 이외에 SiGe와 GaN 소자 기술 역시 급속한 발전을 이루고 있다. 본 논문에서는 밀리미터파 transistor 기술에 대한 기본적인 내용과 응용 예를 소개한다.

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RHEED에 의한 GaN, InN 핵생성층의 열처리 효과 분석 (Characterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction)

  • 나현석
    • 열처리공학회지
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    • 제29권3호
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    • pp.124-131
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    • 2016
  • GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.