• Title/Summary/Keyword: GS1 Source

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Discrimination of artificial explosions by using seismo-acoustic data in 2004 and installation of BRDAR (지진-음파 자료를 이용한 2004년도 인공발파 식별과 백령도 지진-음파 관측망 설치)

  • Che, Il-Young;Jeon, Jeong-Soo;Shin, In-Cheol
    • Proceedings of the Earthquake Engineering Society of Korea Conference
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    • 2005.03a
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    • pp.68-73
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    • 2005
  • In succession of the previous works, seismo-acoustic analysis was conducted to collect ground truth events and to discriminate surface explosions from natural earthquakes in the Korean Peninsula for 2004. In this period, total 510 seismo-acoustic events corresponding to 10.8 percent of total seismic events occurred in and near the Korean Peninsula were analyzed and discriminated as artificial surface explosions. Events distribution of the seismo-acoustic events in 2004 is similar to the previous results of 1999-2003. And newly determined seismo-acoustic events were added to the surface explosions database. To extend infrasound detection capability, Korea Institute of Geoscience and Mineral Resources (KIGAM) and Southern Methodist University (SMU) installed new seismo-acoustic array (BRDAR) in Baekryoung Island last November, 2004. The array configuration and design is nearly same to previous seismo-acoustic arrays CHNAR, KSGAR, a triangular 1 km aperture. BRDAR consists of 5 short period vertical seismometers (GS-13) in seismic vaults and 13 microbarometers (Chaparral Model 2). Preliminary analysis using data collected from BRDAR shows an extension of infrasound detection capability to western part of the Korean Peninsula. Also, multiple observations of infrasound at BRDAR and other arrays gave an opportunity to localize sound source regions.

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Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications

  • Jang, Moon-Gyu;Kim, Yark-Yeon;Jun, Myung-Sim;Choi, Chel-Jong;Kim, Tae-Youb;Park, Byoung-Chul;Lee, Seong-Jae
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.1
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    • pp.10-15
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    • 2006
  • Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics (실리콘 나노 와이어 기반의 무접합 MOSFET의 최적 설계 및 기본적인 고주파 특성 분석)

  • Cha, Seong-Jae;Kim, Kyung-Rok;Park, Byung-Gook;Rang, In-Man
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.10
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    • pp.14-22
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    • 2010
  • The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

In-situ Precipitation of Arsenic and Copper in Soil by Microbiological Sulfate Reduction (미생물학적 황산염 환원에 의한 토양 내 비소와 구리의 원위치 침전)

  • Jang, Hae-Young;Chon, Hyo-Taek;Lee, Jong-Un
    • Economic and Environmental Geology
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    • v.42 no.5
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    • pp.445-455
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    • 2009
  • Microbiological sulfate reduction is the transformation of sulfate to sulfide catalyzed by the activity of sulfate-reducing bacteria using sulfate as an electron acceptor. Low solubility of metal sulfides leads to precipitation of the sulfides in solution. The effects of microbiological sulfate reduction on in-situ precipitation of arsenic and copper were investigated for the heavy metal-contaminated soil around the Songcheon Au-Ag mine site. Total concentrations of As, Cu, and Pb were 1,311 mg/kg, 146 mg/kg, and 294 mg/kg, respectively, after aqua regia digestion. In batch-type experiments, indigenous sulfate-reducing bacteria rapidly decreased sulfate concentration and redox potential and led to substantial removal of dissolved As and Cu from solution. Optimal concentrations of carbon source and sulfate for effective microbial sulfate reduction were 0.2~0.5% (w/v) and 100~200 mg/L, respectively. More than 98% of injected As and Cu were removed in the effluents from both microbial and chemical columns designed for metal sulfides to be precipitated. However, after the injection of oxygen-rich solution, the microbial column showed the enhanced long-term stability of in-situ precipitated metals when compared with the chemical column which showed immediate increase in dissolved As and Cu due to oxidative dissolution of the sulfides. Black precipitates formed in the microbial column during the experiments and were identified as iron sulfide and copper sulfide. Arsenic was observed to be adsorbed on surface of iron sulfide precipitate.

Minimum Curing Time Prediction of Early Age Concrete to Prevent Frost Damage (동해방지를 위한 초기재령 콘크리트의 최소 양생 시간 예측)

  • Pae, Su-Won;Yi, Seong-Tae;Kim, Jin-Keun
    • Journal of the Korea Concrete Institute
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    • v.19 no.1
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    • pp.27-37
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    • 2007
  • The purpose of this study is to propose a method to predict the minimum curing time of early age concrete required to prevent frost damage. Tests were performed to examine major factors, which affect the compressive strength of concrete frozen at early ages and investigate the source of frost damage at early age concrete. The results from the tests showed that the loss rate of compressive strength decreases as the beginning time of frost damage was delayed and water-cement ratio was lower. In addition, the test results also showed that concrete made with type III cement was less susceptible to frost damage than concrete made with ordinary Portland cement and frost damage occurred through the formation of ice lenses. When early age concrete is being damaged by frozen, a phase transition into ice of free water presented at the capillary pores of the concrete gives a reason for the decrease of compressive strength. Accordingly, the frost resistance of fresh concrete can be determined based on the saturation degree of the capillary pores. The method to predict the minimum curing time was suggested using the concept of critical saturation degree of the capillary pores.

Nutrition composition differences among steamed and freeze-dried mature silkworm larval powders made from 3 Bombyx mori varieties weaving different colored cocoons

  • Ji, Sang-Deok;Kim, Nam-Suk;Kweon, HaeYong;Choi, Bo Hye;Kim, Kee-Young;Koh, Young Ho
    • International Journal of Industrial Entomology and Biomaterials
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    • v.33 no.1
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    • pp.6-14
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    • 2016
  • The mulberry silkworm, Bombyx mori has been one of the most important domestic animals which have provided with silk fibers for weaving fabrics and a food for a protein and lipid source. In addition, various health improvement effects of diverse silkworm larval powders were reported. Recently we found that steamed and freeze-dried mature silkworm larval powder (SMSP) generated using white-jade (also known as Backokjam) silkworm variety extended healthspan and increased resistance to Parkinson's disease in animal models. Because the colors of cocoons in silkworm varieties were caused by altered signal transduction pathways transporting phytochemicals from intestinal lumens to silk glands, we performed the proximate, amino acid, mineral, carbohydrates, fatty acid, and cholesterol composition analyses of SMSPs of 3 silkworm varieties which were weaving light yellow, golden, and red cocoons. Although most of nutrient compositions among 3 SMSPs were similar, there were significant differences in certain amino acids, minerals, and fatty acid compositions. Red silk silkworm (RS)-SMSP had higher contents of crude proteins and total amino acids than other SMSPs. In addition, the ratio of n-3/n-6 unsaturated fatty acids were higher than the other SMSPs. In contrast Golden silk silkworm (GS)-SMSP had higher ratio of potassium/sodium than the other SMSPs. These nutrient analysis results suggested that 3 SMSPs might have common and unique health improvement effects. Thus, further studies in the functionalities of the 3 SMSPs will reveal unknown their health improvements effects.

Sizing of Vertical Borehole Heat Exchangers using TRNOPT (TRNOPT를 이용한 수직 지중열교환기 길이 산정 방법에 관한 연구)

  • Park, Seung-Hoon;Lee, Hyun-Soo;Jang, Young-Sung;Kim, Eui-Jong
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.28 no.10
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    • pp.402-407
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    • 2016
  • Ground-coupled heat pump systems have been widely used, as they are regarded as a renewable energy source and ensure a high annual efficiency. Among the system components, borehole heat exchangers (BHE) play an important role in decreasing the entering water temperature (EWT) to heat pumps in the cooling season, and consequently improve the COP. The optimal sizing of the BHEs is crucial for a successful project. Other than the existing sizing methods, a simulation-based design tool is more applicable for modern complex geothermal systems, and it may also be useful since design and engineering works operate on the same platform. A simulation-based sizing method is proposed in this study using the well-known Duct STorage (DST) model in Trnsys. TRNOPT, the Trnsys optimization tool, is used to search for an optimal value of the length of BHEs under given ground loads and ground properties. The result shows that a maximum EWT of BHEs during a design period (10 years) successfully approaches the design EWT while providing an optimal BHE length. Compared to the existing design tool, very similar lengths are calculated by both methods with a small error of 1.07%.

Genomic Analysis of Dairy Starter Culture Streptococcus thermophilus MTCC 5461

  • Prajapati, Jashbhai B.;Nathani, Neelam M.;Patel, Amrutlal K.;Senan, Suja;Joshi, Chaitanya G.
    • Journal of Microbiology and Biotechnology
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    • v.23 no.4
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    • pp.459-466
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    • 2013
  • The lactic acid bacterium Streptococcus thermophilus is widely used as a starter culture for the production of dairy products. Whole-genome sequencing is expected to utilize the genetic basis behind the metabolic functioning of lactic acid bacterium (LAB), for development of their use in biotechnological and probiotic applications. We sequenced the whole genome of Streptococcus thermophilus MTCC 5461, the strain isolated from a curd source, by 454 GS-FLX titanium and Ion Torrent PGM. We performed comparative genome analysis using the local BLAST and RDP for 16S rDNA comparison and by the RAST server for functional comparison against the published genome sequence of Streptococcus thermophilus CNRZ 1066. The whole genome size of S. thermophilus MTCC 5461 is of 1.73Mb size with a GC content of 39.3%. Streptococcal virulence-related genes are either inactivated or absent in the strain. The genome possesses coding sequences for features important for a probiotic organism such as adhesion, acid tolerance, bacteriocin production, and lactose utilization, which was found to be conserved among the strains MTCC 5461 and CNRZ 1066. Biochemical analysis revealed the utilization of 17 sugars by the bacterium, where the presence of genes encoding enzymes involved in metabolism for 16 of these 17 sugars were confirmed in the genome. This study supports the facts that the strain MTCC 5461 is nonpathogenic and harbors essential features that can be exploited for its probiotic potential.

Switching and Leakage-Power Suppressed SRAM for Leakage-Dominant Deep-Submicron CMOS Technologies (초미세 CMOS 공정에서의 스위칭 및 누설전력 억제 SRAM 설계)

  • Choi Hoon-Dae;Min Kyeong-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.3 s.345
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    • pp.21-32
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    • 2006
  • A new SRAM circuit with row-by-row activation and low-swing write schemes is proposed to reduce switching power of active cells as well as leakage one of sleep cells in this paper. By driving source line of sleep cells by $V_{SSH}$ which is higher than $V_{SS}$, the leakage current can be reduced to 1/100 due to the cooperation of the reverse body-bias. Drain Induced Barrier Lowering (DIBL), and negative $V_{GS}$ effects. Moreover, the bit line leakage which may introduce a fault during the read operation can be eliminated in this new SRAM. Swing voltage on highly capacitive bit lines is reduced to $V_{DD}-to-V_{SSH}$ from the conventional $V_{DD}-to-V_{SS}$ during the write operation, greatly saving the bit line switching power. Combining the row-by-row activation scheme with the low-swing write does not require the additional area penalty. By the SPICE simulation with the Berkeley Predictive Technology Modes, 93% of leakage power and 43% of switching one are estimated to be saved in future leakage-dominant 70-un process. A test chip has been fabricated using $0.35-{\mu}m$ CMOS process to verify the effectiveness and feasibility of the new SRAM, where the switching power is measured to be 30% less than the conventional SRAM when the I/O bit width is only 8. The stored data is confirmed to be retained without loss until the retention voltage is reduced to 1.1V which is mainly due to the metal shield. The switching power will be expected to be more significant with increasing the I/O bit width.

Design and Fabrication of the 0.1${\mu}{\textrm}{m}$ Г-Shaped Gate PHEMT`s for Millimeter-Waves

  • Lee, Seong-Dae;Kim, Sung-Chan;Lee, Bok-Hyoung;Sul, Woo-Suk;Lim, Byeong-Ok;Dan-An;Yoon, yong-soon;kim, Sam-Dong;Shin, Dong-Hoon;Rhee, Jin-koo
    • Journal of electromagnetic engineering and science
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    • v.1 no.1
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    • pp.73-77
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    • 2001
  • We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

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