• Journal of Magnetics
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• v.22 no.1
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• pp.7-13
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• 2017

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of Magnetics
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• v.17 no.3
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• pp.214-218
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• 2012

The water level and temperature properties for the cooling system of potassium titanyl phosphate laser systems were observed. The middle point of the GMR-SV magnetoresistance curve is set in the neighborhood of high magnetic sensitivity (2.8 %/Oe). The experimental results for resistance dependence on water height and temperature showed linear regions with rates of 0.4 ${\Omega}/mm$ and 0.1 ${\Omega}/^{\circ}C$, respectively. The proposed results were found to be for adjusting the water level and temperature in the laser cooling system.

• Journal of the Korean Magnetics Society
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• v.25 no.4
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.193-199
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• 2013

The regional distribution of magnetic isotropy depending on the post annealing condition for the dual-type structure GMR-SV (giant magnetoresistance-spin valve) of NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multilayer was investigated. The rotation of in-plane ferromagnetic layer induced by controlment of the post annealing temperature inside of the vacuum chamber. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetization easy axis of the free layer and the pinned layer are measured by between $0^{\circ}$ and $360^{\circ}$ angles for the applied fields. The optimum annealing temperature having a steady and isotropy magnetic sensitivity of 1.52 %/Oe was $107^{\circ}C$ in the rotational section of $0{\sim}90^{\circ}$. By investigating the switching process of magnetization for an arbitrary measuring direction, the in-plane orthogonal magnetization for the dual-type GMR-SV multilayer can be used by a high sensitive biosensor for detection of magnetized micro-beads.

• Journal of Magnetics
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• v.14 no.2
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• pp.80-85
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• 2009

The mineral dissolution sensor system using GMR-SV and glass/Mg(200 nm) was prepared and characterized. The magnetic field sensitivity of GMR-SV to microscopic magnetic variation was about 0.8%/Oe. The change that occurs when Mg-film dissolves in water, the solubility of water, which is one of the basic properties of mineral water, was sensed by measuring the subtle variation of an electric current. In the case of edible water with Mg mineral added, bubbles were generated on the surface of the Mg film in the first 45 minutes, and the number of drops that were dissolved more rapidly than with the tap and DI waters later reduced to zero. For the edible water samples that each had different mineral Mg concentrations, the Mg solubility speed significantly differed. After injecting Mg film into the edible water, the magnetoresistance of the output GMR-SV signal decreased from a maximum of $45.4\;{\Omega}$ to a minimum of $43.6\;{\Omega}$. The measurement time was within 1 min, giving the rate of change ${\Delta}R/{\Delta}t=0.18\;{\Omega}/s$. This measurement system can be applied to develop a mineral Mg solubility GMR-SV sensor that can be used to sense the change from edible water to reduced alkali.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.173-177
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• 2012

The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.162-168
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• 2015

The ${\mu}$-turn coil having a width of ${\mu}m$ on the GMR-SV (giant magnetoresistance-spin valve) device based on the antiferromagnetic IrMn layer was fabricated by using the optical lithography process. In the case of GMR-SV film and GMR-SV device, the magnetoresistance ratios and the magnetic sensitivities are 4.4%, 2.0%/Oe and 1.6 %, 0.1%/Oe, respectively. In the y-z plane the distribution of magnetic field of GMR-SV device and $10{\mu}$-turns coil which put under the several magnetic bead(MB)s with a diameter of $1{\mu}m$ attached to RBC (red blood cell) was analyzed by the computer simulation using the finite element method. When the AC currents of 20 kHz from 0.1 mA to 10.0 mA flow to the 10 turns ${\mu}$-coil, the magnetic field at the position of $z=0{\mu}m$ at the center of coil was calculated from $30.1{\mu}T$ to $3060{\mu}T$ in proportion to the current. The magnetic field at the position of $z=10{\mu}m$ was decreased to one-sixth of that of $z=0{\mu}m$. It was confirmed that the $10{\mu}$-turn coil having enough magnitude of magnetic field for the capture of RBC is possible to use as a biosensor for the detection of magnetic beads attached to RBC.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.