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http://dx.doi.org/10.4283/JMAG.2017.22.1.007

Rotation Effect of In-plane FM layer on IrMn Based GMR-SV Film  

Khajidmaa, Purevdorj (Department of Oriental-Western Biomedical Engineering, General Graduate School, Sangji University)
Choi, Jong-Gu (Department of Oriental Biomedical Engineering, Sangji University)
Lee, Sang-Suk (Department of Oriental-Western Biomedical Engineering, General Graduate School, Sangji University)
Publication Information
Journal of Magnetics / v.22, no.1, 2017 , pp. 7-13 More about this Journal
Abstract
The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.
Keywords
dual-type giant magnetoresistance-spin valve (GMR-SV) film; annealing temperature; rotation angle; coercivity ($H_c$); magnetic sensitivity (MS);
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