• Proceedings of the Korean Society of Computer Information Conference
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• 2014.01a
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• pp.399-400
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• 2014

최근에 디스플레이 산업이 변화하고 우리나라 기업들이 세계시장을 주도해나가고 있는 실정이다. 특히 FPD 기술에 있어서 화면의 크기가 급속하게 대형화함에 따라 품질향상과 생산성 향상을 위해서 생상환경과 설비의 자동화가 매우 중요한 이슈가 되고 있다. 본 논문에서는 FPD 제조 공정 중 화학 증착 및 메탈 주입 공정 중 원판 GLASS의 이송 및 고정에 있어 항시 사용하는 GLASS CARRIER의 검사에 있어서 자동으로 검사할 수 있는 시스템을 제안한다.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.1
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• pp.92-97
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• 2015

The design of the glass-carrier was studied using simulations of the temperature distribution of an ITO deposition inline-sputter process. The temperature distribution was simulated in Heating Chamber 7, and in the ITO Deposition Chambers 8 and 9. The temperature distribution of the glass sheets was low in both the lower and upper lines. Moreover, it was observed that the temperature in Chamber 8 significantly affected the temperature in Chamber 9, and that the latter was hotter. The rear of the chambers were subjected to more heating than the fronts, so the temperature range at the back was wider. Redesigning the shape of the carrier made it possible to load more glass sheets on the glass carrier, and to make deposits on the ITO glass at higher temperature, over a wider area.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.41-45
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• 2018

We have simulated the process induced warpage for panel level package using finite element method. Silicon chips of $5{\times}5mm^2$ were redistributed on $122.4{\times}93.6mm^2$ size panel and the total number of redistributed chips was 221. The warpage at each process step, for example, (1) EMC molding, (2) attachment of detach core, (3) heating, (4) removal of a carrier, and (5) cooling was simulated using ANSYS and the effects of detach core and carrier materials on the warpage were investigated. The warpage behaved complexly depending on the materials for the detach core and carrier. However, glass carrier showed the lower warpage than FR4 carrier regardless of detach core material, and the minimum warpage was observed when the glass was used for the detach core and carrier at the same time.

• Journal of the Korean Society of Industry Convergence
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• v.10 no.3
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• pp.179-185
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• 2007

Quartz glass are used in semiconductor industries as the reaction furnace, wafer carrier and accessaries. During the process the quartz glass received compression by direct contact with other quartz glass ware and metal as the form of weight itself and vacuum pressure and fatigue by vibrations caused by process. Even as the other ceramic materials quartz glass have high compressive strength but often there happened crack and breakage of quartz glass resulted in a great damage in the process. In this paper investigation will be carried out on fracture behavior of quartz glass under local load to give guideline to prevent unintended fracture of quartz glass.

• YAKHAK HOEJI
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• v.34 no.3
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• pp.192-198
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• 1990

Three sugar glass dispersions of sulfamerazine were prepared using dextrose, galactose and sucrose as the carriers, with the ratio of the drug to the carrier was 1:9. The chemical stability of sulfamerazine in the glass dispersion system was studied using TLC. TLC revealed no additional spot and there was good correspondence with the Sulfamerazine itself. While time required to dissolve 50%($T_{50%}$) of sulfamerazine powder was 390 min that of dextrose glass dispersion system was 1.5 min. and galactose system was 4.0 min. in distilled water. 23) $T_{50%}$ of physical mixture with dextrose, galactose and sucrose were 26.4 min., 26.5 min., and 26.0 min. respectively in distilled water. $T_{50%}$ of control was 54 min. and those of all of the glass dispersion systems were within 1 min. in 0.1N HCl. The dissolution rates of sulfamerazine from sugar glass dispersion system in distilled water was greater than that in 0.1N HCl.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.11-15
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• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.