• Journal of Powder Materials
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• v.9 no.6
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• pp.422-432
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• 2002

Mechanically driven decomposition of intermetallics during mechanical milling(MM 1 was investigated. This process for Fe-Ce and Fe-Sn system was studied using conventional XRD, DSC, magnetization and alternative current susceptibility measurements. Mechanical alloying and milling form products of the following composition (in sequence of increasing Gecontent): $\alpha$(${\alpha}_1$) bcc solid solution, $\alpha$+$\beta$-phase ($Fe_{2-x}Ge$), $\beta$-phase, $\beta$+FeGe(B20), FeGE(B20), FeGe(B20)+$FeGe_2$,$FeGe_2$,$FeGe_2$+Ge, Ge. Incongruently melting intermetallics $Fe_6Ge_5$ and $Fe_2Ge_3$ decompose under milling. $Fe_6Ge_5$ produces mixture of $\hat{a}$-phase and FeGe(B20), $Fe_2Ge_3$ produces mixture of FeGe(B20) and $FeGe_2$ phases. These facts are in good agreement with the model that implies local melting as a mechanism of new phase for-mation during medchanical alloying. Stability of FeGe(B20) phase, which is also incongruently melting compound, is explained as a result of highest density of this phase in Fe-Ge system. Under mechanical milling (MM) in planetary ball mill, FeSn intermetallic decomposes with formation $Fe_5Sn_3$ and $FeSn_2$ phases, which have the biggest density among the phases of Fe-Sn system. If decomposition degree of FeSn is relatively small(<60%), milled powder shows superparamagnetic behavior at room temperature. For this case, magnetization curves can be fitted by superposition of two Langevin functions. particle sizes for ferromagnetic $Fe_5Sn_3$ phase determined from fitting parameters are in good agreement with crystalline sizes determined from XRD data and remiain approximately chageless during MM. The decomposition of FeSn is attributed to the effects of local temperature and local pressure produced by ball collisions.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.314-316
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• 1997

We have studied the epitaxial growth and electrical properties of $Si_{0.8}Ge_{0.2}$, films on Si substrates at $550^{\circ}C$ by LPCVD. In a low $PH_3$, partial pressure region such as below 1.25 mPa, the phosphorus doping concentration increased proportionally with increasing $PH_3$ partial pressure while the deposition rate and the Ge fraction x were constant. In a higher $PH_3$ partial pressure region, the phosphorus doping concentration and the deposition rate decreased, while the Ge fraction slightly increased. The dependence of P incorporation rate on the $PH_3$ partial pressure was similar to the phosphorus doping concentration. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_4$ adsorption/reaction and the $GeH_4$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_4$ than on $GeH_4$. In a higher $PH_3$ partial pressure region, the deposition is largely controlled by surface coverage effect of phosphorus atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.62-62
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• 2011

현재 TFT의 주요 재료로 사용되는 비정질 실리콘은 전하 이동도가 매우 작아 고속 스위칭과 같은 고성능을 구현하기 어려우며 이동도 향상을 위해 고온 공정이 적용되야 하는 단점을 가지고 있다. 이러한 문제를 해결하기 위해 전하 이동도가 큰 박막재료를 바탕으로 박막 트랜지스터의 연구개발이 필요하며 이를 위한 해결책 중 새로운 스위칭 동작원리를 제공하며 고 이동도를 갖는 비정질 칼코지나이드 재료가 각광 받고 있다. 본 연구에서는 박막 스위칭 소자 응용을 위해 GeTe 재료를 기반으로 Se을 치환하여 GeSexTe1-x 박막을 제작한 후 소자의 전기적 특성을 평가하였다. GeTe 박막의 결정화 온도는 $187^{\circ}C$였으며 Se을 점진적으로 첨가한 GeSexTe1-x (X=0.2, 0.4, 0.6) 박막의 경우 각각 $213^{\circ}C$, $240^{\circ}C$, $287^{\circ}C$로 측정되었다. 이는 상대적으로 Ge과 Se의 결합에너지가 Ge과 Te의 결합에너지 보다 크기 때문에 Se 함량의 증가에 따라 비정질상의 안정성이 증가된 것으로 판단된다. 비교적 열적 안정성이 높은 3가지의 각각 다른 Se함량을 가진 Ge1.07 Se0.50 Te0.43, Ge1.07 Se0.68 Te0.26, Ge0.95 Se0.90 Te0.15의 소자를 제작하여 스위칭 특성을 분석하였다. GeTe의 경우 전형적인 메모리 스위칭 특성이 나타난 반면 위의 조성을 갖는 박막의 경우 반복적인 문턱 스위칭 특성을 보였다. 이는 Se이 첨가되면서 열적 안정성의 증가로 인해 스위칭이 일어난 후에도 비정질 상을 유지하기 때문이라 판단된다. 각각 제작된 소자에서 인가 전압의 증가와 펄스의 rising time 감소에 따라 더 빠른 스위칭 시간을 보였으며 Se함량이 감소함에 따라 스위칭 전압 또한 감소하는 것을 확인하였다. On 상태의 저항은 Se 함량에 따라 크게 차이가 없었지만 Off 상태의 저항은 Se 함량이 증가됨에 따라 증가되는 것을 확인하였다. 결과적으로 Se 함량에 따른 스위칭 특성의 최적화를 통해 고성능 스위칭 소자에 적용될 수 있을 것이라 판단된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.314-320
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• 1998

In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.

• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Journal of applied mathematics & informatics
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• v.22 no.1_2
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• pp.237-245
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• 2006

The set S of distinct scores (outdegrees) of the vertices of a k-partite tournament T($X_l,\;X_2, ..., X_k$) is called its score set. In this paper, we prove that every set of n non-negative integers, except {0} and {0, 1}, is a score set of some 3-partite tournament. We also prove that every set of n non-negative integers is a score set of some k-partite tournament for every $n{\ge}k{\ge}2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.1A
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• pp.85-90
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• 2008

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-dB and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in $0.35{\mu}m$ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-dB of -13 dBm with an OIP3 of 3.7 dBm, while the up-converter with the degeneration resistors produces a P1-dB of -10 dBm with an OIP3 of 8.7 dBm.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.31-37
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• 2015

Composition-controlled ternary components chalcogenides germanium tin sulfide ($Sn_xGe_{1-x}S$) nanoparticles were synthesized by a novel gas-phase laser photolysis reaction of tetramethyl germanium, tetramethyl tin, and hydrogen sulfide mixture. Subsequent thermal annealing of as-grown amorphous nanoparticles produced the crystalline orthorhombic phase nanoparticles. All these composition-tuned nanoparticles showed excellent cycling performance of the lithium ion battery. The germanium sulfide nanoparticles exhibit a maximum capacity of 1200 mAh/g after 70 cycles. As the tin composition (x) increases, the capacity maintains better at the higher discharge/charge rate. This novel synthesis method of tin germanium sulfide nanoparticles is expected to contribute to expand their applications in high-performance energy conversion systems.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.60-66
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• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• Journal of Magnetics
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• v.18 no.4
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• pp.405-411
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• 2013

The structural, magnetic and magnetocaloric properties of $CoMn_{1-x}Cr_xGe$ (x=0.05-0.125) have been investigated by using electron microscopy, x-ray diffraction, calorimetric and magnetic measurements. In this study, our aim is to justify the magnetocaloric effect by tuning the structural and magnetic transition temperature with Cr doping on CoMnGe pure system. The substitution of Cr for Mn leads to a decrease of both structural and magnetic transition temperatures. However, structural and magnetic transition temperatures do not close to each other. From magnetization measurement, we calculate that isothermal entropy change associated with magnetic transition can be as high as 3.82 J $kg^{-1}K^{-1}$ at 302 K in a field of 7 T. Meanwhile, structural phase transition contribution to isothermal entropy change is calculated as 5.85 J $kg^{-1}K^{-1}$ at 322 K for 7 T.