• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.2 s.302
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• pp.27-36
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• 2005

This thesis proposed an effective encryption method for the DCT-based image/video contents and made it possible to operate in a high speed by implementing it as an optimized hardware. By considering the increase in the amount of the calculation in the image/video compression, reconstruction and encryption, an partial encryption was performed, in which only the important information (DC and DPCM coefficients) were selected as the data to be encrypted. As the result, the encryption cost decreased when all the original image was encrypted. As the encryption algorithm one of the multi-mode AES, DES, or SEED can be used. The proposed encryption method was implemented in software to be experimented with TM-5 for about 1,000 test images. From the result, it was verified that to induce the original image from the encrypted one is not possible. At that situation, the decrease in compression ratio was only $1.6\%$. The hardware encryption system implemented in Verilog-HDL was synthesized to find the gate-level circuit in the SynopsysTM design compiler with the Hynix $0.25{\mu}m$ CMOS Phantom-cell library. Timing simulation was performed by Verilog-XL from CadenceTM, which resulted in the stable operation in the frequency above 100MHz. Accordingly, the proposed encryption method and the implemented hardware are expected to be effectively used as a good solution for the end-to-end security which is considered as one of the important problems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.431-441
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• 2003

This paper presents the design of 32 bit microprocessor for a sequence control using a field programmable gate array(FPGA). The microprocessor was designed by a VHDL with top down method, the program memory was separated from the data memory for high speed execution of sequence instructions. Therefore it was possible that sequence instructions could be operated at the same time during the instruction fetch cycle. In order to reduce the instruction decoding time and the interface time of the data memory interface, an instruction code size was implemented by 32 bits. And the real time debug operation was implemented for easeful debugging the designed processor with a single step run, PC break point run, data memory break point run. Also in this designed microprocessor, pulse instructions, step controllers, master controllers, BM and BCD type arithmetic instructions, barrel shift instructions were implemented for sequence logic control. The FPGA was synthesized under a Xilinx's Foundation 4.2i Project Manager using a V600EHQ240 which contains 600,000 gates. Finally simulation and experiment were successfully performed respectively. For showing good performance, the designed microprocessor for the sequence logic control was compared with the H8S/2148 microprocessor which contained many bit instructions for sequence logic control. The designed processor for the sequence logic showed good performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.24-31
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• 2007

Up to date, a lot of bus protocol and bus architecture are released though most of them are based on the shared bus architecture and inherit the limitation of performance. SNP (SoC Network Protocol), and hence, SNA (SoC Network Architecture) which are high performance on-chip-bus protocol and architecture, respectively, have been proposed to solve the problems of the conventional shared bus. We refine the SNA specification and improve the performance and functionality. The performance of the SNA is improved by supporting simultaneous routing for bus request of multiple masters. The internal routing logic is also improved so that the gate count is decreased. The proposed SNA employs XSNP (extended SNP) that supports almost perfect compatibility with AMBA AHB protocol without performance degradation. The hardware complexity of the improved SNA is not increased much by optimizing the current routing logic. The improved SNA works for IPs with the original SNP at its best performance. In addition, it can also replace the AMBA AHB or interconnect matrix of a system, and it guarantees simultaneous multiple channels. That is, the existing AMBA system can show much improved performance by replacing the AHB or the interconnect matrix with the SNA. Thanks to the small number of interconnection wires, the SNA can be used for the off-chip bus system, too. We verify the performance and function of the proposed SNA and XSNP simulation and emulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.619-628
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• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• Journal of the Korean Society of Radiology
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• v.10 no.7
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• pp.483-487
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• 2016

The purpose of this study is to investigate whether gold nanoparticles had radiosensitization when combined with gamma and x ray beam. Cytotoxicity was mearsured with comparing survival fraction after incubated time 6,12,18 and 24 hours. Clonogenic assay was employed to assess survival fraction of cells with and without gold nanoparticles treatment following gamma ray irradiation. The most of gold nanoparticles were distributed in the cytoplasm. And the toxicity of gold nanoparticles used this study were found to be non-cytotoxic. And we also observed enhancement by about 40% in RBE value for gamma ray irradiation of cells treated with gold nanoparticles. Dose reduction of about half for gamma ray irradiation is demonstrated for gold nanoparticles treated cells as compared to untreated cells. In cells with exposed to gamma ray, DNA damage was increased when compared to only radiation exposed cells. The study revealed a significant reduction in radiation dose for killing the cells with internalized gold nanoparticles as compared to the cells without gold nanoparticles. The gold nanoparticles treatment resulted in enhancement of radiation effect as evident from increase in relative biological effectiveness values for photon irradiated cells.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.713-716
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• 2013

The device performances of N-channel Tunneling FET have been characterized with different intrinsic length between drain and gate($L_{in}$), drain and source doping, permittivity and oxide thickness when the total effective channel length is constant. N-channel Tunneling FET of SOI structure have been used in characterization. $L_{in}$ was from 30nm to 70nm, dose concentration of drain and source were from $2{\times}10^{12}cm^{-2}$ to $2{\times}10^{15}cm^{-2}$ and from $1{\times}10^{14}cm^{-2}$ to $3{\times}10^{15}cm^{-2}$, permittivity was from 3.9 to 29, and oxide thickness was from 3nm to 9nm. The device performances were characterized by Subthreshold slope(S-slope), On/off ratio, and leakage current. From the simulation results, the leakage current have been reduced for long $L_{in}$ and low drain doping. S-slope have been reduced for high source doping, high permittivity and thin oxide thickness. With considering the leakage current and S-slope, it is desirable that are long $L_{in}$, low drain doping, high source doping, high permittivity and thin oxide thickness to optimize device performance in n-channel Tunneling FET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.47-52
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• 2006

This paper proposes a novel low-power $32bit\times32bit$ multiplier for deep submicron technologies beyond 130nm. As technology becomes small, static power due to leakage current significantly increases, and it becomes comparable to dynamic power. Recently, shutdown method based on MTCMOS is widely used to reduce both dynamic and static power. However, it suffers from severe power line noise when restoring whole large-size functional block. Therefore, the proposed multiplier mitigates this noise by shutting down and waking up sequentially along with pipeline stage. Fabricated chip measurement results in $0.35{\mu}m$ technology and gate-transition-level simulation results in 130nm and 90nm technologies show that it consumes $66{\mu}W,\;13{\mu}W,\;and\;6{\mu}W$ in idle mode, respectively, and it reduces power consumption to $0.04%\sim0.08%$ of active mode. As technology becomes small, power reduction efficiency degrades in the conventional clock gating scheme, but the proposed multiplier does not.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.3
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• pp.298-306
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• 2014

The railway signalling system for safe train operation regulates the train speed to ensure the safety distance between consecutive trains by using wayside facilities such as track circuits and interlocking systems. In addition, this signalling system controls the trackside equipment such as a railway point along the train line. This ground-equipment-based train control systems require high CAPEX and OPEX. To deal with these problems, the train control system using the on-board controller has been recently proposed and its related technologies have been widely studied. The on-board-controller-based train control system is that the on-board controller can directly control the trackside equipment on the train line. In addition, if this system is used, the wayside facilities can be simplified, and as a result, the efficient and cost-effective train control system can be realized. To this end, we have developed the prototypes of the on-board controller and wayside object control units which control the point and crossing gate and performed the integrated operation simulation in a testbed. In this paper, before the field test of the on-board-controller-based train control system, we perform the preliminary field trial including the installation test, wireless access test, interface test with other on-board devices, and normal operation test.