• Proceedings of the KIEE Conference
• /
• 1999.07b
• /
• pp.507-509
• /
• 1999

In this paper, we propose a new fuzzy model identification method that can yield a successful fuzzy rule base for fundamental approximations. The method in this paper uses a set of input-output data and is based on a hybrid messy genetic algorithm (mGA) with a fine-tuning scheme. The mGA processes variable-length strings, while standard GAs work with a fixed-length coding scheme. For successfully identifying a complex nonlinear system, we first use the mGA, which coarsely optimizes the structure and the parameters of the fuzzy inference system, and then the gradient descent method which tine tunes the identified fuzzy model. In order to demonstrate the superiority and efficiency of the proposed scheme, we finally show its application to a nonlinear approximation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05a
• /
• pp.181-184
• /
• 2004

The green emitting phosphor, $ZnGa_2O_4:Mn$ thin film with spinel structure were deposited by rf magnetron sputtering. Thin film phosphors were heat-treated in nitrogen, vacuum and air atmosphere, respectively. The effects of the substrates, heat-treatment conditions and the sputtering parameters were investigated. The growing behavior and luminescent properties of thin films depend on the crystallinity of the substrates. The Ga/Zn atomic ratios and luminescent characteristics were dependent on the annealing conditions.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.9-12
• /
• 2000

InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.3 no.3
• /
• pp.309-330
• /
• 2009

In this paper, we introduce the architecture of Genetic Algorithm(GA) based Feed-forward Polynomial Neural Networks(PNNs) and discuss a comprehensive design methodology. A conventional PNN consists of Polynomial Neurons, or nodes, located in several layers through a network growth process. In order to generate structurally optimized PNNs, a GA-based design procedure for each layer of the PNN leads to the selection of preferred nodes(PNs) with optimal parameters available within the PNN. To evaluate the performance of the GA-based PNN, experiments are done on a model by applying Medical Imaging System(MIS) data to a multi-variable software process. A comparative analysis shows that the proposed GA-based PNN is modeled with higher accuracy and more superb predictive capability than previously presented intelligent models.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.10 s.340
• /
• pp.9-18
• /
• 2005

Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.7
• /
• pp.588-591
• /
• 1995

Single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were grown by chemical vapor transport technique. Powdered polycrystalline samples of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were also prepared by the direct combination of the elements. The chemical composition of these single crystals was determined by comparing their lattice parameters with those of the standard polycrystalline samples. The IR transmission range of single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) is slightly narrower than that observed for pure ZnSe. However, these materials still show good transmission in the long-wavelength IR range. The addition of small amounts of CuMSe2 (M=Al, Ga, or In) considerably increases the hardness of ZnSe.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.49-54
• /
• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.8
• /
• pp.438-444
• /
• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Journal of the Korean Vacuum Society
• /
• v.14 no.2
• /
• pp.84-90
• /
• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

• Journal of KSNVE
• /
• v.11 no.1
• /
• pp.147-155
• /
• 2001

This paper is concerned with the real-time automatic tuning of the multi-input multi-output positive position feedback controllers for smart structures by the genetic algorithms. The genetic algorithms have proven its effectiveness in searching optimal design parameters without falling into local minimums thus rendering globally optimal solutions. The previous real-time algorithm that tunes a single control parameter is extended to tune more parameters of the MIMO PPF controller. We employ the MIMO PPF controller since it can enhance the damping value of a target mode without affecting other modes if tuned properly. Hence, the traditional positive position feedback controller can be used in adaptive fashion in real time. The final form of the MIMO PPF controller results in the centralized control, thus it involves many parameters. The bounds of the control Parameters are estimated from the theoretical model to guarantee the stability. As in the previous research, the digital MIMO PPF control law is downloaded to the DSP chip and a main program, which runs genetic algorithms in real time, updates the parameters of the controller in real time. The experimental frequency response results show that the MIMO PPF controller tuned by GA gives better performance than the theoretically designed PPF. The time response also shows that the GA tuned MIMO PPF controller can suppress vibrations very well.