• Proceedings of the KIEE Conference
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• 1997.07b
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• pp.379-382
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• 1997

We present a hybrid self-tuning method using hyper elliptic Gaussian membership function. The proposed method applies a GA to identify the structure and the parameters of a fuzzy inference system. The parameters obtained by a GA, however, are near optimal solutions. So we solve this problem through a backpropagation-type gradient method. It is called GA hybrid self-tuning method in this paper. We provide a numerical example to evaluate the advantage and effectiveness of the proposed approach and compare with the conventional method.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.386-391
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• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• Journal of Intelligence and Information Systems
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• v.13 no.3
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• pp.63-82
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• 2007

In this paper, we propose an adaptive hybrid genetic algorithm (ahGA) approach for effectively solving multistage-based scheduling problems in flexible manufacturing system (FMS) environment. The proposed ahGA uses a neighborhood search technique for local search and an adaptive scheme for regulation of GA parameters in order to improve the solution of FMS scheduling problem and to enhance the performance of genetic search process, respectively. In numerical experiment, we present two types of multistage-based scheduling problems to compare the performances of the proposed ahGA with conventional competing algorithms. Experimental results show that the proposed ahGA outperforms the conventional algorithms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Architectural research
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• v.11 no.2
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• pp.19-26
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• 2009

The effect of rebirthing technique on the genetic algorithm (GA)-based size optimization is investigated. The GA mimics the principles of nature and it can gradually improve structural design through biological operations such as fitness, selection, crossover and mutation. However, premature optimum has been often detected in the generic GA with continuous design variable. Since then, the so-called rebirthing technique has been proposed to avoid this problem. However, the performance of the rebirthing technique has not been reported. Therefore, the size optimizations of spatial structures are tackled to investigate the performance of the rebirthing technique on the generic GA. From numerical results, it is well proved that the rebirthing technique is very effective to produce the optimum values regardless of the values of parameters used in the GA operations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.354-358
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• 2004

In this thesis, an analytical model for Ⅰ-Ⅴ characteristics of an n-AlGaAs/GaAs Delta doped HEMT is proposed. 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. Parameters, e.g., the saturation velocity, 2-dimensional electron gas concentration, thickness of the doped and undoped layer(AlGaAs, GaAs, spacer etc.,) are in good agreement with the independent calculations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.316-319
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• 2000

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.1952-1954
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• 2001

In this paper, we propose the neuro-fuzzy modeling method using VmGA (Virus messy Genetic Algorithm) for the complex nonlinear system. VmGA has more effective and adaptive structure than sGA. in this paper, we suggest a new coding method for applying the model's input and output data to the optimal number of rules in fuzzy models and the structure and parameter identification of membership functions simultaneously. The proposed method realizes the optimal fuzzy inference system using the learning ability of neural network. For fine-tune of parameters identified by VmGA, back- propagation algorithm is used for optimizing the parameter of fuzzy set. The proposed fuzzy modeling method is applied to a nonlinear system to prove the superiority of the proposed approach through comparing with ANFIS.