RF Magnetron Sputtering법에 의한 FED용 $ZnGa_2O_4$형광체의 박막제조 및 특성분석

Fabrication and Properties Of $ZnGa_2O_4$phosphors thin film for FED(Field Emission Display)

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.