• Title/Summary/Keyword: Front Gate

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Design of Broad Band RF Components for Partial Discharge Monitoring System (부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구)

  • Lee, Je-Kwang;Ko, Jae-Hyeong;Kim, Koon-Tae;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

A Study on the Behavior of Bubbles Trapped in the In-Mold Coating Process

  • NguyenThi, Phuong;Kwon, Arim;Yoo, Yeong-Eun;Yoon, Jae Sung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.6
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    • pp.998-1002
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    • 2012
  • This paper investigates the behavior of bubbles trapped in the in-mold coating (IMC) process. Silicon oil with different viscosity, 100, 150, 200, 300 and 400cps, was selected instead of the coating materials. To observe the flow front inside, a special mold was designed, where front plate was made of transparent material (acrylate). The overall size of front plate was $150mm{\times}120mm$. Mold gate location can be changed from up to down. Four heaters were used to investigate the effectiveness of temperature. The results show that silicon viscosity, mold gate location and mold temperature play an important role on the appearance of bubbles trapped in IMC process.

An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

  • Lee, Jae Bin;Suh, Chung Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.4
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    • pp.473-481
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    • 2012
  • For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

Subthreshold Current Model of FinFET Using Three Dimensional Poisson's Equation

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.7 no.1
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    • pp.57-61
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    • 2009
  • This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

Physical Environment Changes in the Keum River Estuary Due to Dike Gate Operation: III. Tidal Modulation of Low-salinity Water (하구언 수문 작동으로 인한 금강 하구역의 물리적 환경변화: III. 저염수의 조석동조)

  • Choi, Hyun-Yong;Kwon, Hyo-Keun;Lee, Sang-Ho
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.6 no.3
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    • pp.115-125
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    • 2001
  • To examine the movement of the freshwater discharged artificially into the estuary during ebbing period in the Keum River dike we observed surface salinity variations in three stations along the estuary channel in May 1998 and July 1997 and surface temperature and salinity along the ferry-route between Kunsan and Changhang during eighteen days in July 1999. Based upon the typical features of observed salinity variation, we analyzed the excursion and decay processes of the discharged water. When freshwater is discharged, the low-salinity water forms strong salinity front over the entire estuary width, which basically moves forth and back by tidal modulation along the channel, producing the sudden change of surface salinity with the front passage. Salinity distribution along the channel, which is deduced from time variation of mean salinity over the estuary width, after one tidal period from gate operation suggests that diluted low-salinity water is trapped to the front and surface salinity increases gradually toward the upstream region. This frontal distribution of salinity is interpreted to be produced by the sudden gate operation supplying and stopping of freshwater within about two hours. Daily repeat of freshwater discharge produces separation (double front) or merge between decaying and new-generated fronts depending on dike-gate opening time, and the front decays with salinity increasing if the freshwater supply is stopped more than two days. In addition, the observed fluctuations and deviations in surface salinity variation is explained in terms of the differences of fronts intensity, their transition time and temporal salinity front running along the channel, which can be generated due to artificial gate-operation for the discharging time and water volume in the estuary dike.

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Design of Optical Receiver Using Independent-Gate-Mode Double-Gate MOSFETs (Independent-Gate-Mode Double-Gate MOSFET을 이용한 Optical Receiver 설계)

  • Kim, Yu-Jin;Jeong, Na-Rae;Park, Sung-Min;Shin, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.8
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    • pp.13-22
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    • 2010
  • Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET overcomes the limitation of bulk-MOSFET's channel controllability and enables to control the front and back-gate voltages independently. Therefore, circuit designs utilizing the IGM-DG MOSFETs provide the advantage of setting 4-terminal freely, hence achieving not only the performance improvement but also the larger scale integration. This paper presents a 15Gb/s optical receiver with a 1.0V power supply voltage, which consists of a transimpedance amplifier (TIA), a feedforward limiting amplifier (LA), and an output buffer. HSPICE simulations were conducted to confirm the circuit performance, and also to verify the circuit stability issues which may occur from the variations of process and supply voltage.

The Spatial Organization of Gyeongbok Palace and The Six Ministries A venue in the Early Joseon Dynasty - The Ceremony at the Main Gate and its Meaning - (조선초기 경복궁의 공간구조성과 6조대로 - 광화문 앞의 행사와 그 의미 -)

  • Kim, Dong-Uk
    • Journal of architectural history
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    • v.17 no.4
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    • pp.25-42
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    • 2008
  • The Gyeongbok Palace was completed during the reign of King Taejo and King Sejong in the early Joseon Dynasty. The most remarkable spacious feature of the palace is that it has an inner palace wall without an outer palace wall. The absence of the outer palace wall had its origin in the palace of the late Goryeo Dynasty which did not provide the outer palace wall. Gwanghwamoon was the main gate of the palace, and the office buildings of the Six Ministries were arranged on the right side in front of the main gate. A wide road called Six Ministries Avenue was made between the builidings. The avenue was completed during the reign of the third king of Joseon, Taejong, and it was assumed that this arrangement was influenced by the government office arrangements of Nanjing, the early capital city of the Ming Dynasty. Gwanghwamoon held national rituals as well as the civic and military state examinations nations in front of the gate. The avenue was decorated with flowers and silks when kings and the royal families, or Chinese envoys enter the gate, and the civilians watched the parade, Because there was no outer palace wall, all the events held at Gwanghwamoon and the Six Ministries Avenue ware opened to the public, it was the unique feature of Gyeongbok Palace that the palaces of Goryeo dynasty and China did not have.

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Simulation of Turbid Water in the Stratified Daecheong Reservoir during Gate Operation (댐 배수조작에 따른 저수지내 탁수변화 모의 - 대청댐을 대상으로 -)

  • Lee, Jae-Yil;Seo, Se-Deok;Lee, Gyu-Sung;Ha, Sung-Ryong
    • Journal of Environmental Impact Assessment
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    • v.18 no.6
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    • pp.377-386
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    • 2009
  • Due to severe flooding, the long-term residence of turbidity flows within the stratified Daecheong Reservoir have lengthened. A long-term residence of turbidity flows within the stratified Daecheong Reservoir after floods has been major environmental issue. The objective of this study was to assess the impact to water supply from the hydrodynamics and turbidity outflow. Two gate operation scenarios were investigated. Scenario A refers to gate operations according to rainfall events, and scenario B refers to gate operations according to inflow. From the results of secenario A, the SS concentrations decreased from 0.44mg/l to 0.54mg/l at the front of the dam, whereas SS concentrations increased from 0.24mg/l to 1.24mg/l at the intake points at Munhi and Daejeon. From the results of scenario B, the SS concentrations decreased from 0.61mg/l to 0.83mg/l at the front of Dam; howeve, SS concentrations also decreased from 0.16mg/l to 0.48mg/l at the intake points at Munhi and Daejeon. It seems that it may be more efficient to control turbidity by creating additional outflows of generated discharge after intensive rainfalls than not.

Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs

  • Avci, Uygar;Kumar, Arvind;Tiwari, Sandip
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.18-26
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    • 2004
  • Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.

A Basic Study for the Restoration of Noryang Temporary Palace (노량행궁의 복원을 위한 기초연구)

  • Koo, Uk-Hee
    • Journal of the Architectural Institute of Korea Planning & Design
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    • v.34 no.5
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    • pp.109-118
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    • 2018
  • Noryang Temporary Palace was a place where king Jeongjo (1752-1800) would have lunch after crossing the Temporary Palace River on his way to Hwaseong Temporary Palace to worship at Hyeonryungwon, the tomb of his father, Sadoseja. The government offices in charge of ship bridge construction 'Jugyosa' and 'Byeoljangso' were located in the Temporary Palace. The central buildings of the Haenggung Palace, which ranged up to Yongyangbongjeojeong, were arranged to observe both 'Jugyosa' and 'Byeoljangso' from the Temporary Palace by lifting the ground from Sammun Gate to Yongyangbongjeojeong. Yongyangbongjeojeong, the center of Noryang Temporary Palace, features the style of royal palace architecture and functions of housing architecture. The 'Jugyosa' and 'Byeoljangso' buildings had eight quarters. According to the records, in addition, 15 wood sheds, 5 rice hubs, 3 barns, 1 side gate quarter, 1 front gate, 70 separate sheds, 2 suragan temporary buildings, oesammun gate and hongsalmun gate were found. Such architectural layout is matched with the Temporary Palace Jugyohwaneodo Painting.