• 제목/요약/키워드: Front Gate

검색결과 143건 처리시간 0.027초

부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구 (Design of Broad Band RF Components for Partial Discharge Monitoring System)

  • 이제광;고재형;김군태;김형석
    • 전기학회논문지
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    • 제60권12호
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

A Study on the Behavior of Bubbles Trapped in the In-Mold Coating Process

  • NguyenThi, Phuong;Kwon, Arim;Yoo, Yeong-Eun;Yoon, Jae Sung
    • 한국생산제조학회지
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    • 제21권6호
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    • pp.998-1002
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    • 2012
  • This paper investigates the behavior of bubbles trapped in the in-mold coating (IMC) process. Silicon oil with different viscosity, 100, 150, 200, 300 and 400cps, was selected instead of the coating materials. To observe the flow front inside, a special mold was designed, where front plate was made of transparent material (acrylate). The overall size of front plate was $150mm{\times}120mm$. Mold gate location can be changed from up to down. Four heaters were used to investigate the effectiveness of temperature. The results show that silicon viscosity, mold gate location and mold temperature play an important role on the appearance of bubbles trapped in IMC process.

An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

  • Lee, Jae Bin;Suh, Chung Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.473-481
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    • 2012
  • For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

Subthreshold Current Model of FinFET Using Three Dimensional Poisson's Equation

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제7권1호
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    • pp.57-61
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    • 2009
  • This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

하구언 수문 작동으로 인한 금강 하구역의 물리적 환경변화: III. 저염수의 조석동조 (Physical Environment Changes in the Keum River Estuary Due to Dike Gate Operation: III. Tidal Modulation of Low-salinity Water)

  • 최현용;권효근;이상호
    • 한국해양학회지:바다
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    • 제6권3호
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    • pp.115-125
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    • 2001
  • 금강하구언에서 낙조동안 인위적으로 방류된 담수의 하구 내 거동을 파악하고자 1997년 5월과 1998년 7월에 각각 수로방향으로 설정된 3개 지점에서 표층 염분변화를 관측하였으며, 1999년 7월에는 군산-장항간 도선항로를 따라 18일간 표층염분과 수온을 관측하였다. 관측된 염분변화의 특징으로부터 방류된 담수가 하구 내에서 거동${\cdot}$소멸하는 과정을 분석하였다. 담수가 방류되면 저염수는 하구 폭 전반에 걸친 강한 염분전선을 형성하며 담수거동은 기본적으로 조석운동에 동조되어 수로를 따라 왕래하고, 이 전선의 통과로 염분은 급격한 변화를 보인다. 수문개폐로부터 한 조석주기 이후의 하구 폭 평균염분의 시간적 변화로부터 해석된 수로방향의 공간적 분포는 전선역에 담수희석수가 응축되며 표층염분이 상류쪽으로 갈수록 점진적으로 증가하는 것으로 제시되었다. 이러한 염분의 전선역 분포는 두 시간정도의 하구언 수문 개방에 의한 급작스런 담수공급과 중단에 의해 발생한 것으로 해석되었다. 매일 담수방류의 반복은 수문 개방시기에 의해 이전의전선과 새로운 전선의 분리(이중전선) 혹은 병합을 만들고, 담수공급이 2일 이상 중단되면 염분이 증가되며 전선이 소멸한다. 또한, 표층염분 변화에 나타나는 변동과 변이는 하구언에서 인위적으로 행해지는 담수 방류량 차이에 의해 발생하는 염분전선의 세기와 통과시기의 공간적 차이, 그리고 일시적인 하구수로 방향을 따른 염분전선 등에 의한 것으로 해석되었다.

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Independent-Gate-Mode Double-Gate MOSFET을 이용한 Optical Receiver 설계 (Design of Optical Receiver Using Independent-Gate-Mode Double-Gate MOSFETs)

  • 김유진;정나래;박성민;신형순
    • 대한전자공학회논문지SD
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    • 제47권8호
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    • pp.13-22
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    • 2010
  • Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET은 기존의 bulk-MOSFET에 비해 향상된 채널 제어능력을 가지며, front-게이트와 back-게이트를 서로 다른 전압으로 구동가능하다는 이점을 가진다. 따라서, 이를 이용한 회로설계는 4-terminal의 자유도를 이용함으로써 회로성능의 향상 뿐 아니라 집적도 향상을 기대할 수 있다. 본 논문에서는 IGM-DG MOSFET의 장점을 이용하여 TIA, feedforward LA, 및 OB로 구성된 15Gb/s 광수신기를 설계하고, HSPICE 시뮬레이션을 통한 회로성능 검증 및 외부환경과 소자의 특성변화에 따른 안정성을 검증하였다.

조선초기 경복궁의 공간구조성과 6조대로 - 광화문 앞의 행사와 그 의미 - (The Spatial Organization of Gyeongbok Palace and The Six Ministries A venue in the Early Joseon Dynasty - The Ceremony at the Main Gate and its Meaning -)

  • 김동욱
    • 건축역사연구
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    • 제17권4호
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    • pp.25-42
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    • 2008
  • The Gyeongbok Palace was completed during the reign of King Taejo and King Sejong in the early Joseon Dynasty. The most remarkable spacious feature of the palace is that it has an inner palace wall without an outer palace wall. The absence of the outer palace wall had its origin in the palace of the late Goryeo Dynasty which did not provide the outer palace wall. Gwanghwamoon was the main gate of the palace, and the office buildings of the Six Ministries were arranged on the right side in front of the main gate. A wide road called Six Ministries Avenue was made between the builidings. The avenue was completed during the reign of the third king of Joseon, Taejong, and it was assumed that this arrangement was influenced by the government office arrangements of Nanjing, the early capital city of the Ming Dynasty. Gwanghwamoon held national rituals as well as the civic and military state examinations nations in front of the gate. The avenue was decorated with flowers and silks when kings and the royal families, or Chinese envoys enter the gate, and the civilians watched the parade, Because there was no outer palace wall, all the events held at Gwanghwamoon and the Six Ministries Avenue ware opened to the public, it was the unique feature of Gyeongbok Palace that the palaces of Goryeo dynasty and China did not have.

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댐 배수조작에 따른 저수지내 탁수변화 모의 - 대청댐을 대상으로 - (Simulation of Turbid Water in the Stratified Daecheong Reservoir during Gate Operation)

  • 이재일;서세덕;이규성;하성룡
    • 환경영향평가
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    • 제18권6호
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    • pp.377-386
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    • 2009
  • Due to severe flooding, the long-term residence of turbidity flows within the stratified Daecheong Reservoir have lengthened. A long-term residence of turbidity flows within the stratified Daecheong Reservoir after floods has been major environmental issue. The objective of this study was to assess the impact to water supply from the hydrodynamics and turbidity outflow. Two gate operation scenarios were investigated. Scenario A refers to gate operations according to rainfall events, and scenario B refers to gate operations according to inflow. From the results of secenario A, the SS concentrations decreased from 0.44mg/l to 0.54mg/l at the front of the dam, whereas SS concentrations increased from 0.24mg/l to 1.24mg/l at the intake points at Munhi and Daejeon. From the results of scenario B, the SS concentrations decreased from 0.61mg/l to 0.83mg/l at the front of Dam; howeve, SS concentrations also decreased from 0.16mg/l to 0.48mg/l at the intake points at Munhi and Daejeon. It seems that it may be more efficient to control turbidity by creating additional outflows of generated discharge after intensive rainfalls than not.

Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs

  • Avci, Uygar;Kumar, Arvind;Tiwari, Sandip
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권1호
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    • pp.18-26
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    • 2004
  • Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.

노량행궁의 복원을 위한 기초연구 (A Basic Study for the Restoration of Noryang Temporary Palace)

  • 구욱희
    • 대한건축학회논문집:계획계
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    • 제34권5호
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    • pp.109-118
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    • 2018
  • Noryang Temporary Palace was a place where king Jeongjo (1752-1800) would have lunch after crossing the Temporary Palace River on his way to Hwaseong Temporary Palace to worship at Hyeonryungwon, the tomb of his father, Sadoseja. The government offices in charge of ship bridge construction 'Jugyosa' and 'Byeoljangso' were located in the Temporary Palace. The central buildings of the Haenggung Palace, which ranged up to Yongyangbongjeojeong, were arranged to observe both 'Jugyosa' and 'Byeoljangso' from the Temporary Palace by lifting the ground from Sammun Gate to Yongyangbongjeojeong. Yongyangbongjeojeong, the center of Noryang Temporary Palace, features the style of royal palace architecture and functions of housing architecture. The 'Jugyosa' and 'Byeoljangso' buildings had eight quarters. According to the records, in addition, 15 wood sheds, 5 rice hubs, 3 barns, 1 side gate quarter, 1 front gate, 70 separate sheds, 2 suragan temporary buildings, oesammun gate and hongsalmun gate were found. Such architectural layout is matched with the Temporary Palace Jugyohwaneodo Painting.